www.fairchildsemi.com

Rev.1.0.5

Features

· Precision Fixed Operating Frequency (100/67/50kHz)
· Low Start-up Current(Typ. 100uA)
· Pulse by Pulse Current Limiting
· Over Current Protection
· Over Voltage Protection (Min. 25V)
· Internal Thermal Shutdown Function
· Under Voltage Lockout
· Internal High Voltage Sense FET
· Auto-Restart Mode

Applications

· SMPS for VCR, SVR, STB, DVD & DVCD
· SMPS for Printer, Facsimile & Scanner
· Adaptor for Camcorder

Description

The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
Included PWM controller integrates the fixed frequency
oscillator, the under voltage lock-out, the leading edge
blanking, the optimized gate turn-on/turn-off driver, the
thermal shutdown protection, the over voltage protection,
and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a PWM controller or
an RCCsolution, a Fairchild Power Switch(FPS) can reduce
the total component count, design size and weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter

Internal Block Diagram

#3 V

32V

2.5R

1mA

0.1V

OVER VOLTAGE S/D

7.5V

27V

Thermal S/D

Power on reset

L.E.B

OSC

Vref

Internal

bias

Good

logic

SFET

#2 DRAIN

#1 GND

#4 FB

(*#3 V

)

(*#4 FB)

(*#1.6.7.8 DRAIN)

(*#2 GND)

*Asterisk - KA5M0365RN, KA5L0365RN

KA5x03xx-SERIES

KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN,

KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R

Fairchild Power Switch(FPS)

TO-220F-4L

1. GND 2. Drain 3. V

4. FB

8-DIP

1.6.7.8 Drain

2. GND

3. V

4. FB 5. NC

KA5X03XX-SERIES

Absolute Maximum Ratings

(Ta=25

C, unless otherwise specified)

Note:
1.

Repetitive rating: Pulse width limited by maximum junction temperature

51mH, starting Tj

H, starting Tj

Characteristic

Symbol

Value

Unit

KA5H0365R, KA5M0365R, KA5L0365R
Maximum Drain Voltage

D,MAX

650

Drain-Gate Voltage (R

=1M

)

DGR

650

Gate-Source (GND) Voltage

Drain Current Pulsed

(1)

12.0

Continuous Drain Current (T

=25

3.0

Continuous Drain Current (T

=100

2.4

Single Pulsed Avalanche Energy

(2)

358

Maximum Supply Voltage

CC,MAX

Analog Input Voltage Range

-0.3 to V

Total Power Dissipation

Derating

0.6

Operating Junction Temperature.

+160

Operating Ambient Temperature.

-25 to +85

Storage Temperature Range.

STG

-55 to +150

KA5H0380R, KA5M0380R, KA5L0380R
Maximum Drain Voltage

D,MAX

800

Drain-Gate Voltage (R

=1M

)

DGR

800

Gate-Source (GND) Voltage

Drain Current Pulsed

(1)

12.0

Continuous Drain Current (T

=25

3.0

Continuous Drain Current (T

=100

2.1

Single Pulsed Avalanche Energy

(2)

Maximum Supply Voltage

CC,MAX

Analog Input Voltage Range

-0.3 to V

Total Power Dissipation

Derating

0.6

Operating Junction Temperature.

+160

Operating Ambient Temperature.

-25 to +85

Storage Temperature Range.

STG

-55 to +150

KA5X03XX-SERIES

Absolute Maximum Ratings

(Ta=25

C, unless otherwise specified)

Note:
1.

Repetitive rating: Pulse width limited by maximum junction temperature

51mH, starting Tj

H, starting Tj

Characteristic

Symbol

Value

Unit

KA5M0365RN, KA5L0365RN
Maximum Drain Voltage

D,MAX

650

Drain-Gate Voltage (R

=1M

)

DGR

650

Gate-Source (GND) Voltage

Drain Current Pulsed

(1)

12.0

Continuous Drain Current (Ta=25

0.42

Continuous Drain Current (Ta=100

0.28

Single Pulsed Avalanche Energy

(2)

127

Maximum Supply Voltage

CC,MAX

Analog Input Voltage Range

-0.3 to V

Total Power Dissipation

1.56

Derating

0.0125

Operating Junction Temperature.

