EGP30A-EGP30K
EGP30A - EGP30K, Rev. A
EGP30A - EGP30K
3.0 Ampere Glass Passivated High Efficiency Rectifiers
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25C unless otherwise noted
1999 Fairchild Semiconductor Corporation
Symbol Parameter Value Units
I
O
Average Rectified Current
.375 " lead length @ T
A
= 55
C
3.0 A
i
f(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
125
A
P
D
Total Device Dissipation
Derate above 25
C
6.25
50
W
mW/
C
R
JA
Thermal Resistance, Junction to Ambient 20
C/W
R
JL
Thermal Resistance, Junction to Lead 8.5
C/W
T
stg
Storage Temperature Range -65 to +150
C
T
J
Operating Junction Temperature -65 to +150
C
Features
Glass passivated cavity-free junction.
High surge current capability.
Low leakage current.
Superfast recovery time for high
efficiency.
Low forward voltage, high current
capability.
Parameter Device Units
30A 30B 30C 30D 30F 30G 30J 30K
Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V
Maximum RMS Voltage 35 70 105 140 210 280 420 560 V
DC Reverse Voltage (Rated V
R
) 50 100 150 200 300 400 600 800 V
Maximum Reverse Current
@ rated V
R
T
A
= 25
C
T
A
= 125
C
5.0
100
A
A
Maximum Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
50 75 nS
Maximum Forward Voltage @ 3.0 A 0.95 1.25 1.7 V
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
95 75 pF
DO-201AD
COLOR BAND DENOTES CATHODE
Dimensions in inches (mm)
0.052 (1.32)
0.048 (1.22)
1.0 min
(25.4)
0.210 (5.33)
0.190 (4.83)
0.375 (9.53)
0.285 (7.24)
Discrete POWER & Signal
Technologies
EGP30A-EGP30K
EGP30A - EGP30K, Rev. A
Typical Characteristics
Forward Current Derating Curve
0
25
50
75
100
125
150
175
0
1
2
3
AMBIENT TEMPERATURE ( C)
FO
RW
AR
D
CU
RRE
NT
(A
)
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
Non-Repetitive Surge Current
1
2
5
10
20
50
100
0
25
50
75
100
125
150
175
NUMBER OF CYCLES AT 60Hz
PE
A
K
FO
R
W
A
R
D
S
U
RG
E
C
U
R
R
E
N
T
(
A
)
Forward Characteristics
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.01
0.1
1
10
50
FORWARD VOLTAGE (V)
F
O
R
W
A
R
D
CU
RR
E
N
T
(
A
)
Pulse Width = 300
s
2% Duty Cycle
T = 25 C
A
EGP30A-EGP30D
EGP30F-EGP30K
T = 150 C
A
Junction Capacitance
0.1
1
10
100
1000
0
30
60
90
120
150
180
210
REVERSE VOLTAGE (V)
C
A
PA
C
I
TA
NC
E (
p
F
)
EGP30F-EGP30K
EGP30A-EGP30D
P u l s e
G e n e r a t o r
(Note 2)
50
N O N I N D U C T I V E
50
N O N I N D U C T I V E
D U T
(-)
(+)
O S C I L L O S C O P E
(Note 1)
50
N O N I N D U C T I V E
5 0 V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 10 ns/ cm
Reverse Characteristics
0
20
40
60
80
100
120
140
0.001
0.01
0.1
1
10
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
R
E
V
E
R
S
E
C
URR
E
N
T (
A)
T = 25 C
A
T = 75 C
A
T = 125 C
A
T = 150 C
A
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
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