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BCW65C
BCW65C
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 500 mA. Sourced from Process 19.
C
E
B
SOT-23
Mark: ED
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
32
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
1.0
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
*BCW65C
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
357
C/W
*
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
BCW65C
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 10 mA, I
B
= 0
32
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
60
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
5.0
V
I
CES
Collector-Cutoff Current
V
CB
= 32 V, I
E
= 0
V
CB
= 32 V, I
E
= 0, T
A
= 150
C
20
20
nA
A
I
EBO
Emitter-Cutoff Current
V
EB
= 4.0 V, I
C
= 0
20
nA
Electrical Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 100
A, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 2.0 V
80
180
250
50
630
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 100 mA, I
B
= 10 mA
I
C
= 500 mA,
B
= 50 mA
0.3
0.7
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 500 mA, I
B
= 50 mA
2.0
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 20 mA, V
CE
= 10 V,
f = 100 MHz
100
MHz
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
12
pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz
80
pF
NF
Noise Figure
I
C
= 0.2 mA, V
CE
= 5.0,
R
S
= 1.0 k
, f = 1.0 kHz,
BW = 200 Hz
10
dB
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V
-
COLL
ECT
O
R
-
EMI
T
TER VOL
T
A
G
E
(
V
)
CES
A
T
25 C
C
= 10
125 C
- 40 C
Typical Pulsed Current Gain
vs Collector Current
0.1
0.3
1
3
10
30
100
300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
TYPI
C
A
L P
U
LS
ED CU
RRENT
GA
I
N
C
FE
125 C
25 C
- 40 C
V = 5V
CE
BCW65C
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
I
T
T
E
R
ON VOL
T
A
G
E (
V
)
BE
(
O
N
)
C
V = 5V
CE
25 C
125 C
- 40 C
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
- BA
SE-EM
I
TTER
VO
L
T
A
G
E
(V)
BE
SA
T
C
= 10
25 C
125 C
- 40 C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
- COLL
ECT
O
R
CURRE
NT (nA
)
A
V
= 40V
CB
CB
O
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
0.1
1
10
100
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CA
P
A
CI
T
A
N
C
E (
p
F
)
f = 1 MHz
C ob
C te
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P
-
POW
E
R DISSI
P
A
TI
ON (
m
W
)
D
o
SOT-23
TRADEMARKS
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This datasheet contains the design specifications for
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any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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any time without notice in order to improve design.
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In Design
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