1N4446
1N4446, Rev. A
1N4446
Small Signal Diode
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
DO-35
Color Band Denotes Cathode
2003 Fairchild Semiconductor Corporation
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage 100
V
I
F(AV)
Average Rectified Forward Current
200
mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
A
T
stg
Storage Temperature Range
-65 to +200
C
T
J
Operating Junction Temperature
175
C
Symbol
Parameter
Value
Units
P
D
Power
Dissipation
500
mW
R
JA
Thermal Resistance, Junction to Ambient
300
C/W
Symbol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown Voltage
I
R
= 100
A
100 V
V
F
Forward
Voltage
I
F
= 20 mA
1.0
V
I
R
Reverse
Current
V
R
= 20 V
V
R
= 20 V, T
A
= 150
C
25
50
nA
A
C
T
Total
Capacitance
V
R
= 0, f
= 1.0 MHz
4
pF
t
rr
Reverse Recovery Time
I
F
= 10 mA, V
R
= 6 V,
R
L
= 100
, I
rr
= 1.0 mA
4 ns
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Definition
Advance Information
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This datasheet contains the design specifications for
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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