B
A
V19 / BA
V20 / BA
V21
BAV19/20/21, Rev.
C
BAV19 / 20 / 21
Small Signal Diode
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
DO-35
Color Band Denotes Cathode
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage BAV19
BAV20
BAV21
1
20
200
250
V
V
V
I
F(AV)
Average Rectified Forward Current
200
mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
A
T
stg
Storage Temperature Range
-65 to +200
C
T
J
Operating Junction Temperature
175
C
Symbol
Parameter
Value
Units
P
D
Power
Dissipation
500
mW
R
JA
Thermal Resistance, Junction to Ambient
300
C/W
Symbol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown Voltage
BAV19
BAV20
BAV21
I
R
= 100
A
I
R
= 100
A
I
R
= 100
A
120
200
250
V
V
V
V
F
Forward
Voltage
I
F
= 100 mA
I
F
= 200 mA
1.0
1.25
V
V
I
R
Reverse
Current
BAV19
BAV20
BAV21
V
R
= 100 V
V
R
= 100 V, T
A
= 150
C
V
R
= 150 V
V
R
= 150 V, T
A
= 150
C
V
R
= 200 V
V
R
= 200 V, T
A
= 150
C
100
100
100
100
100
100
nA
A
nA
A
nA
A
C
T
Total
Capacitance
V
R
= 0, f
= 1.0 MHz
5.0
pF
t
rr
Reverse Recovery Time
I
F
= I
R
= 30 mA, I
RR
= 3.0 mA,
R
L
= 100
50 ns
B
A
V19 / BA
V20 / BA
V21
BAV19/20/21, Rev.
C
Typical Characteristics
Small Signal Diode
(continued)
275
300
325
Ta=25 C
3 5 10 20 30 50 100
R
e
v
e
r
s
e V
o
l
t
age,
V
R
[V
]
Reverse Current, I
R
[uA]
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100uA
0
10
20
30
40
50
55 100
Ta= 25 C
R
e
ver
s
e C
u
r
r
ent
,
I
R
[n
A
]
Reverse Voltage, V
R
[V]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 2. Reverse Current vs Reverse Voltage
IR - 55 to 205 V
20
30
40
50
60
70
80
90
100
180 200 220 240 255
Ta= 25 C
Re
v
e
r
s
e
Cu
r
r
e
n
t
,
I
R
[n
A
]
Reverse Voltage, V
R
[V]
250
300
350
400
450
1 2 3 5 10 20 30 50 100
Ta= 25 C
Fo
rw
ar
d V
o
l
t
ag
e
,
V
R
[mV
]
Forward Current, I
F
[uA]
Figure 3. Reverse Current vs Reverse Roltage
IR - 180 to 225 V
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 4. Forward Voltage vs Forward Current
VF - 1.0 to 100uA
450
500
550
600
650
700
0.1 0.2 0.3 0.5 1 2 3 5 10
Ta= 25 C
Forw
ard V
o
l
t
age
,
V
F
[m
V
]
Forward Current, I
F
[mA]
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
10 20 30 50 100 200 300 500 800
Ta= 25 C
F
o
rw
ard V
o
lt
age,
V
F
[m
V
]
Forward Current, I
F
[mA]
Figure 5. Forward Voltage vs Forward Current
VF - 0.1 to 10mA
Figure 6. Forward Voltage vs Forward Current
VF - 10 to 800mA
B
A
V19 / BA
V20 / BA
V21
BAV19/20/21, Rev.
C
Typical Characteristics
(continued)
Small Signal Diode
(continued)
100
200
300
400
500
600
700
800
900
0.001 0.003 0.01 0.03 0.1 0.3 1 3 10
Ta= -40 C
Ta= 25 C
Ta= +80 C
F
o
r
w
ar
d
V
o
l
t
a
ge,
V
F
[m
V
]
Forw ard Current, I
F
[m A]
Figure 7. Forward Voltage
vs Ambient Temperature
VF - 1.0 uA - 10 mA (-40 to +80 Deg C)
0
2
4
6
8
10
12
14
0.8
0.9
1.0
1.1
1.2
1.3
Ta= 25 C
T
o
ta
l C
a
p
a
c
i
ta
n
c
e
[p
F
]
Reverse Voltage [V]
Figure 8. Total Capacitance
1.0
1.5
2.0
2.5
3.0
20
30
40
50
I
F
= I
R
= 30 mA
Rloop = 100 Ohms
Re
v
e
r
s
e
Re
c
o
v
e
r
y
Ti
m
e
[
n
S]
Reverse Recovery Current, I
rr
[mA]
0
50
100
150
0
100
200
300
400
I
F(AV
)
- AV
ER
AGE R
ECTIF
IED C
URR
EN
T - m
A
C
u
r
r
ent
[
m
A]
Ambient Temperature, T
A
[ C]
Figure 9. Reverse Recovery Time vs
Reverse Recovery Current
Figure 10. Average Rectified Current (I
F(AV)
)
versus Ambient Temperature (T
A
)
0
50
100
150
200
0
100
200
300
400
500
DO-35 Pkg
SOT-23 Pkg
P
o
w
e
r
Dis
s
i
pa
tion
,
P
D
[m
W
]
Average Temperature, I
O
[ C]
Figure 11. Power Derating Curve
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
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