DF005M - DF10M
DF005M - DF10M
1.5 Ampere Bridge Rectifiers
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).
Electrical Characteristics
T
A
= 25C unless otherwise noted
Discrete POWER & Signal
Technologies
1998 Fairchild Semiconductor Corporation
Features
Surge overload rating: 50 amperes
peak.
Glass passivated junction.
Low leakage.
Parameter
Device
Units
005M
01M
02M
04M
06M
08M
10M
Peak Repetitive Reverse Voltage
50
100
200
400
600
800
1000
V
Maximum RMS Bridge Input Voltage
35
70
140
280
420
560
700
V
DC Reverse Voltage
(Rated V
R
)
50
100
200
400
600
800
1000
V
Maximum Reverse Leakage,
total bridge @ rated V
R
T
A
= 25
C
T
A
= 125
C
5.0
500
A
A
Maximum Forward Voltage Drop,
per bridge
@ 1.0 A
1.1
V
I
2
t rating for fusing
t < 8.35 ms
10
A
2
Sec
Typical Junction Capacitance, per leg
V
R
= 4.0 V, f = 1.0 MHz
25
pF
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
@ T
A
= 40
C
1.5
A
i
f(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
50
A
P
D
Total Device Dissipation
Derate above 25
C
3.1
25
W
mW/
C
R
JA
Thermal Resistance, Junction to Ambient,** per leg
40
C/W
T
stg
Storage Temperature Range
-55 to +150
C
T
J
Operating Junction Temperature
-55 to +150
C
DIP
+
0.315 (8.001)
0.285 (7.239)
0.255 (6.477)
0.245 (6.223)
0.075 (1.905)
0.055 (1.397)
0.335 (8.509)
0.320 (8.128)
0.350 (8.890)
0.300 (7.620)
0.185 (4.699)**
0.150 (3.810)**
0.130 (3.302)*
0.120 (3.408)*
0.205 (5.207)
0.195 (4.953)
0.045 (1.143)
0.035 (0.889)
0.022 (0.559)
0.018 (0.457)
LOW PROFILE ALSO AVAILABLE
BODY - - 0.102 (2.591)*
0.095 (2.413)*
LEAD - - 0.080 (2.032)**
0.050 (1.270)**
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