NPN General Purpose Amplifier
This device is designed for use as a medium power amplifier and
switch requiring collector currents up to 500 mA. Sourced from
Process 19. See PN2222A for characteristics.
MMBT4401
2N4401
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
1.0
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
2N4401
*MMBT4401
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
C/W
2N4401 / MMBT4401
C
B
E
TO-92
C
B
E
SOT-23
Mark: 2X
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 0.1 mA, I
E
= 0
60
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 0.1 mA, I
C
= 0
6.0
V
I
BL
Base Cutoff Current
V
CE
= 35 V, V
EB
= 0.4 V
0.1
A
I
CEX
Collector Cutoff Current
V
CE
= 35 V, V
EB
= 0.4 V
0.1
A
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 150 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 2.0 V
20
40
80
100
40
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.4
0.75
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.75
0.95
1.2
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 20 mA, V
CE
= 10 V,
f = 100 MHz
250
MHz
C
cb
Collector-Base Capacitance
V
CB
= 5.0 V, I
E
= 0,
f = 140 kHz
6.5
pF
C
eb
Emitter-Base Capacitance
V
BE
= 0.5 V, I
C
= 0,
f = 140 kHz
30
pF
h
ie
Input Impedance
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
1.0
15
k
h
re
Voltage Feedback Ratio
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
0.1
8.0
x 10
-4
h
fe
Small-Signal Current Gain
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
40
500
h
oe
Output Admittance
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
1.0
30
mhos
SWITCHING CHARACTERISTICS
t
d
Delay Time
V
CC
= 30 V, V
EB
= 0.2 V,
15
ns
t
r
Rise Time
I
C
= 150 mA, I
B1
= 15 mA
20
ns
t
s
Storage Time
V
CC
= 30 V, I
C
= 150 mA
225
ns
t
f
Fall Time
I
B1
= I
B2
= 15 mA
30
ns
*
Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%
Symbol
Parameter
Test Conditions
Min
Max
Units
NPN General Purpose Amplifier
(continued)
2N4401 / MMBT4401
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