2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10
A to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2N3906
PZT3906
MMBT3906
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
40
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
C
B
E
TO-92
B
C
C
SOT-223
E
C
B
E
SOT-23
Mark: 2A
1997 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906
Electrical Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
(except MMPQ3906)
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
Spice Model
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
5.0
V
I
BL
Base Cutoff Current
V
CE
= 30 V, V
BE
= 3.0 V
50
nA
I
CEX
Collector Cutoff Current
V
CE
= 30 V, V
BE
= 3.0 V
50
nA
h
FE
DC Current Gain *
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
60
80
100
60
30
300
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.25
0.4
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.65
0.85
0.95
V
V
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
250
MHz
C
obo
Output Capacitance
V
CB
= 5.0 V, I
E
= 0,
f = 100 kHz
4.5
pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0,
f = 100 kHz
10.0
pF
NF
Noise Figure
(except MMPQ3906)
I
C
= 100
A, V
CE
= 5.0 V,
R
S
=1.0k
, f=10 Hz to 15.7 kHz
4.0
dB
t
d
Delay Time
V
CC
= 3.0 V, V
BE
= 0.5 V,
35
ns
t
r
Rise Time
I
C
= 10 mA, I
B1
= 1.0 mA
35
ns
t
s
Storage Time
V
CC
= 3.0 V, I
C
= 10mA
225
ns
t
f
Fall Time
I
B1
= I
B2
= 1.0 mA
75
ns
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4
Vtf=4 Xtf=6 Rb=10)
PNP General Purpose Amplifier
(continued)
2N3906 / MMBT3906 / PZT3906
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
2N3906
*PZT3906
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
1,000
8.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
125
C/W
Symbol
Characteristic
Max
Units
**MMBT3906
MMPQ3906
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
1,000
8.0
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
357
125
240
C/W
C/W
C/W
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Base Emitter ON Voltage vs
Collector Current
P 66
0.1
1
10
25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BA
S
E
EMIT
TER ON VOL
T
A
GE (V)
C
B
EON
V = 1V
CE
25 C
- 40 C
125 C
Typical Pulsed Current Gain
vs Collector Current
0.1 0.2
0.5
1
2
5
10
20
50 100
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
h
-
T
Y
P
I
CA
L PUL
S
E
D
CURRE
NT GA
I
N
C
FE
125 C
25 C
- 40 C
Vce = 1V
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
**
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Base-Emitter Saturation
Voltage vs Collector Current
P 66
1
10
100
200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE
EM
I
T
T
E
R
VO
L
T
A
G
E
(
V
)
C
B
ESA
T
= 10
25 C
- 40 C
125 C
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
200
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V
-
COLLE
CT
OR
EMI
TTER
VO
L
T
A
GE
(V)
C
CE
S
A
T
25 C
- 40 C
125 C
= 10
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Collector-Cutoff Current
vs. Ambient Temperature
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
-
CO
LL
E
C
T
O
R
CU
RR
EN
T
(
n
A
)
A
CB
O
V = 25V
CB
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
0.1
1
10
0
2
4
6
8
10
REVERSE BIAS VOLTAGE (V)
CA
P
A
C
I
T
A
NC
E (
p
F
)
C obo
C ibo
Noise Figure vs Frequency
0.1
1
10
100
0
1
2
3
4
5
6
f - FREQUENCY (kHz)
N
F
-
NO
I
S
E
F
I
G
U
RE
(
d
B)
I = 100
A, R = 200
C
V = 5.0V
CE
S
I = 100
A, R = 2.0 k
C
S
I = 1.0 mA, R = 200
C
S
k
Noise Figure vs Source Resistance
0.1
1
10
100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
N
F
-
NO
I
S
E
F
I
G
U
RE
(
d
B)
I = 100
A
C
V = 5.0V
f = 1.0 kHz
CE
I = 1.0 mA
C
S
Switching Times
vs Collector Current
1
10
100
1
10
100
500
I - COLLECTOR CURRENT (mA)
TI
ME
(
n
S)
I = I =
t r
t
s
B1
C
B2
I
c
10
t f
t d
Turn On and Turn Off Times
vs Collector Current
1
10
100
1
10
100
500
I - COLLECTOR CURRENT (mA)
TI
M
E
(n
S)
I = I =
t
off
B1
C
B2
I
c
10
t
on
V = 0.5V
BE(OFF)
t
I =
on
t
off
B1
I
c
10
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
PO
W
E
R
D
I
SSI
P
A
TI
O
N
(
W
)
D
o
SOT-223
SOT-23
TO-92
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