+160

Operating Ambient Temperature.

-25 to +85

Storage Temperature Range.

STG

-55 to +150

KA5X03XX-SERIES

Electrical Characteristics (SenseFET Part)

(Ta = 25

C unless otherwise specified)

Note:

Pulse test: Pulse width

300

S, duty

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage

DSS

=0V, I

=50

650

Zero Gate Voltage Drain Current

DSS

=Max. Rating, V

=0V

=0.8Max. Rating,

=0V, T

=125

200

Static Drain-Source on Resistance

(Note)

DS(ON)

=10V, I

=0.5A

3.6

4.5

Forward Transconductance

(Note)

gfs

=50V, I

=0.5A

2.0

Input Capacitance

Ciss

=0V, V

=25V,

f=1MHz

720

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn On Delay Time

td(on)

=0.5BV

DSS

, I

=1.0A

(MOSFET switching
time is essentially
independent of
operating temperature)

150

Rise Time

100

Turn Off Delay Time

td(off)

150

Fall Time

Total Gate Charge
(Gate-Source+Gate-Drain)

=10V, I

=1.0A,

=0.5BV

DSS

(MOSFET

switching time is essentially
independent of
operating temperature)

Gate-Source Charge

Qgs

7.3

Gate-Drain (Miller) Charge

Qgd

13.3

KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage

DSS

=0V, I

=50

800

Zero Gate Voltage Drain Current

DSS

=Max. Rating, V

=0V

250

=0.8Max. Rating,

=0V, T

=125

1000

Static Drain-Source on Resistance

(Note)

DS(ON)

=10V, I

=0.5A

4.0

5.0

Forward Transconductance

(Note)

gfs

=50V, I

=0.5A

1.5

2.5

Input Capacitance

Ciss

=0V, V

=25V,

f=1MHz

779

Output Capacitance

Coss

75.6

Reverse Transfer Capacitance

Crss

24.9

Turn On Delay Time

td(on)

=0.5BV

DSS

, I

=1.0A

(MOSFET switching
time is essentially
independent of
operating temperature)

Rise Time

Turn Off Delay Time

td(off)

150

Fall Time

Total Gate Charge
(Gate-Source+Gate-Drain)

=10V, I

=1.0A,

=0.5BV

DSS

(MOSFET

switching time is
essentially independent of
operating temperature)

Gate-Source Charge

Qgs

7.2

Gate-Drain (Miller) Charge

Qgd

12.1

----

KA5X03XX-SERIES

Electrical Characteristics (SenseFET Part)

(Ta = 25

C unless otherwise specified)

Note:

Pulse test: Pulse width

300

S, duty

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

KA5M0365RN, KA5L0365RN
Drain-Source Breakdown Voltage

DSS

=0V, I

=50

650

Zero Gate Voltage Drain Current

DSS

=Max. Rating, V

=0V

=0.8Max. Rating,

=0V, T

=125

200

Static Drain-Source on Resistance

(Note)

DS(ON)

=10V, I

=0.5A

3.6

4.5

Forward Transconductance

(Note)

gfs

=50V, I

=0.5A

2.0

Input Capacitance

Ciss

=0V, V

=25V,

f=1MHz

314.9

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn On Delay Time

td(on)

=0.5BV

DSS

, I

=1.0A

(MOSFET switching
time is essentially
independent of
operating temperature)

11.2

Rise Time

Turn Off Delay Time

td(off)

28.2

Fall Time

Total Gate Charge
(Gate-Source+Gate-Drain)

=10V, I

=1.0A,

=0.5BV

DSS

(MOSFET

switching time is
essentially independent of
operating temperature)

11.93

Gate-Source Charge

Qgs

1.95

Gate-Drain (Miller) Charge

Qgd

6.85

----

KA5X03XX-SERIES

Electrical Characteristics (Control Part)

(Continued)

(Ta = 25

C unless otherwise specified)

Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process

Characteristic

Symbol

Test condition

Min.

