EGP30A-EGP30K
EGP30A - EGP30K, Rev.
C
2001 Fairchild Semiconductor Corporation
EGP30A - EGP30K
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25C unless otherwise noted
Features
Glass passivated cavity-free junction.
High surge current capability.
Low leakage current.
Superfast recovery time for high
efficiency.
Low forward voltage, high current
capability.
DO-201AD
COLOR BAND DENOTES CATHODE
Thermal Characteristics
Symbol
Parameter
Device
Units
30A 30B 30C 30D 30F 30G 30J 320
V
F
Forward Voltage @ 3.0 A
0.95
1.25
1.7
V
t
rr
Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
50
75 ns
I
R
Reverse Current @ rated V
R
T
A
= 25
C
T
A
= 125
C
5.0
100
A
A
C
T
Total
Capacitance
V
R
= 4.0 V, f = 1.0 MHz
95 75
pF
Symbol
Parameter
Value
Units
30A 30B 30C 30D 30F 30G 30J 320
V
R
Breakdown Voltage
50 100 150
200 300 400 600 800
V
I
F(AV)
Average Rectified Forward Current,
.375 " lead length @ T
A
= 55
C
3.0 A
I
FSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
125 A
T
stg
Storage Temperature Range
-65 to +150
C
T
J
Operating Junction Temperature
-65 to +150
C
Symbol
Parameter
Value
Units
P
D
Power
Dissipation
6.25
W
R
JA
Thermal Resistance, Junction to Ambient
20
C/W
R
JL
Thermal Resistance, Junction to Lead
8.5
C/W
EGP30A - EGP30K, Rev.
C
EGP30A-EGP30K
2001 Fairchild Semiconductor Corporation
Typical Characteristics
0
25
50
75
100
125
150
175
0
1
2
3
Ambient Temperature [C]
Average Rectified Forward Current, I
F
[A]
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
1
2
5
10
20
50
100
0
25
50
75
100
125
150
175
Number of Cycles at 60Hz
Peak Forward Surge Current, I
FSM
[A]
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.01
0.1
1
10
50
Forward Voltage, V
F
[V]
Forward Current, I
F
[A]
Pulse Width = 300
s
2% Duty Cycle
T = 25 C
A
EGP30A-EGP30D
EGP30F-EGP30K
T = 150 C
A
0.1
1
10
100
1000
0
30
60
90
120
150
180
210
Reverse Voltage, V
R
[V]
Total Capacitance, C
T
[pF]
EGP30F-EGP30K
EGP30A-EGP30D
Pulse
Generator
(Note 2)
50
NONINDUCTIVE
50
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50
NONINDUCTIVE
50V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 10 ns/ cm
0
20
40
60
80
100
120
140
0.001
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, I
R
[mA]
T = 25 C
A
T = 75 C
A
T = 125 C
A
T = 150 C
A
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
Figure 3. Forward Voltage Characteristics
Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Formative or
In Design
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