DESCRIPTION
The 4N39 and 4N40 have a gallium-arsenide infrared
emitting diode optically coupled with a light activated sil-
icon controlled rectifier in a dual in-line package.
PHOTO SCR OPTOCOUPLERS
4N39 4N40
APPLICATIONS
Low power logic circuits
Telecommunications equipment
Portable electronics
Solid state relays
Interfacing coupling systems of different potentials and impedances.
FEATURES
10 A, T
2
L compatible, solid state relay
25 W logic indicator lamp driver
400 V symmetrical transistor coupler
Underwriters Laboratory (UL) recognized
File #E90700
6
1
6
1
6
1
CATHODE
ANODE
1
2
3
ANODE
CATHODE
4
5
6 GATE
N/C
SCHEMATIC
Parameter
Symbol
Device
Value
Units
TOTAL DEVICE
T
STG
All
-55 to +150
C
*Storage Temperature
*Operating Temperature
T
OPR
All
-55 to +100
C
*Lead Solder Temperature
T
SOL
All
260 for 10 sec
C
*Total Device Power Dissipation (-55C to 50 C)
P
D
All
450
mW
Derate above 50C
9.0
mW/C
EMITTER
I
F
All
60
mA
*Continuous Forward Current
*Reverse Voltage
V
R
All
6
V
*Forward Current - Peak (300 s, 2% Duty Cycle)
I
F
(pk)
All
1.0
A
*LED Power Dissipation (-55C to 50 C)
P
D
All
100
mW
Derate above 50C
2.0
mW/C
DETECTOR
*Off-State And Reverse Voltage
4N39
200
V
4N40
400
V
*Peak Reverse Gate Voltage
6
V
*Direct On-State Current
300
mA
*Surge On-State Current (100 s)
10
A
*Peak Gate Current
10
mA
*Detector Power Dissipation (-55C to 50C)
P
D
All
400
mW
Derate above 50C
8.0
mW/C
2001 Fairchild Semiconductor Corporation
DS300381
2/27/01
1 OF 8
www.fairchildsemi.com
Note
* Indicates JEDEC Registered Data
** Typical values at T
A
= 25C
Parameter
Test Conditions
Symbol
Device
Min
Typ**
Max
Unit
EMITTER
Input Forward Voltage
I
F
= 10 mA
V
F
All
1.1
1.5
V
Reverse Leakage Current
V
R
= 3 V
I
R
All
10
A
Capacitance
V
F
= 0 V, f = 1.0 MHz
C
J
All
50
pF
DETECTOR
Peak Off-State Voltage
R
GK
= 10 k
,
T
A
=100 C
V
DM
4N39
200
V
4N40
400
Peak Reverse Voltage
T
A
=100 C
V
RM
4N39
200
V
4N40
400
On-State Voltage
I
T
= 300 mA
V
T
All
1.3
V
Off-State Current
V
DM
= 200 V, T
A
= 100 C,
I
DM
4N39
50
A
I
F
= 0 mA, R
GK
= 10 k
4N40
150
Reverse Current
V
R
= 200 V, T
A
=100 C, I
F
= 0 mA
I
R
4N39
50
A
4N40
150
Holding Current
V
Fx
= 50V, R
GK
= 27 k
I
H
All
1.0
mA
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
= 25C Unless otherwise specified.)
Characteristic
Test Conditions
Symbol
Min
Typ**
Max
Units
*Input-Output Isolation Voltage
( I
I-0
1 A, Vrms, t = 1 min.)
V
ISO
5300
Vac(rms)
*Isolation Resistance
(V
I-O
= 500 VDC)
R
ISO
10
11
!
Isolation Capacitance
(V
I-O
=
,
f = 1 MHz)
C
ISO
0.8
pf
ISOLATION CHARACTERISTICS
Characteristics
Test Conditions
Symbol
Device
Min
Typ**
Max
Units
*Input Current to Trigger
V
AK
= 50 V, R
GK
= 10 k
I
FT
4N39
30
mA
V
AK
= 100 V, R
GK
= 27 k
4N40
14
*Turn-On Time
V
AK
= 50 V, I
F
= 30 mA
t
on
ALL
50
A
R
GK
= 10 k
, RL = 200
Package Capacitance
f = 1 MHz
C
I-O
ALL
2
pF
(input to output)
Input to Output Voltage = 0
Coupled dv/dt, input to output
dV/dt
ALL
500
V/
S
(figure 13)
TRANSFER CHARACTERISTICS
(T
A
= 25C Unless otherwise specified.)