Typ.

Max.

Unit

UVLO SECTION
Start Threshold Voltage

START

=GND

Stop Threshold Voltage

STOP

=GND

8.4

9.6

OSCILLATOR SECTION

Initial Accuracy

OSC

KA5H0365R
KA5H0380R

100

110

kHz

Initial Accuracy

OSC

KA5M0365R
KA5M0365RN
KA5M0380R

kHz

Initial Accuracy

OSC

KA5L0365R
KA5L0365RN
KA5L0380R

kHz

Frequency Change With Temperature

(2)

-25

+85

Maximum Duty Cycle

Dmax

KA5H0365R
KA5H0380R

Maximum Duty Cycle

Dmax

KA5M0365R
KA5M0365RN
KA5M0380R
KA5L0365R
KA5L0365RN
KA5L0380R

FEEDBACK SECTION
Feedback Source Current

Ta=25

C, 0V<Vfb<3V

0.7

0.9

1.1

Shutdown Feedback Voltage

Vfb>6.5V

6.9

7.5

8.1

Shutdown Delay Current

Idelay

Ta=25

C, 5V

Vfb

REFERENCE SECTION
Output Voltage

(1)

Vref

Ta=25

4.80

5.00

5.20

Temperature Stability

(1)(2)

Vref/

-25

+85

0.3

0.6

mV/

CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit

OVER

Max. inductor current

1.89

2.15

2.41

PROTECTION SECTION
Over Voltage Protection

OVP

>24V

Thermal Shutdown Temperature (Tj)

(1)

140

160

TOTAL STANDBY CURRENT SECTION
Start-up Current

START

=14V

100

170

Operating Supply Current
(Control Part Only)

<28

KA5X03XX-SERIES

Typical Performance Characteristics(SenseFET part)

(KA5H0365R, KA5M0365R, KA5L0365R)

0.1

@Notes:

1. 300

s Pulse Test

2. T

= 25

Top : 15V

10V

8.0V

7.0V

6.0V

5.5V
5.0V

Bottom:4.5V

,
D

r
a
i
n

u
rr

ent

[
A
]

, Drain-Source Voltage [V]

0.1

@Notes:

1. V

= 30V

2. 300

s Pulse Test

-25

150

,
D

r
a
i
n C

u
r
r
ent

[
A
]

, Gate-Source Voltage [V]

@ Note : Tj=25

Vgs=10V

Vgs=20V

D
S
(
on)

, [

]

r
a
i
n-

our

c
e
O

n
-
R

i
s
t
anc

,Drain Current [A]

0.4

0.6

0.8

1.0

1.2

0.01

0.1

@Notes :

1. VGS = 0 V

2. 300

s Pulse Test

150

, R

e
v
e
r
s
e
D

r
ai

n
C

u
r
r
en

t
[A

]

, Source-Drain Voltage [V]

100

200

300

400

500

600

700

rss

oss

iss

= C

+ C

= shorted)

oss

= C

+ C

rss

= C

a
paci

t
an

c
e
[
p
F
]

, Drain-Source Voltage [V]

=520V

=320V

=130V

@ Note : I

=3.0A

,
G

our

c
e
V

o
l
t
a
ge[

V
]

,Total Gate Charge [nC]

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance vs. Drain Current

Figure 4. Source-Drain Diode Forward Voltage

Figure 5. Capacitance vs. Drain-Source Voltage

Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

Typical Performance Characteristics

(Continued)

-50

100

150

0.8

0.9

1.0

1.1

1.2

@ Notes :
1. V

= 0V

2. I

= 250

, Junction Temperature [

,
(
N

mal

i
z
ed)

r
a

i
n-

Sour

c
e
B

r
eak

o
w

n

V

o
l
t
a

g
e

-50

100

150

0.0

0.5

1.0

1.5

2.0

2.5

@ Notes:

