HGT1S20N60A4S
9A
March 2006
Data Sheet
600V, SMPS Series N-Channel IGBTs
The HGT1S20N60A4S
9A
is MOS gated high voltage switching
devices combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
o
C and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49339.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S20N60A4S
9A
TO-263AB
20N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
>100kHz Operation at 390V, 20A
200kHz Operation at 390V, 12A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T
J
= 125
o
C
Low Conduction Loss
Temperature Compensating SABERTM Model
www.intersil.com
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
C
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S
9A
Rev. A
HGT1S20N60A4S
9A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGT1S20N60A4S
9A
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
70
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
40
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
280
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
100A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
290
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.32
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
o
C
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
260
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= 600V
T
J
= 25
o
C
-
-
250
A
T
J
= 125
o
C
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 20A,
T
J
= 25
o
C
-
1.8
2.7
V
V
GE
= 15V
T
J
= 125
o
C
-
1.6
2.0
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= 600V
4.5
5.5
7.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 3
,
V
GE
= 15V
L = 100
H, V
CE
= 600V
100
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 20A, V
CE
= 300V
-
8.6
-
V
On-State Gate Charge
Q
g(ON)
I
C
= 20A,
V
GE
= 15V
-
142
162
nC
V
CE
= 300V
V
GE
= 20V
-
182
210
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
-
15
-
ns
Current Rise Time
t
rI
I
CE
= 20A
V
CE
= 390V
-
12
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
V
GE
=15V
-
73
-
ns
Current Fall Time
t
fI
R
G
= 3
L = 500
H
-
32
-
ns
Turn-On Energy (Note 3)
E
ON1
Test Circuit (Figure 20)
-
105
-
J
Turn-On Energy (Note 3)
E
ON2
-
280
350
J
Turn-Off Energy (Note 2)
E
OFF
-
150
200
J
2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S
9A
Rev. A
20
0
80
40
60
25
100
300
500
HGT1S20N60A4S
9A
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 125
o
C
-
15
21
ns
Current Rise Time
t
rI
I
CE
= 20A
V
CE
= 390V
-
13
18
ns
Current Turn-Off Delay Time
t
d(OFF)I
V
GE
= 15V
-
105
135
ns
Current Fall Time
t
fI
R
G
= 3
L = 500
H
-
55
73
ns
Turn-On Energy (Note 3)
E
ON1
Test Circuit (Figure 20)
-
115
-
J
Turn-On Energy (Note 3)
E
ON2
-
510
600
J
Turn-Off Energy (Note 2)
E
OFF
-
330
500
J
Thermal Resistance Junction To Case
R
JC
-
-
0.43
o
C/W
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
Typical Performance Curves
Unless Otherwise Specified
I
CE
, CO
L
L
ECT
O
R T
O
EM
I
T
T
E
R CURRENT
(
A)
120
100
80
60
40
20
0
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 100
H
0
100
200
300
400
500
600
700
V
GE
= 15V
DIE CAPABILITY
PACKAGE LIMIT
I
CE
, DC CO
L
L
ECT
O
R C
URRENT
(
A)
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TEMPERATURE
T
J
= 125
o
C, R
G
= 3
, L = 500
H, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.43
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
C
75
o
C
V
GE
15V
t
SC
, SHO
R
T
CIR
CUIT
WIT
H
ST
AND T
I
M
E
(
s)
14
I
SC
, PEAK SHO
R
T
CIR
CUIT
CURRENT
(
A)
V
CE
= 390V, R
G
= 3
, T
J
= 125
o
C
I
SC
t
SC
f
MA
X
,
OPERA
T
ING
F
R
EQUENCY (
k
Hz)
12
10
350
8
300
6
250
4
2
150
0
100
10
20
30
40
50
10
11
12
13
14
15
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
EMITTER CURRENT
2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S
9A
Rev. A
5
40
100
450
200
400
0
20
40
80
60
100
1000
600
800
400
1200
200
1400
16
18
20
HGT1S20N60A4S
9A
Typical Performance Curves
Unless Otherwise Specified (Continued)
100
I
CE
, COL
L
E
CT
OR T
O
EM
I
T
T
E
R CURRENT
(
A
)
DUTY CYCLE < 0.5%, V
GE
= 12V
PULSE DURATION = 250
s
T
J
= 125
o
C
T
J
= 150
o
C
T
J
= 25
o
C
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
,
COL
L
ECT
O
R T
O
E
M
IT
T
E
R C
URRENT
(
A
)
80
60
40
20
0
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
s
T
J
= 125
o
C
T
J
= 150
o
C
T
J
= 25
o
C
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
R
G
= 3
, L = 500
H, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
T
2
, V
GE
= 12V, V
GE
= 15V
J
= 5
o
C
800
700
R
G
= 3
, L = 500
H, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
E
OF
F
,
T
URN-
OF
F
E
N
ERG
Y
L
O
S
S
(
J)
E
ON
2
,
T
URN-
ON ENERG
Y
L
O
SS (
J)
600
500
400
300
200
100
0
0
5
10
15
20
25
30
35
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
5
10
15
20
25
30
35
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
36
22
R
G
= 3
H, V
CE
= 390V
, L = 500
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 3
, L = 500
H, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
t
d(
O
N
)
I
,
T
URN-
O
N
DEL
A
Y T
I
M
E
(
n
s
)
32
28
24
20
16
t
rI
,
R
I
SE T
I
M
E
(
n
s
)
12
10
8
4
8
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
EMITTER CURRENT
2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S
9A
Rev. A
14
12
80
120
100
110
90
80
120
160
200
240
40
HGT1S20N60A4S
9A
Typical Performance Curves
Unless Otherwise Specified (Continued)
80
72
R
G
= 3
, L = 500
H, V
CE
= 390V
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
GE
= 15
V
GE
= 12V, V
V, T
J
= 25
o
C
R
G
= 3
, L = 500
H, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 12V OR 15V
V OR 15
T
J
= 25
o
C, V
GE
= 12
V
t
d(
O
FF)
I
, T
URN-
O
F
F
DEL
A
Y T
I
M
E
(
n
s
)
64
t
fI
,
F
A
LL T
I
ME
(
n
s
)
56
48
40
32
70
24
60
5
10
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
16
40
5
10
15
20
25
30
35
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
EMITTER CURRENT
CURRENT
E
TO
T
A
L
,
T
O
T
A
L SWI
T
CHI
NG
ENERG
Y LO
SS (
m
J
)
I
CE
, COL
L
ECT
O
R T
O
EM
IT
T
E
R
CURRENT
(
A)
16
I
G(REF)
= 1mA, R
L
= 15
, T
J
= 25
o
C
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
DUT
Y CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250
s
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= -55
o
C
V
GE
, G
A
T
E
T
O
E
M
IT
T
E
R
V
OL
T
A
GE
(
V
)
14
12
10
8
6
4
2
0
0
6
7
8
9
10
11
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
12
0
20
40
60
80
100
120
140
160
Q
G
, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
E
TO
T
A
L
, T
O
T
A
L
S
W
IT
CH
ING E
N
E
R
GY
L
O
S
S
(
m
J
)
10
1
0.1
T
J
o
H, V
CE
=
GE
= 15V
E
= E
ON2
+ E
I
CE
I
CE
I
CE
= 125 C, L = 500
390V, V
TOTAL
OFF
= 10A
= 20A
= 30A
3
10
100
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
R
G
= 3
, L = 500
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 30A
I
CE
= 20A
I
CE
= 10A
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
R
G
, GATE RESISTANCE (
)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
TEMPERATURE
2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S
9A
Rev. A
0
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