PHOTO SCR OPTOCOUPLERS
4N39 4N40
www.fairchildsemi.com
2 OF 8
2/27/01
DS300381
Note
* Indicates JEDEC Registered Data
** Typical values at T
A
= 25C
50
5
10
1
.5
.1
5
1
10
50 100
200
400
V
AK
- ANODE TO CATHODE VOLTAGE (VOLTS)
Figure 1. Input Current To Trigger vs. Anode-Cathode Voltage
I
FT
- NORMALIZED INPUT CURRENT
T
O
TRIGGER
100
1000
10
1
.01
0
.001
0.5
1.0
2.0
3.0
V
AK
- FORWARD VOLTAGE (VOLTS)
Figure 6. Input Characteristics I
F
vs. V
F
I
F
- FOR
W
ARD CURRENT (MILLIAMPERES)
40
100
4
6
8
20
2
10
1
.2
.1
.6
.8
.4
2
1
4
8
6
10
20
40 60 100
200
400
1000
PULSE WIDTH (MICRO SECONDS)
Figure 4. Input Current To Trigger vs. Pluse Width
I
FT
- NORMALIZED INPUT CURRENT
T
O
TRIGGER
Figure 3. Input Current To Trigger Distribution vs. Temperature
.4
.2
.1
1
.8
.6
6
4
2
12
10
8
-40
-60
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
T
A
- AMBIENT TEMPERATURE (
C)
T
A
- AMBIENT TEMPERATURE (
C)
Figure 2. Input Current To Trigger vs. Temperature
I
FT
-
NORMALIZED INPUT CURRENT
T
O
TRIGGER
.4
.2
.1
1
.8
.6
6
4
2
10
8
I
FT
- NORMALIZED INPUT CURRENT
T
O
TRIGGER
4
6
8
12
2
10
16
14
20
18
24
22
20
10
30
50
40
60
70
80
90
100
I
F
- INPUT CURRENT (MILLIAMPERES)
Figure 5. Turn-On Time vs. Input Current
t
on
-
TURN ON
TIME (MICR
OSECONDS)
R
GK
= 300
1K
R
GK
= 300
1K
NORMALIZED TO
V
AK
= 50V
R
GK
= 10K
T
A
= 25C
NORMALIZED TO
V
AK
= 50V
R
GK
= 10K
T
A
= 25C
V
AK
= 50V
t
on
= t
d
+ I
r
t
r
1
S
NORMALIZED TO
V
AK
= 50V
R
GK
= 10K
T
A
= 25C
NORMALIZED TO
V
AK
= 50V
R
GK
= 10K
T
A
= 25C
10K
27K
56K
10K
27K
56K
1K
10K
27K
56K
R
GK
= 300
90 TH PERCENTILE
10 TH PERCENTILE
10K
56K
R
GK
= 1K
PHOTO SCR OPTOCOUPLERS
4N39 4N40
DS300381
2/27/01
3 OF 8
www.fairchildsemi.com
0
25
50
75
100
Figure 9. Off-State Forward Current vs. Temperature
I
M
- HOLDING CURRENT (MICR
O
AMPERES)
TRANSIENT
THERMAL IMPED
ANCE (
C PER
W
A
TT)
5,000
10,000
500
1000
100
50
10
-20
-40
0
20
40
60
80
100
T
A
- AMBIENT TEMPERATURE (
C)
TIME (SECONDS)
T
A
- AMBIENT TEMPERATURE (
C)
Figure 7. Holding Current vs. Temperature
I
FT
- NORMALIZED INPUT CURRENT
T
O
TRIGGER
I
D
- NORMALIZED FOR
W
ARD CURRENT (OFF ST
A
TE)
5000
10,000
500
1000
100
50
10
5
1
30
100
20
10
60
50
40
90
80
70
0.2
0.4
0.6
08
10
ON-STATE CURRENT (AMPERES)
Figure 10. On-State Current vs. Maximum Allowable Temperature
MAXIMUM ALLO
W
ABLE
TEMPERA
TURE (
C)
Figure 12. On-State Characteristics
0
10
20
30
40
V
T
- ON-STATE VOLTAGE (VOLTS