1. V

= 10V

2. I

= 1.5 A

, Junction Temperature [

(
o
n
)

,
(

l
i
z
e
d)

r
ai

our

c
e
O

-
R

i
s
t
a
nc

-2

-1

100

1 ms

10 ms

@ Notes :

1. T

= 25

2. T

= 150

3. Single Pulse

Operation in This Area
is Limited by R

DS(on)

Drain

Curr

ent

[A]

, Drain-Source Voltage [V]

100

125

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

,

D

r
a
i
n C

u
r
r
ent [

A
]

, Case Temperature [

-5

-4

-3

-2

-1

-2

-1

single pulse

0.2

0.1

0.01

0.02

0.05

D=0.5

@ Notes :

1. Z

(t)=1.25

C/W Max.

2. Duty Factor, D=t

3. T

-T

(t)

(t) ,

Therma

l Respon

, Square Wave Pulse Duration [sec]

Figure 7. Breakdown Voltage vs. Temperature

Figure 8. On-Resistance vs. Temperature

Figure 9. Max. Safe Operating Area

Figure 10. Max. Drain Current vs. Case Temperature

Figure 11. Thermal Response

KA5X03XX-SERIES

Typical Performance Characteristics

(Continued)

(KA5H0380R, KA5M0380R, KA5L0380R)

-1

@Notes:

1. 300

s Pulse Test

2. T

= 25

Top : 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

Bottom:4.5V

, D

r
ai

n
C

u
r
r
e
n
t
[A

]

, Drain-Source Voltage [V]

-1

@ Notes:

1. V

= 30 V

2. 300

s Pulse Test

-25

150

,
D

r
ai

n C

u
rr

ent

[
A
]

, Gate-Source Voltage [V]

0.4

0.6

0.8

1.0

0.1

@ Notes:

1. V

= 0V

2. 300

s Pulse Test

150

,
R

e
v
e
rs

e D

r
ai

n C

u
rrent

[
A
]

, Source-Drain Voltage [V]

100

200

300

400

500

600

700

800

900

1000

rss

oss

iss

= C

+ C

= shorted)

oss

= C

+ C

rss

= C

n
c
e [p

F
]

, Drain-Source Voltage [V]

@ Note : I

=3.0A

=640V

=400V

=160V

,
G

a
t
e-S

ourc

e
V

o
l
t
age

[
V
]

,Total Gate Charge [nC]

Vgs=10V

Vgs=20V

@ Note : Tj=25

Fig3. On-Resistance vs. Drain Current

S
(
on)

[

]

r
a
i
n-

o
u
r
c
e
O

n
-
R

i
s
t
a
nc

,Drain Current

Figure 1. Output Characteristics

Figure 2. Thansfer Characteristics

Figure 3. On-Resistance vs. Drain Current

Figure 4. Source-Drain Diode Forward Voltage

Figure 5. Capacitance vs. Drain-Source Voltage

Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

Typical Performance Characteristics

(Continued)

(KA5H0380R, KA5M0380R, KA5L0380R)

- 5

- 4

- 3

- 2

- 1

- 2

- 1

single pulse

0.2

0.1

0.01

0.02

0.05

D=0.5

@ Notes :

1. Z

J C

(t)=1.25

C/W Max.

2. Duty Factor, D=t

3. T

J M

-T

D M

J C

(t)

) ,

her

mal

Res

pon

, Square Wave Pulse Duration [sec]

-50

100

150

0.8

0.9

1.0

1.1

1.2

@ Notes :
1. V

= 0V

2. I

= 250

, Junction Temperature [

,
(
N

o
r
m

a
liz

e
d
)

r
ai

n
-
S

our

c
e
B

r
eak

dow

o
l
t
ag

-50

100

150

0.0

0.5

1.0

1.5

2.0

2.5

(
on)

