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2005 Fairchild Semiconductor Corporation
1
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FCI7N60 Rev. A1
F
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SuperFET
TM
July 2005
FCI7N60
600V N-Channel MOSFET
Features
650V @T
J
= 150C
Typ. R
DS(on)
= 0.53
Ultra Low Gate Charge (typ. Q
g
= 25nC)
Low Effective Output Capacitance (typ. C
oss
eff. = 60pF)
100% Avalanche Tested
Description
SuperFET
TM
is, Farichild's proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
Absolute Maximum Ratings
Thermal Characteristics
S
D
G
G
S
D
Symbol
Parameter
FCI7N60
Unit
V
DSS
Drain-Source Voltage
600
V
I
D
Drain Current
- Continuous (T
C
= 25
C)
- Continuous (T
C
= 100
C)
7
4.4
A
A
I
DM
Drain Current
- Pulsed
(Note 1)
21
A
V
GSS
Gate-Source voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
230
mJ
I
AR
Avalanche Current
(Note 1)
7
A
E
AR
Repetitive Avalanche Energy
(Note 1)
8.3
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
C)
- Derate above 25
C
83
0.67
W
W/
C
T
J,
T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds
300
C
Symbol
Parameter
FCI7N60
Unit
R
JC
Thermal Resistance, Junction-to-Case
1.5
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
2
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FCI7N60 Rev. A1
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Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25C unless otherwise noted
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 3.5A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
C
3. I
SD
7A, di/dt 200A/s, V
DD
BV
DSS
, Starting T
J
= 25
C
4. Pulse Test: Pulse width
300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCI7N60
FCI7N60
I
2
-PAK
--
--
50
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
A, T
J
= 25
C
600
--
--
V
V
GS
= 0V, I
D
= 250
A, T
J
= 150
C
--
650
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.6
--
V/
C
BV
DS
Drain-Source Avalanche Breakdown
Voltage
V
GS
= 0V, I
D
= 7A
--
700
--
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, T
C
= 125
C
--
--
--
--
1
10
A
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30V, V
DS
= 0V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30V, V
DS
= 0V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
3.0
--
5.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 3.5A
--
0.53
0.6
g
FS
Forward Transconductance
V
DS
= 40V, I
D
= 3.5A
(Note 4)
--
6
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
710
920
pF
C
oss
Output Capacitance
--
380
500
pF
C
rss
Reverse Transfer Capacitance
--
34
--
pF
C
oss
Output Capacitance
V
DS
= 480V, V
GS
= 0V, f = 1.0MHz
--
22
29
pF
C
oss
eff.
Effective Output Capacitance
V
DS
= 0V to 400V, V
GS
= 0V
--
60
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 300V, I
D
= 7A
R
G
= 25
(Note 4, 5)
--
35
80
ns
t
r
Turn-On Rise Time
--
55
120
ns
t
d(off)
Turn-Off Delay Time
--
75
160
ns
t
f
Turn-Off Fall Time
--
32
75
ns
Q
g
Total Gate Charge
V
DS
= 480V, I
D
= 7A
V
GS
= 10V
(Note 4, 5)
--
23
30
nC
Q
gs
Gate-Source Charge
--
4.2
5.5
nC
Q
gd
Gate-Drain Charge
--
11.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
7
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
21
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 7A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0V, I
S
= 7A
dI
F
/dt =100A/
s
(Note 4)
--
360
--
ns
Q
rr
Reverse Recovery Charge
--
4.5
--
C
3
www.fairchildsemi.com
FCI7N60 Rev. A1
F
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250s Pulse Test
2. T
C
= 25C
I
D
,
D
r
a
i
n C
u
r
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
* Note
1. V
DS
= 40V
2. 250s Pulse Test
-55
C
150
C
25
C
I
D
, D
r
a
i
n
C
u
r
r
e
n
t
[A
]
V
GS
, Gate-Source Voltage [V]
0
5
10
15
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
GS
= 20V
V
GS
= 10V
* Note : T
J
= 25C
R
DS(ON)
[
],
Dr
ai
n
-
Sou
r
c
e
On
-
R
esi
s
t
anc
e
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
25
C
150
C
* Notes :
1. V
GS
= 0V
2. 250s Pulse Test
I
DR
, Re
v
e
rs
e
Dra
i
n
Cu
rre
n
t
[A]
V
SD
, Source-Drain Voltage [V]
10
-1
10
0
10
1
0
1000
2000
3000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
a
pa
ci
t
a
nc
e [
p
F]
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
25
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
* Note : I
D
= 7A
V
GS
,
G
a
t
e
-
S
our
ce V
o
l
t
age [
V
]
Q
G
, Total Gate Charge [nC]
4
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FCI7N60 Rev. A1
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Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 10. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DS
S
,
(
N
or
m
a
l
i
ze
d)
Dr
ai
n-
S
o
ur
ce B
r
ea
kd
ow
n
V
o
l
t
a
g
e
T
J
, Junction Temperature [
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 3.5 A
R
DS
(
O
N)
,
(
N
or
mal
i
ze
d)
D
r
ai
n-
S
o
ur
ce
O
n
-
R
e
s
i
s
t
a
nc
e
T
J
, Junction Temperature [C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
Operation in This Area
is Limited by R
DS(on)
DC
10 ms
1 ms
100 us
* Notes :
1. T
C
= 25C
2. T
J
= 150C
3. Single Pulse
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0.0
2.5
5.0
7.5
10.0
I
D
, D
r
a
i
n
C
u
r
r
e
n
t [A
]
T
C
, Case Temperature [C]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
* N o te s :
1 . Z
JC
(t) = 1 .5 C /W M ax.
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
JC
(t)
sin g le p u lse
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(
t
)
,
Th
er
mal
Re
sp
on
se
t
1
, S q u a re W a ve P u ls e D u ra tio n [s e c ]
t
1
P
DM
t
2
5
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FCI7N60 Rev. A1
F
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0 60
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Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=
L I
AS
2
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
I
D
t
p
E
AS
=
L I
AS
2
----
2
1
E
AS
=
L I
AS
2
----
2
1
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
L
I
D
I
D
t
p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
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FCI7N60 Rev. A1
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Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
DD
L
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
7
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FCI7N60 Rev. A1
F
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Mechanical Dimensions
9.90
0.20
2.40
0.20
4.50
0.20
1.27
0.10
1.47
0.10
(45
)
0.80
0.10
10.00
0.20
2.54 TYP
2.54 TYP
13.08
0.20
9.20
0.20
1.20
0.20
10.08
0.20
MAX13.40
MAX 3.00
(0.40)
(1.46)
(0.94)
1.30
+0.10
0.05
0.50
+0.10
0.05
I
2
-PAK
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
F
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FAST
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
IntelliMAXTM
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerEdgeTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UltraFET
UniFETTM
VCXTM
WireTM
ACExTM
ActiveArrayTM
BottomlessTM
Build it NowTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
Across the board. Around the world.TM
The Power Franchise
Programmable Active DroopTM
Rev. I16
8
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FCI7N60 Rev. A1
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