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Электронный компонент: BSR16/T1

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DATA SHEET
Product specification
Supersedes data of 1997 May 14
1999 Apr 15
DISCRETE SEMICONDUCTORS
BSR15; BSR16
PNP switching transistors
book, halfpage
M3D088
1999 Apr 15
2
Philips Semiconductors
Product specification
PNP switching transistors
BSR15; BSR16
FEATURES
High current (max. 600 mA)
Low voltage (max. 60 V).
APPLICATIONS
Medium power switching.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complements: BSR13 and BSR14.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE
(1)
BSR15
T7
BSR16
T8
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
60
V
V
CEO
collector-emitter voltage
open base
BSR15
-
-
40
V
BSR16
-
-
60
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
600
mA
I
CM
peak collector current
-
-
800
mA
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
C
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 15
3
Philips Semiconductors
Product specification
PNP switching transistors
BSR15; BSR16
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
BSR15
I
E
= 0; V
CB
=
-
50 V
-
-
20
nA
I
E
= 0; V
CB
=
-
50 V; T
j
= 150
C
-
-
20
A
collector cut-off current
BSR16
I
E
= 0; V
CB
=
-
50 V
-
-
10
nA
I
E
= 0; V
CB
=
-
50 V; T
j
= 150
C
-
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
50
nA
h
FE
DC current gain
I
C
=
-
0.1 mA; V
CE
=
-
10 V
BSR15
35
-
BSR16
75
-
DC current gain
I
C
=
-
1 mA; V
CE
=
-
10 V
BSR15
50
-
BSR16
100
-
DC current gain
I
C
=
-
10 mA; V
CE
=
-
10 V
BSR15
75
-
BSR16
100
-
DC current gain
I
C
=
-
150 mA; V
CE
=
-
10 V; note 1
100
300
DC current gain
I
C
=
-
500 mA; V
CE
=
-
10 V; note 1
BSR15
30
-
BSR16
50
-
V
CEsat
collector-emitter saturation
voltage
I
C
=
-
150 mA; I
B
=
-
15 mA
-
-
400
mV
I
C
=
-
500 mA; I
B
=
-
50 mA
-
-
1.6
V
V
BEsat
base-emitter saturation voltage
I
C
=
-
150 mA; I
B
=
-
15 mA
-
-
1.3
V
I
C
=
-
500 mA; I
B
=
-
50 mA
-
-
2.6
V
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
8
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
=
-
2 V; f = 1 MHz
-
30
pF
f
T
transition frequency
I
C
=
-
50 mA; V
CE
=
-
20 V; f = 100 MHz 200
-
MHz
1999 Apr 15
4
Philips Semiconductors
Product specification
PNP switching transistors
BSR15; BSR16
Note
1. Pulse test: t
p
300
s;
0.02.
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
turn-on time
I
Con
=
-
150 mA; I
Bon
=
-
15 mA;
I
Boff
= 15 mA
-
40
ns
t
d
delay time
-
12
ns
t
r
rise time
-
30
ns
t
off
turn-off time
-
365
ns
t
s
storage time
-
300
ns
t
f
fall time
-
65
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Fig.2 Test circuit for switching times.
andbook, full pagewidth
RC
R2
R1
DUT
MGD624
Vo
RB
(probe)
450
(probe)
450
oscilloscope
oscilloscope
VBB
Vi
VCC
V
i
=
-
9.5 V; T = 500
s; t
p
=
10
s; t
r
= t
f
3 ns.
R1 = 68
; R2 = 325
; R
B
= 325
; R
C
= 160
.
V
BB
= 3.5 V; V
CC
=
-
29.5 V.
Oscilloscope: input impedance Z
i
= 50
.
1999 Apr 15
5
Philips Semiconductors
Product specification
PNP switching transistors
BSR15; BSR16
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23