1N4454
1N4454
DO-35
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
W
IV
Working Inverse Voltage
50
V
I
O
Average Rectified Current
200
mA
I
F
DC Forward Current
400
mA
i
f
Recurrent Peak Forward Current
600
mA
i
f(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
4.0
A
A
T
stg
Storage Temperature Range
-65 to +200
C
T
J
Operating Junction Temperature
175
C
Symbol
Characteristic
Max
Units
1N4454
P
D
Total Device Dissipation
Derate above 25
C
500
3.33
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
300
C/W
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
1N4454
Electrical Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
B
V
Breakdown Voltage
I
R
= 5.0
A
75
V
I
R
Reverse Current
V
R
= 50 V
V
R
= 50 V, T
A
= 150
C
100
100
nA
A
V
F
Forward Voltage
I
F
= 250
A
I
F
= 1.0 mA
I
F
= 2.0 mA
I
F
= 10 mA
505
550
610
575
650
710
1.0
mV
mV
mV
V
C
O
Diode Capacitance
V
R
= 0, f
= 1.0 MHz
4.0
pF
T
RR
Reverse Recovery Time
I
F
= 10 mA, V
R
= 1.0 V,
I
rr
= 1.0 mA, R
L
= 100
4.0
nS
High Conductance Ultra Fast Diode
(continued)
PDF 
ZIP