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Электронный компонент: FAN7361MX

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2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
September 2005
FAN7361,FAN7362 Rev. 1.0.0
F
A
N
7361
/F
A
N
7
362 Hi
gh-S
i
de

Ga
te Dri
ver
FAN7361, FAN7362
FAN7361, FAN7362
FAN7361, FAN7362
FAN7361, FAN7362
High-Side Gate Driver
High-Side Gate Driver
High-Side Gate Driver
High-Side Gate Driver
Features
Floating Channel Designed for Bootstrap Operation to
+600V.
Typically 250mA/500mA Sourcing/Sinking Current Driving
Capability
Common-Mode dv/dt Noise Canceling Circuit
VCC & VBS Supply Range from 10V to 20V
UVLO Function
Output In-phase with Input
Typical Applications
Fluorescent Lamp Ballast
PDP Scan Driver
Motor Control
Description
The FAN7361
/
2, a monolithic high-side gate driver IC, can drive
MOSFETs and IGBTs which operate up to +600V. Fairchild's
high voltage process and common-mode noise canceling tech-
nique provides stable operation of the high-side driver under
high dv/dt noise circumstances. An advanced level short circuit
allows high-side gate driver operation up to V
S
=-9.8V(typ.) for
V
BS
=15V.
The UVLO circuit prevents malfunction when V
BS
is lower than
the specified threshold voltage. Output drivers typically source/
sink 250mA/500mA, respectively, which is suitable for fluores-
cent lamp ballast, PDP scan driver, motor control, and so on.
8SOIC
1
2
www.fairchildsemi.com
FAN7361,FAN7362 Rev. 1.0.0
F
A
N
7361
/F
A
N
7
362 Hi
gh-S
i
de

Ga
te Dri
ver
Block Diagrams
Pin Assignments
Pin Definitions
Pine Number
Pin Name
I/O
Pin Function Description
1
NC
-
No Connection
2
IN
I
Logic Input for High Side Gate Driver Output
3
Vcc
I
Supply Voltage
4
GND
I
Logic Ground
5
NC
-
No Connection
6
VS
I
High Voltage Floating Supply Return
7
HO
O
High Side Driver Output
8
VB
I
High Side Floating Supply
HO
GND
VCC
IN
6
7
VS
VB
LEVEL
SHIFTER
NOISE
CANCELLER
4
2
8
3
SHORT PULSE
GENERATOR
R
S
R
Q
UVLO
DR
I
V
ER
HIGH-SIDE DRIVER
1
2
3
4
8
7
6
5
GND
IN
NC
HO
NC
V
CC
V
S
V
B
FAN7361/2
FAN7361/7362
3
www.fairchildsemi.com
FAN7361,FAN7362 Rev. 1.0.0
F
A
N
7361
/F
A
N
7
362 Hi
gh-S
i
de

Ga
te Dri
ver
Absolute Maximum Ratings
Notes:
1.Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltage referenced to GND, all currents are defined positive into any lead.
Recommended Operating Ratings
ESD Level
Parameter
Symbol
Min.
Max.
Unit
Highg side offset voltage
V
S
V
B
-25
V
B
+0.3
V
High side floating supply voltage
VB
-0.3
625
High side floating output voltage HO
V
HO
V
S
-0.3
V
B
+0.3
Logic fixed supply voltage
V
CC
-0.3
25
Logic input voltage (IN)
V
IN
-0.3
Vcc+0.3
Allowable offset voltage slew rate
dVs/dt
-
50
V/ns
Power dissipation
P
D
-
0.625
W
Thermal resistance, junction to ambient
Rthja
-
200
C/W
Junction temperature
T
J
-
150
C
Storage
temperature
T
S
-
150
C
Parameter
Symbol
Min.
Max.
Unit
High side floating supply voltage
V
B
V
S
+10
V
S
+20
V
High side floating supply offset voltage
V
S
6-Vcc
600
High side (HO) output voltage
V
HO
V
S
V
B
Logic input voltage (IN)
V
IN
GND
Vcc
Logic supply voltage
V
CC
10
20
Ambient Temperature
T
A
-40
125
C
Parameter
Pins
Conditions
Level
Unit
Human Body Model
(HBM)
IN, VCC, COM, VB, HO
R=1.5k
, C=100pF
1500
V
VS
1000
Machine Model (MM)
All Pins
C=200pF
300
Charged Device Model (CDM)
All Pins
500
4
www.fairchildsemi.com
FAN7361,FAN7362 Rev. 1.0.0
F
A
N
7361
/F
A
N
7
362 Hi
gh-S
i
de

