September 2005
2005 Fairchild Semiconductor Corporation
FDD6635 Rev. C(W)
www.fairchildsemi.com
FDD6635
35V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been produced using
Fairchild Semiconductor's proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
Inverter
Power Supplies
Features
59 A, 35 V
R
DS(ON)
= 10 m
@ V
GS
= 10 V
R
DS(ON)
= 13 m
@ V
GS
= 4.5 V
Fast Switching
RoHS compliant
G
S
D
TO-252
D-PAK
(TO-252)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source
Voltage
35
V
V
DS(Avalanche)
Drain-Source Avalanche Voltage (maximum)
(Note 4)
40
V
V
GSS
Gate-Source
Voltage
20
V
I
D
Continuous Drain Current @T
C
=25C
(Note 3)
59
A
@T
A
=25C
(Note 1a)
15
Pulsed
(Note 1a)
100
Power Dissipation
@T
C
=25C
(Note 3)
55
@T
A
=25C
(Note 1a)
3.8
P
D
@T
A
=25C
(Note 1b)
1.6
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
2.7
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
Quantity
FDD6635
FDD6635
D-PAK (TO-252)
13''
12mm
2500 units
FDD6635 35V N-Channel PowerTrench
MOSFET
FDD6635 Rev. C(W)
www.fairchildsemi.com
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min Typ
Max
Units
Drain-Source Avalanche Ratings
E
AS
Drain-Source Avalanche Energy
(Single Pulse)
V
DD
= 35 V, I
D
= 15 A, L=1mH
113
mJ
I
AS
Drain-Source Avalanche Current
15
A
Off Characteristics
(Note 2)
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V,
I
D
= 250
A
35 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
32
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 28 V,
V
GS
= 0 V
1
A
I
GSS
GateBody
Leakage
V
GS
=
20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250
A
1 1.9 3 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
5
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 13 A
V
GS
= 10 V, I
D
= 15 A, T
J
=125
C
8.2
10.2
12.4
10
13
16
m
g
FS
Forward
Transconductance
V
DS
= 5 V, I
D
= 15 A
53
S
Dynamic Characteristics
C
iss
Input
Capacitance
1400
pF
C
oss
Output
Capacitance
317
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 20 V,
V
GS
= 0 V,
f = 1.0 MHz
137 pF
R
G
Gate
Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.4
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
11
20
ns
t
r
TurnOn Rise Time
6
12
ns
t
d(off)
TurnOff Delay Time
28
45
ns
t
f
TurnOff
Fall
Time
V
DD
= 20 V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
14 25 ns
Q
g (TOT)
Total Gate Charge, V
GS
= 10V
26
36
nC
Q
g
Total Gate Charge, V
GS
= 5V
13
18
nC
Q
gs
GateSource
Charge
3.9
nC
Q
gd
GateDrain
Charge
V
DS
= 20 V, I
D
= 15 A
5.3 nC
FDD6635 35V N-Channel PowerTrench
MOSFET
FDD6635 Rev. C(W)
www.fairchildsemi.com
D
R
P
DS(ON)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min Typ
Max
Units
DrainSource Diode Characteristics
V
SD
DrainSource
Diode
Forward
Voltage
V
GS
= 0 V, I
S
= 15 A
(Note 2)
