2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FCH20N60 / FCA20N60 Rev. A
FC
H2
0N
6
0
/
FCA
2
0N
60
6
00V
N
-
Cha
nnel M
O
S
F
ET
SuperFET
TM
FCH20N60 / FCA20N60
600V N-Channel MOSFET
Features
650V @T
J
= 150C
Typ. R
DS(on)
= 0.15
Ultra low gate charge (typ. Q
g
= 75nC)
Low effective output capacitance (typ. C
oss
.eff = 165pF)
100% avalanche tested
Description
SuperFET
TM
is, Farichild's proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
Absolute Maximum Ratings
Thermal Characteristics
! "
!
!
!
"
"
"
! "
!
!
!
"
"
"
S
D
G
G
S
D
TO-247
G
S
D
TO-3P
Symbol
Parameter
FCH20N60
FCA20N60
Unit
V
DSS
Drain-Source Voltage
600
V
I
D
Drain Current
- Continuous (T
C
= 25
C)
- Continuous (T
C
= 100
C)
20
12.5
A
A
I
DM
Drain Current
- Pulsed
(Note 1)
60
A
V
GSS
Gate-Source voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
690
mJ
I
AR
Avalanche Current
(Note 1)
20
A
E
AR
Repetitive Avalanche Energy
(Note 1)
20.8
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
C)
- Derate above 25
C
208
1.67
W
W/
C
T
J,
T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds
300
C
Symbol
Parameter
Typ.
Max.
Unit
R
JC
Thermal Resistance, Junction-to-Case
--
0.6
C/W
R
CS
Thermal Resistance, Case-to-Sink
0.24
--
R
JA
Thermal Resistance, Junction-to-Ambient
--
41.7
C/W
2
www.fairchildsemi.com
FCH20N60 / FCA20N60 Rev. A
FC
H2
0N
6
0
/
FCA
2
0N
60
6
00V
N
-
Cha
nnel M
O
S
F
ET
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25C unless otherwise noted
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 20A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
C
3. I
SD
20A, di/dt
200A/
s, V
DD
BV
DSS
, Starting T
J
= 25
C
4. Pulse Test: Pulse width
300
s, Duty Cycle
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCH20N60
FCH20N60
TO-247
-
-
30
FCA20N60
FCA20N60
TO-3P
-
-
30
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
A, T
J
= 25
C
600
--
--
V
V
GS
= 0V, I
D
= 250
A, T
J
= 150
C
--
650
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
--
0.6
--
V/
C
BV
DS
Drain-Source Avalanche Breakdown
Voltage
V
GS
= 0V, I
D
= 20A
--
700
--
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, T
C
= 125
C
--
--
--
--
1
10
A
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30V, V
DS
= 0V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30V, V
DS
= 0V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
3.0
--
5.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 10A
--
0.15
0.19
g
FS
Forward Transconductance
V
DS
= 40V, I
D
= 10A
(Note 4)
--
17
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
2370
3080
pF
C
oss
Output Capacitance
--
1280
1665
pF
C
rss
Reverse Transfer Capacitance
--
95
--
pF
C
oss
Output Capacitance
V
DS
= 480V, V
GS
= 0V, f = 1.0MHz
--
65
85
pF
C
oss
eff.
