BC369
PNP General Purpose Amplifier
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
20
V
V
CES
Collector-Base Voltage
25
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
1.5
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
BC369
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
C/W
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 77.
B
C
E
TO-92
1997 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
BC369
3
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 5.0 mA, V
CE
= 10 V
I
C
= 0.5 A, V
CE
= 1.0 V
I
C
= 1.0 A, V
CE
= 1.0 V
50
85
60
375
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 100 mA
0.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 1.0 A, V
CE
= 1.0 V
1.0
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 5.0 V,
f = 35 MHz
45
MHz
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 10 mA, I
B
= 0
20
V
V
(BR)CES
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
25
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
5.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 25 V, I
E
= 0
V
CB
= 25 V, I
E
= 0, T
A
= 150
C
10
1.0
A
mA
I
EBO
Emitter-Cutoff Current
V
EB
= 5.0 V, I
C
= 0
10
A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
BC369
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Collector- Emitter Saturation
Voltage vs Collector Current
0.01
0.1
1
3
0
0.2
0.4
0.6
0.8
1
I - COLLE CTOR CURRENT (A)
V
-
C
O
L
L
E
C
T
O
R
-
EM
I
T
T
E
R
VO
L
T
A
G
E (
V
)
C
ESA
T
- 40 C
25 C
C
= 10
125 C
Typical Pulsed Current Gain
vs Collector Current
0.01
0.1
1
2
0
50
100
150
200
250
300
I - COLLECTOR CURRENT (A)
h
-
TY
P
I
C
A
L P
U
LS
E
D
C
U
R
R
E
N
T G
A
I
N
FE
- 40 C
25 C
C
V = 5.0V
CE
125 C
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
TEMPER ATURE ( C)
P
-
P
O
W
E
R DI
S
S
I
P
AT
I
O
N (
m
W
)
D
o
TO-92
Typical Characteristics
(continued)
Collector-Base Capacitance
vs Collector-Base Voltage
0
10
20
30
0
10
20
30
40
V - COLLECTOR-BASE VOLTAGE (V)
C
-
C
O
L
L
E
CT
OR
-
B
AS
E
C
A
P
A
CI
T
A
NC
E
(
p
F
)
OB
O
CB
f = 1.0 MHz
Gain Bandwidth Product
vs Collector Current
1
10
100
1000
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
f
- G
A
IN
B
A
N
D
W
I
D
T
H
P
R
O
D
U
C
T
(M
H
z
)
T
C
V = 10V
CE
Base-Emitter ON Voltage vs
Collector Current
1
10
100
1000
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-
E
M
IT
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
BE
(
O
N)
C
V = 5.0 V
CE
- 40 C
25 C
125 C
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
1000
0.4
0.6
0.8
1
I - COLLECTOR CURRENT ( mA)
V
-
B
A
S
E
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
BE
S
A
T
C
= 10
- 40 C
25 C
125 C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
T - AM BIENT TE MPE RATURE ( C)
I
-
C
O
L
L
E
CT
O
R
CU
RR
E
N
T
(
n
A)
A
V = 2 0V
CB
CB
O
PNP General Purpose Amplifier
(continued)
BC369
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not intended to be an exhaustive list of all such trademarks.
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systems which, (a) are intended for surgical implant into
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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