0.8
1.2
V
trr
Diode Reverse Recovery Time
26
ns
Qrr
Diode Reverse Recovery Charge
IF = 15 A, diF/dt = 100 A/s
16 nC
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) R
JA
= 40C/W when mounted on a
1in
2
pad of 2 oz copper
b) R
JA
= 96C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where P
D
is maximum power dissipation at T
C
= 25C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
4. BV(avalanche) rating is guaranteed if device is operated within the UIS SOA boundary of the device.
FDD6635 35V N-Channel PowerTrench
MOSFET
FDD6635 Rev. C(W)
www.fairchildsemi.com
Typical Characteristics
0
10
20
30
40
50
60
70
80
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DR
AIN CUR
REN
T
(A)
3.5V
V
GS
=10V
4.0V
3.0V
4.5V
6.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
10
20
30
40
50
60
70
80
I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
, NOR
M
AL
IZE
D
DR
A
I
N-S
O
UR
CE
ON-
R
E
S
IS
TAN
C
E
V
GS
= 3.5V
4.0V
6.0V
4.5V
5.0V
10V
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(O
N
)
,
NORM
ALI
Z
ED
DRAI
N-
SOURC
E
O
N
-
R
ESI
STA
NCE
I
D
= 15A
V
GS
= 10V
0.005
0.009
0.013
0.017
0.021
0.025
0.029
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(O
N
)
,
ON-
R
ESI
ST
ANCE (
O
HM
)
I
D
= 7.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
0
10
20
30
40
50
60
70
80
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
DRAI
N CURRENT (
A
)
T
A
=-55
o
C
25
o
C
V
DS
= 5V
125
o
C
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REV
E
R
SE DRA
IN CUR
REN
T
(A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD
6635
35
V N-
C
h
a
nn
e
l P
o
w
e
rTr
e
n
c
h
M
OS
FET
FDD6635 Rev. C(W)
www.fairchildsemi.com
Typical Characteristics
0
2
4
6
8
10
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
V
GS
,
GAT
E
-S
OUR
C
E
VOL
T
AGE
(V
)
I
D
= 15A
V
DS
= 10V
15V
20V
0
400
800
1200
1600
2000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
A
P
A
C
I
TA
NC
E (
pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DR
AI
N
CU
RR
EN
T (
A
)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
1ms
100s
10s
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(
pk
)
,
PEA
K T
RANSI
E
NT
POWER
(
W
)
SINGLE PULSE
R
JA
= 96C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
0
20
40
60
80
100
0.1
1
10
100
1000
t
1
, TIME (sec)
I(p
k
), PEAK T
RANSIENT
CURRENT
(A)
SINGLE PULSE
R
JA
= 96C/W
T
A
= 25C
1
10
100
1000
1
10
100
1000
10000
t
AV
, TIME IN AVANCHE(ms)
I
(A
S
)
,
AV
AL
AN
CHE
CUR
REN
T
T
J
= 25
o
C
Figure 11. Single Pulse Maximum Peak
Current
Figure 12. Unclamped Inductive Switching
Capability
FDD
6635
35
V N-
C
h
a
nn
e
l P
o
w
e
rTr
e
n
c
h
M
OS
FET
FDD6635 Rev. C(W)
www.fairchildsemi.com
Typical Characteristics
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(
t
)
,
NORM
AL
I
Z
E
D
E
F
F
E
CT
I
V
E
T
RANS
I
E
N
T
T
H
E
R
M
A
L
RE
S
I
S
T
ANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 96 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.0
0.02
0.05
0.1
0.2
D = 0.5
Figure 13. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD
6635
35
V N-
C
h
a
nn
e
l P
o
w
e
rTr
e
n
c
h
M
OS
FET
FDD6635 Rev. C(W)
www.fairchildsemi.com
Test Circuits and Waveforms
V
DS
L
R
GEN
DUT
V
GS
I
AS
0.01
V
DD
+
-
tp
0V
vary t
P
to obtain
required peak I
AS
V
GS
V
DS
L
R
GEN
DUT
V
GS
I
AS
0.01
V
DD
+
-
tp
0V
vary t
P
to obtain
required peak I
AS
V
GS
t
AV
t
P
I
AS
V
DS
V
DD
BV
DSS
t
AV
t
P
I
AS
V
DS
V
DD
BV
DSS
Figure 14. Unclamped Inductive Load Test
Circuit
Figure 15. Unclamped Inductive Waveforms
DUT
V
DD
V
GS
I
g(REF)
+
-
+
-
Same type as DUT
Drain Current Regulator
1
F
10
F
10V
50k
DUT
V
DD
V
GS
I
g(REF)
+
-
+
-
Same type as DUT
Drain Current Regulator
1
F
10
F
10V
50k
V
GS
Q
GS
Q
GD
Q
G
10V
Charge, (nC)
V
GS
Q
GS
Q
GD
Q
G
10V
Charge, (nC)
Figure 16. Gate Charge Test Circuit
Figure 17. Gate Charge Waveform
V
DS
R
L
R
GEN
DUT
V
DD
V
GS
Pulse Width
1s
Duty Cycle
0.1%
V
GS
+
-
V
DS
R
L
R
GEN
DUT
V
DD
V
GS
Pulse Width
1s
Duty Cycle
0.1%
V
GS
+
-
t
r
t
f
t
d(ON)
t
d(OFF)
t
ON
t
OFF
Pulse Width
10%
10%
90%
10%
90%
50%
90%
50%
0V
0V
V
GS
V
DS
t
r
t
f
t
d(ON)
t
d(OFF)
t
ON
t
OFF
Pulse Width
10%
10%
90%
10%
90%
50%
90%
50%
0V
0V
V
GS
V
DS
Figure 18. Switching Time Test Circuit
Figure 19. Switching Time Waveforms
FDD
6635
35
V N-
C
h
a
nn
e
l P
o
w
e
rTr
e
n
c
h
M
OS
FET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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