Effective Output Capacitance
V
DS
= 0V to 400V, V
GS
= 0V
--
165
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 300V, I
D
= 20A
R
G
= 25
(Note 4, 5)
--
62
135
ns
t
r
Turn-On Rise Time
--
140
290
ns
t
d(off)
Turn-Off Delay Time
--
230
470
ns
t
f
Turn-Off Fall Time
--
65
140
ns
Q
g
Total Gate Charge
V
DS
= 480V, I
D
= 20A
V
GS
= 10V
(Note 4, 5)
--
75
98
nC
Q
gs
Gate-Source Charge
--
13.5
18
nC
Q
gd
Gate-Drain Charge
--
36
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
20
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
60
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 20A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0V, I
S
= 20A
dI
F
/dt =100A/
s
(Note 4)
--
530
--
ns
Q
rr
Reverse Recovery Charge
--
10.5
--
C
3
www.fairchildsemi.com
FCH20N60 / FCA20N60 Rev. A
FC
H2
0N
6
0
/
FCA
2
0N
60
6
00V
N
-
Cha
nnel M
O
S
F
ET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250
s Pulse Test
2. T
C
= 25
C
I
D
,
D
r
a
i
n C
u
r
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
0
10
1
10
2
Note
1. V
DS
= 40V
2. 250
s Pulse Test
-55
C
150
C
25
C
I
D
, D
r
a
i
n
C
u
r
r
e
n
t
[A
]
V
GS
, Gate-Source Voltage [V]
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
0.0
0.1
0.2
0.3
0.4
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
C
R
DS(
O
N)
[
O
],
Dr
ai
n
-
Sou
r
c
e
On
-
R
esi
s
t
anc
e
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
0
10
1
10
2
25
C
150
C
Notes :
1. V
GS
= 0V
2. 250
s Pulse Test
I
DR
, Re
v
e
rs
e
Dra
i
n
Cu
rre
n
t
[A]
V
SD
, Source-Drain Voltage [V]
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
a
pa
ci
t
a
nc
e [
p
F]
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
Note : I
D
= 20A
V
GS
,
G
a
t
e
-
S
our
ce V
o
l
t
age [
V
]
Q
G
, Total Gate Charge [nC]
4
www.fairchildsemi.com
FCH20N60 / FCA20N60 Rev. A
FC
H2
0N
6
0
/
FCA
2
0N
60
6
00V
N
-
Cha
nnel M
O
S
F
ET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DS
S
,
(
N
or
m
a
l
i
ze
d)
Dr
ai
n-
S
o
ur
ce B
r
ea
kd
ow
n
V
o
l
t
a
g
e
T
J
, Junction Temperature [
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 20 A
R
DS
(
O
N)
,
(
N
or
mal
i
ze
d)
D
r
ai
n-
S
o
ur
ce
O
n
-
R
e
s
i
s
t
a
nc
e
T
J
, Junction Temperature [
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
Operation in This Area
is Limited by R
DS(on)
DC
10 ms
1 ms
100 us
Notes :
1. T
C
= 25
C
2. T
J
= 150
C
3. Single Pulse
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
5
10
15
20
25
I
D
, D
r
a
i
n
C
u
r
r
e
n
t [A
]
T
C
, Case Temperature [
C]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
JC
(t) = 0 .6 ? /W M a x.
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
JM
- T
C
= P
D M
* Z
JC
(t)
sin g le p u lse
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(
t
)
,
Th
er
mal
Re
sp
on
se
t
1
, S q u a re W a ve P u ls e D u ra tio n [s e c ]
t
1
P
DM
t
2
5
www.fairchildsemi.com
FCH20N60 / FCA20N60 Rev. A
FC
H2
0N
6
0
/
FCA
2
0N
60
6
00V
N
-
Cha
nnel M
O
S
F
ET
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=
L I
AS
2
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
I
D
t
p
E
AS
=
L I
AS
2
----
2
1
E
AS
=
L I
AS
2
----
2
1
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
L
I
D
I
D
t
p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
www.fairchildsemi.com
FCH20N60 / FCA20N60 Rev. A
FC
H2
0N
6
0
/
FCA
2
0N
60
6
00V
N
-
Cha
nnel M
O
S
F
ET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
DD
L
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
7
www.fairchildsemi.com
FCH20N60 / FCA20N60 Rev. A
FC
H2
0N
6
0
/
FCA
2
0N
60
6
00V
N
-
Cha
nnel M
O
S
F
ET
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
8
www.fairchildsemi.com
FCH20N60 / FCA20N60 Rev. A
FC
H2
0N
6
0
/
FCA
2
0N
60
6
00V
N
-
Cha
nnel M
O
S
F
ET
Mechanical Dimensions
(Continued)
15.60
0.20
4.80
0.20
13.60
0.20
9.60
0.20
2.00
0.20
3.00
0.20
1.00
0.20
1.40
0.20
3.20
0.10
3.80
0.20
13.90
0.20
3.50
0.20
16.50
0.30
12.76
0.20
19.90
0.20
23.40
0.20
18.70
0.20
1.50
+0.15
0.05
0.60
+0.15
0.05
5.45TYP
[5.45
0.30
]
5.45TYP
[5.45
0.30
]
TO-3P
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
9
www.fairchildsemi.com
FCH20N60 / FCA20N60 Rev. A
FC
H2
0N
6
0
/
FCA
2
0N
60
6
00V
N
-
Cha
nnel M
O
S
F
ET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FAST
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
IntelliMAXTM
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerEdgeTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UltraFET
UniFETTM
VCXTM
A
CExTM
ActiveArrayTM
BottomlessTM
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CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
Across the board. Around the world.TM
The Power Franchise
Programmable Active DroopTM
Rev. I15
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