)
.-2
.01
.06
.08
.01
.04
.6
.4
1
.8
.2
2
I
T
-
ON-ST
A
TE CURRENT (AMPERES)
R
GK
= 300
1K
10K
27K
56K
1K
56K
400V
50V
V
AK
= 50V
NORMALIZED TO
V
AK
+50V
T
A
+25C
.0004 .001 .002 .004
.0001
.0002
.01
.02
.04
1
2
4
10
20
40
100
Figure 8. Maximum Transient Thermal Impedance
40
1000
10
20
100
200
400
600
60
6
4
2
1
25
50
75
100
Figure 11. dv/dt vs. Temperature
T
A
- AMBIENT TEMPERATURE (
C)
dV/dI - CRITICAL RA
TE OF RISE APPLIED FOR
W
ARD
V
O
L
T
A
GE (
V
olt/
sec)
500
1000
100
50
10
5
1.0
.5
ANODE LEAD TEMP
DC CURRENT
AMBIENT TEMP
HALF-SINE
WAVE AVGERAGE
ANODE LEAD TEMP
1/2 SINE WAVE AVERAGE
AMBIENT TEMP
DC CURRENT
10K
27K
R
GK
= 300
JUNCTION TEMPERATURE = 100
C
INCREASES TO FORWARD
BREAKOVER VOLTAGE
JUNCTION TEMPERATURE = 25
C
NOTE: (1) LEAD TEMPERATURE MEASURED AT THE WIDEST PORTION
OF THE SCR ANODE LEAD
(2) AMBIENT TEMPERATURE MEASURED AT A POINT
1/2" FROM THE DEVICE
JUNCTION TO AMBIENT
JUNCTION TO LEAD
www.fairchildsemi.com
4 OF 8
2/27/01
DS300381
PHOTO SCR OPTOCOUPLERS
4N39 4N40
+5V
470
"COIL"
4N40
56K
100
47
47
SC1460
0.1
F
LOAD
"CONTACT"
220 V AC
IN5060 (4)
TYPICAL APPLICATIONS
DS300381
2/27/01
5 OF 8
www.fairchildsemi.com
PHOTO SCR OPTOCOUPLERS
4N39 4N40
Fig. 13 Coupled dv/dt - Test Circuit
tp
+
DUT
-
Vp
H
EXPONENTIAL
OSCILLOSCOPE
10 K
RAMP GEN.
100
+100 V AC
Vp = 800 Volts
tp = .010 Seconds
f = 25 Hertz
T
A
= 25
C
dV / dt
.63 Vp
Vp
10A, T
2
L COMPATIBLE, SOLID
STATE RELAY
Use of the 4N40 for high sensi-
tivity, 5300 V isolation capability,
provides this highly reliable solid
state relay design. This design is
compatible with 74, 74S and 74H
series T
2
L logic systems inputs
and 220V AC loads up to 10A.
LOGIC
+5V
56K
470
4N40
0.1
F
220 V AC
100
INPUT
INDICATER
LAMP
25W, LOGIC INDICATOR LAMP DRIVER
The high surge capability and non-reactive input
characteristics of the 4N40 allow it to directly couple,
without buffers, T
2
L and DTL logic to indicator alarm
devices, without danger of introducing noise and
logic glitches.
OUTPUT
INPUT
4N40
400V SYMMETRICAL TRANSISTOR COUPLER
Use of the high voltage PNP portion of the 4N40 provides a 400V transistor
capable of conducting positive and negative signals with current transfer
ratios of over 1%. This function is useful in remote instrumentation, high volt-
age power supplies and test equipment. Care should be taken not to exceed
the 40mW power dissipation rating when used at high voltages.
PDF 
ZIP