,
(
N

a
l
i
z
ed)

r
ai

our

c
e
O

n
-
R

i
s
t
anc

, Junction Temperature [

@ Notes:
1. V

= 10V

2. I

= 1.5 A

-2

-1

100

1 ms

10 ms

@ Notes :

1. T

= 25

2. T

= 150

3. Single Pulse

Operation in This Area
is Limited by R

DS(on)

, Drai

n Current [

]

, Drain-Source Voltage [V]

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

,
D

r
ai

n C

u
r
r
ent

[
A
]

, Case Temperature [

Figure 7. Breakdown Voltage vs. Temperature

Figure 8. On-Resistance vs. Temperature

Figure 9. Max. Safe Operating Area

Figure 10. Max. Drain Current vs. Case Temperature

Figure 11. Thermal Response

KA5X03XX-SERIES

Typical Performance Characteristics(SenseFET part)

(Continued)

(KA5M0365RN, KA5L0365RN)

-1

Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V

Note :

1. 250

s Pulse Test

2. T

= 25

,

D

r
ai

n
C

u
r
r
e
nt

[
A
]

, Drain-Source Voltage [V]

-1

Note

1. V

= 50V

2. 250

s Pulse Test

-55

150

,
D

r
ai

n C

u
r
r
ent

[

]

, Gate-Source Voltage [V]

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

= 20V

= 10V

Note : T

= 25

DS(

[

r
ai

n
-
S

o
ur

c
e
O

n
-
R

i
s
t
a
nc

, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-1

150

Note :

1. V

= 0V

2. 250

s Pulse Test

, R

e
v
e
r
s
e

D

r
a
i
n
C

u
r
r
e
n
t

[
A

]

, Source-Drain Voltage [V]

-1

100

200

300

400

500

600

700

iss

= C

+ C

= shorted)

oss

= C

+ C

rss

= C

Note ;

1. V

= 0 V

2. f = 1 MHz

rss

oss

iss

a
p
a
citanc

es [

p
F]

, Drain-Source Voltage [V]

= 325V

= 130V

= 520V

Note : I

= 3.0 A

, G

te-Source Vol

t
ag

e [V]

, Total Gate Charge [nC]

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance vs. Drain Current

Figure 4. Source-Drain Diode Forward Voltage

Figure 5. Capacitance vs. Drain-Source Voltage

Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

Typical Performance Characteristics

(Continued)

( KA5M0365RN, KA5L0365RN)

-50

100

150

0.90

0.95

1.00

1.05

1.10

1.15

Note :

1. V

= 0 V

2. I

= 250

,
(

a
l
i
z
ed)

r
ai

ce Br

eakdow

n

V

o
l
t
age

, Junction Temperature [

-50

100

150

0.5

1.0

1.5

2.0

2.5

Note :

1. V

= 10 V

2. I

= 1.5 A

)

,
(

a
l
i
zed)

Sour

On-

esi

s
t
a

nce

, Junction Temperature [

Figure 7. Breakdown Voltage vs. Temperature

Figure 8. On-Resistance vs. Temperature

Figure 9. Max. Safe Operating Area

Figure 10. Max. Drain Current vs. Case Temperature

Figure 11. Thermal Response

-3

-2

-1

10 s

1 s

100 ms

10 ms

1 ms

100

Operation in This Area
is Limited by R

DS(on)

,
Dr

a
i
n
Cu

r
r
e
n
t

[
A

]

, Drain-Source Voltage [V]

100

125

150

0.0

0.1

0.2

0.3

0.4

0.5

,
D

r
ai

n C

u
r
r
ent

[
A

]

, Case Temperature [? ]

1E-5

1E-4

1E-3

0.01

0.1

100

1000

0.1

0.05

0.02
0.01

single pulse

0.2

0.1

D=0.5

? Notes :
1. Z

? JC

(t) = 80 ? /W Max.

