DISCRETE POWER & SIGNAL
TECHNOLOGIES
2N6076
SILICON PNP SMALL SIGNAL TRANSISTOR
BV
CEO
. . . . 25 V (Min)
h
FE
. . . . 100 (Min) @ V
CE
= 10 V, I
C
= 10 mA
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
TEMPERATURES
Storage Temperature
-55 Degrees C to
150 Degrees C
Operating Junction Temperature
150 Degrees C
POWER DISSIPATION (NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C
625 mW
VOLTAGES & CURRENT
V
CEO
Collector to Emitter
25 V
V
CBO
Collector to Base
25 V
V
EBO
Emitter to Base
5 V
I
C
Collector Current
500 mA
1 2 3
B C E
1
2
3
LOGO
XYY
2N
6076
0.175 - 0.185
(4.450 - 4.700)
0.500
(12.70)
MIN
0.175 - 0.185
(4.450 - 4.700)
SEATING
PLANE
0.095 - 0.105
(2.413 - 2.667)
0.045 - 0.055
(1.143- 1.397)
0.016 - 0.021
(0.410- 0.533)
0.135 - 0.145
(3.429 - 3.683)
SYM
CHARACTERISTICS
MIN MAX UNITS
TEST CONDITIONS
B
VCBO
Collector to Base Voltage
25
V
I
C
=
100 uA
B
VCEO
Collector to Emitter Voltage
25
V
I
C
= 10 mA
B
VEBO
Emitter to Base Voltage
5
V
I
E
=
10 uA
I
CBO
Collector Cutoff Current
100
nA
V
CB
= 25 V
10 uA V
CB
= 25 V , T=+100C
I
CES
Collector Cutoff Current
100
nA
V
CE
= 25 V
I
EBO
Emitter Cutoff Current
100
uA
V
EB
= 3.0 V
h
FE
DC Current Gain
100 500
V
CE
= 10 V I
C
= 10 mA
V
CE(
sat
)
Collector-Emitter Saturation Voltage
0.25
V
I
C
= 10mA I
B
= 1.0mA
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.8
V
I
C
= 10mA I
B
= 1.0mA
V
BE
(on)
Base -Emitter On Voltage
0.5
1.2
V
V
CE
= 10 V I
C
= 10mA
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
1998 Fairchild Semiconductor Corporation
2n6076.ppt6894 revA
DISCRETE POWER & SIGNAL
TECHNOLOGIES
NOTES:
1.
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2.
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3.
These ratings are based on a maximum junction temperature of 150 degrees C.
SYM
CHARACTERISTICS
MIN MAX UNITS
TEST CONDITIONS
C
cb
Output Capacitance
1
13
pF
V
CB
= 10 V, f = 1 MHz
hfe
Small Signal Current Gain
100
750
V
CE
= 10 V, I
C
=10 mA, f
=1KHz
ELECTRICAL CHARACTERISTICS Con't (25 Degrees C Ambient Temperature unless otherwise stated)
2N6076
SILICON PNP SMALL SIGNAL TRANSISTOR
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