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2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC807/
BC808
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CES
Collector-Emitter Voltage
: BC807
: BC808
-50
-30
V
V
V
CEO
Collector-Emitter Voltage
: BC807
: BC808
-45
-25
V
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current (DC)
-800
mA
P
C
Collector Power Dissipation
-310
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-65 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
: BC807
: BC808
I
C
= -10mA, I
B
=0
-45
-25
V
V
BV
CES
Collector-Emitter Breakdown Voltage
: BC807
: BC808
I
C
= -0.1mA, V
BE
=0
-50
-30
V
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -0.1mA, I
C
=0
-5
V
I
CES
Collector Cut-off Current
V
CE
= -25V, V
BE
=0
-100
nA
I
EBO
Emitter Cut-off Current
V
EB
= -4V, I
C
=0
-100
nA
h
FE1
h
FE2
DC Current Gain
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -300mA
100
60
630
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -500mA, I
B
= -50mA
-0.7
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
= -1V, I
C
= -300mA
-1.2
V
f
T
Current Gain Bandwidth Product
V
CE
= -5V, I
C
= -10mA
f=50MHz
100
MHz
C
ob
Output Capacitance
V
CB
= -10V, f=1MHz
12
pF
BC807/BC808
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages
Complement to BC817/BC818
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC807/
BC808
h
FE
Classification
Marking Code
Classification
16
25
40
h
FE1
100 ~ 250
160 ~ 400
250 ~ 630
h
FE2
60-
100-
170-
Type
807-16
807-25
807-40
808-16
808-25
808-40
Marking
9FA
9FB
9FC
9GA
9GB
9GC
2002 Fairchild Semiconductor Corporation
BC807/
BC808
Rev. A2, August 2002
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. Static Characteristic
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage
Figure 6. Input Output Capacitance
-0
-1
-2
-3
-4
-5
-0
-100
-200
-300
-400
-500
P
T
= 600m
W
I
B
= - 3.
0mA
I
B
= - 2.
0mA
I
B
= - 3.
5mA
I
B
= - 1.0mA
I
B
= - 1.
5mA
I
B
= - 0.5mA
I
B
= - 4.
0mA
I
B
= - 2.
5mA
I
B
= - 4.
5mA
I
B
= - 5.
0mA
I
B
= 0
I
C
[m
A],
COL
L
ECT
O
R
CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0
-10
-20
-30
-40
-50
-0
-4
-8
-12
-16
-20
P
T
= 60
0m
W
I
B
= - 8
0
A
I
B
= - 7
0
A
I
B
= - 6
0
A
I
B
= - 5
0
A
I
B
= - 4
0
A
I
B
= - 3
0
A
I
B
= - 20
A
I
B
= - 10
A
I
B
= 0
I
C
[
m
A]
,
CO
L
L
E
CT
OR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.1
-1
-10
-100
-1000
1
10
100
1000
PULSE
- 1.0V
V
CE
= - 2.0V
h
FE
, DC C
URRENT
GAI
N
I
C
[mA], COLLECTOR CURRENT
-0.1
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
I
C
= 10 I
B
PULSE
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
),
V
CE
(
s
at)
[
V
], S
A
T
URA
T
ION
V
O
LT
A
G
E
I
C
[mA], COLLECTOR CURRENT
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-0.1
-1
-10
-100
-1000
V
CE
= -1V
PULSE
I
C
[m
A
], CO
LL
E
C
T
O
R CUR
RE
NT
V
BE
[V], BASE-EMITTER VOLTAGE
-0.1
-1
-10
-100
1
10
100
C
ib
f = 1.0MHz
C
ob
C
ib
, C
ob
[p
F
], C
APAC
IT
AN
C
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
EB
[V], EMITTER-BASE VOLTAGE
2002 Fairchild Semiconductor Corporation
BC807/
BC808
Rev. A2, August 2002
Typical Characteristics
(Continued)
Figure 7. Current Gain Bandwidth Product
-1
-10
-100
10
100
1000
V
CE
= -5.0V
f
T
[M
H
z
], G
A
IN BANDW
I
D
T
H
PRO
DUC
T
I
C
[mA], COLLECTOR CURRENT
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40
0.03
2.90
0.10
0.95
0.03
0.95
0.03
1.90
0.03
0.508REF
0.97REF
1.30
0.10
0.45~0.60
2.40
0.10
+0.05
0.023
0.20 MIN
0.40
0.03
SOT-23
Package Dimensions
BC807/
BC808
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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