2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC856/
857/
858
/859
/86
0
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: BC856
: BC857/860
: BC858/859
-80
-50
-30
V
V
V
V
CEO
Collector-Emitter Voltage
: BC856
: BC857/860
: BC858/859
-65
-45
-30
V
V
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current (DC)
-100
mA
P
C
Collector Power Dissipation
310
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-65 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
= -30V, I
E
=0
-15
nA
h
FE
DC Current Gain
V
CE
= -5V, I
C
= -2mA
110
800
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
-90
-250
-300
-650
mV
mV
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
-700
-900
mV
mV
V
BE
(on)
Base-Emitter On Voltage
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
-600
-660
-750
-800
mV
mV
f
T
Current Gain Bandwidth Product
V
CE
= -5V, I
C
= -10mA
f=100MHz
150
MHz
C
ob
Output Capacitance
V
CB
= -10V, I
E
=0, f=1MHz
6
pF
NF
Noise Figure
: BC856/857/858
: BC859/860
: BC859
: BC860
V
CE
= -5V, I
C
= -200
A
f=1KHz, R
G
=2K
V
CE
= -5V, I
C
= -200
A
R
G
=2K
,
f=30~15000Hz
2
1
1.2
1.2
10
4
4
2
dB
dB
dB
dB
BC856/857/858/859/860
Switching and Amplifier Applications
Suitable for automatic insertion in thick and thin-film circuits
Low Noise: BC859, BC860
Complement to BC846 ... BC850
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
2002 Fairchild Semiconductor Corporation
BC856/
857/
858
/859
/86
0
Rev. A2, August 2002
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
I
B
= - 50
A
I
B
= - 100
A
I
B
= - 150
A
I
B
= - 200
A
I
B
= - 250
A
I
B
= - 300
A
I
B
= - 350
A
I
B
= - 400
A
I
C
[mA
]
,
COL
L
E
C
TOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.1
-1
-10
-100
10
100
1000
V
CE
= - 5V
h
FE
, DC C
URRE
NT
G
A
I
N
I
C
[mA], COLLECTOR CURRENT
-0.1
-1
-10
-100
-0.01
-0.1
-1
-10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
),
V
CE
(
s
at)
[
V
], S
A
T
URA
T
ION
V
O
LT
A
G
E
I
C
[mA], COLLECTOR CURRENT
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-0.1
-1
-10
-100
V
CE
= - 5V
I
C
[m
A], CO
L
L
ECT
O
R CU
RRENT
V
BE
[V], BASE-EMITTER VOLTAGE
-1
-10
-100
1
10
f=1MHz I
E
=0
C
ob
[p
F
], CAP
A
CI
T
A
NCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
-1
-10
10
100
1000
f=1MHz I
E
=0
f
T
[
M
Hz]
,
CUR
RENT
GAIN-
B
A
N
DWIDT
H
PRO
DUCT
I
C
[mA], COLLECTOR CURRENT
2002 Fairchild Semiconductor Corporation
Rev. I1
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intended to be an exhaustive list of all such trademarks.
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As used herein:
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when properly used in accordance with instructions for use
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device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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Advance Information
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This datasheet contains the design specifications for
product development. Specifications may change in
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This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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