Ga
te Dri
ver
Electrical Characteristics
(V
BIAS
(V
CC
, V
BS
)=15.0V, T
A
= 25
C, unless otherwise specified. The V
IN
and I
IN
parameters are referenced to GND. The V
O
and I
O
parameters are referenced to V
S.
Dynamic Electrical Characteristics
(V
BIAS
(V
CC
, V
BS
) = 15.0V, V
S
=GND, C
L
=1000pF and T
A
= 25
C, unless otherwise specified.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
VBS supply under voltage positive
becoming
threshold
VBSUV+(FAN7361)
V
IN
=0V
8.2
9.2
10.2
V
VBSUV+(FAN7362)
7.6
8.6
9.6
VBS supply under voltage negative
becoming
threshold
VBSUV-(FAN7361)
V
IN
=0V
7.4
8.6
9.2
VBSUV-(FAN7362)
7.2
8.2
9.2
VBS supply under voltage lockout hyster-
esis
VBSHYS(FAN7361)
V
IN
=0V
-
0.5
-
VBSHYS(FAN7362)
-
0.4
-
Offset supply leakage current
I
LK
V
B
=V
S
=HO=600V
-
-
10
A
Quiescent VBS supply current
I
QBS
V
IN
=0V or 5V
-
50
80
Quiescent VCC supply current
I
QCC
V
IN
=0V -
30
75
Operating VBS supply current
I
PBS
C
L
=1nF, f=10kHz
-
420
550
Logic "1" input voltage
V
IH
(FAN7361)
-
3.6
-
-
V
V
IH
(FAN7362)
-
3.3
-
-
Logic "0" input voltage
V
IL
(FAN7361)
-
-
-
1.0
V
IL
(FAN7362)
-
-
-
0.8
High level output voltage,
V
-V
HO
V
OH
No load
-
-
0.1
Low level output voltage, V
HO
V
OL
No load
-
-
0.1
Logic "1" input bias current
I
IN+
V
IN
=5V
-
50
90
A
Logic "0" input bias current
I
IN-
V
IN
=0V
-
1.0
2.0
Output high short circuit pulse current
I
O+
V
HO
=0V, V
IN
=5V, PW
10us
200
250
-
mA
Output low short circuit pulsed current
I
O-
V
HO
=15V, V
IN
=0V,
PW
10us
400
500
-
Allowable negative VS pin voltage for IN
signal propagation to HO
VS
-
-
-9.8
-7
V
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Turn-on propagation delay
t
on
V
S
=0V
-
120
200
ns
Turn-off propagation delay
t
off
V
S
=0V or 600V
-
90
180
Turn-on rise time
t
r
-
-
70
160
Turn-off fall time
t
f
-
-
30
100
5
www.fairchildsemi.com
FAN7361,FAN7362 Rev. 1.0.0
F
A
N
7361
/F
A
N
7
362 Hi
gh-S
i
de

Ga
te Dri
ver
Typical Characteristics
VCC=15V
IN=COM=0V
VCC=15V
IN=COM=0V
Fig. 4 Turn On/Off Propagation Time vs. Temperature
Fig. 2 Input Bias Current vs. Supply Voltage
Fig. 3 VBS UVLO vs. Temperature
Fig. 1 I
QCC
vs. Supply Voltage
Fig. 5 Rising/Falling Time vs. Temperature
Fig. 6 Output Sinking/Sourcing Current vs. Temperature
-40
-20
0
20
40
60
80
100
120
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
VB
S[
V]
AMBIENT TEMPERATURE
[
[
[
[
'C
]
]
]
]
FAN7361VBSSUV+
FAN7362VBSSUV+
FAN7361VBSSUV-
FAN7362VBSSUV-