2N5210
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1
A to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5210
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
C/W
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
50
V
V
CBO
Collector-Base Voltage
50
V
V
EBO
Emitter-Base Voltage
4.5
V
I
C
Collector Current - Continuous
100
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
2N5210
C
B
E
TO-92
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 1.0 mA, I
B
= 0
50
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 0.1 mA, I
E
= 0
50
V
I
CBO
Collector Cutoff Current
V
CB
= 35 V, I
E
= 0
50
nA
I
EBO
Emitter Cutoff Current
V
EB
= 3.0 V, I
C
= 0
50
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 100
A, V
CE
= 5.0 V
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V*
200
250
250
600
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
0.7
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 1.0 mA, V
CE
= 5.0 V
0.85
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 500
A,V
CE
= 5.0 V,
f= 20 MHz
30
MHz
C
cb
Collector-Base Capacitance
V
CB
= 5.0 V, I
E
= 0, f = 100 kHz
4.0
pF
h
fe
Small-Signal Current Gain
I
C
= 1.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
250
900
NF
Noise Figure
I
C
= 20
A, V
CE
= 5.0 V,
R
S
= 22 k
, f = 10 Hz to 15.7 kHz
I
C
= 20
A, V
CE
= 5.0 V,
R
S
= 10 k
, f = 1.0 kHz
2.0
3.0
dB
dB
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
NPN General Purpose Amplifier
(continued)
2N5210
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