2. Duty Factor, D=t

3. T

- T

= P

* Z

? JC

(t)

(
t
)
,
T

her

l
R

onse

, Square Wave Pulse Duration [sec]

KA5X03XX-SERIES

Typical Performance Characteristics (Control Part)

(Continued)

(These characteristic graphs are normalized at Ta = 25

Fig.1 Operating Frequency

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

-25

100 125 150

Fosc

Fig.2 Feedback Source Current

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

-25

100 125 150

Ifb

Fig.3 Operating Current

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

-25

100 125 150

Iop

Fig.4 Max Inductor Current

0.8

0.85

0.9

0.95

1.05

1.1

-25

100 125 150

Ipeak

Fig.5 Start up Current

0.5

0.7

0.9

1.1

1.3

1.5

-25

100 125 150

Istart

Fig.6 Start Threshold Voltage

0.85

0.9

0.95

1.05

1.1

1.15

-25

75 100 125 150

Vstart

Figure 1. Operating Frequency

Figure 2. Feedback Source Current

Figure 3. Operating Supply Current

Figure 4. Peak Current Limit

Figure 5. Start up Current

Figure 6. Start Threshold Voltage

over

KA5X03XX-SERIES

Typical Performance Characteristics

(Continued)

(These characteristic graphs are normalized at Ta = 25

Fig.7 Stop Threshold Voltage

0.85

0.9

0.95

1.05

1.1

1.15

-25

100 125 150

Vstop

Fig.8 Maximum Duty Cycle

0.85

0.9

0.95

1.05

1.1

1.15

-25

75 100 125 150

Dmax

Fig.9 Vcc Zener Voltage

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

-25

100 125 150

Fig.10 Shutdown Feedback Voltage

0.85

0.9

0.95

1.05

1.1

1.15

-25

100 125 150

Vsd

Fig.11 Shutdown Delay Current

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

-25

100 125 150

Idelay

Fig.12 Over Voltage Protection

0.85

0.9

0.95

1.05

1.1

1.15

-25

100 125 150

Vovp

Figure 7. Stop Threshold Voltage

Figure 8. Maximum Duty Cycle

Figure 9. V

Zener Voltage

Figure 10. Shutdown Feedback Voltage

Figure 11. Shutdown Delay Current

Figure 12. Over Voltage Protection

KA5X03XX-SERIES

Ordering Information

TU :Non Forming Type
YDTU : Forming type

Product Number

Package

Marking Code

DSS

OSC

DS(on)

KA5H0365RTU

TO-220F-4L

5H0365R

650V

100kHz

3.6

KA5H0365RYDTU

TO-220F-4L(Forming)

KA5M0365RTU

TO-220F-4L

5M0365R

650V

67kHz

3.6

KA5M0365RYDTU

TO-220F-4L(Forming)

KA5L0365RTU

TO-220F-4L

5L0365R

650V

50kHz

3.6

KA5L0365RYDTU

TO-220F-4L(Forming)

KA5M0365RN

8-DIP

5M0365R

650V

67kHz

3.6

KA5L0365RN

8-DIP

5L0365R

650V

50kHz

3.6

Product Number

Package

Marking Code

DSS

OSC

DS(on)

KA5H0380RTU

TO-220F-4L

5H0380R

800V

100kHz

4.6

KA5H0380RYDTU

TO-220F-4L(Forming)

KA5M0380RTU

TO-220F-4L

5M0380R

800V

67kHz

4.6

KA5M0380RYDTU

TO-220F-4L(Forming)

KA5L0380RTU

TO-220F-4L

5L0380R

800V

50kHz

4.6

KA5L0380RYDTU

TO-220F-4L(Forming)

KA5X03XX-SERIES

12/12/02 0.0m 001

Stock#DSxxxxxxxx

2002 Fairchild Semiconductor Corporation

LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES

OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR

CORPORATION. As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, and (c) whose failure to

perform when properly used in accordance with
instructions for use provided in the labeling, can be

reasonably expected to result in a significant injury of the

user.

2. A critical component in any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

www.fairchildsemi.com

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER

DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: 5M0365R

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: 5M0365R