2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FCP16N60 REV. A
F
C
P16N60 600V N-Channel MOSFET
November 2005
SuperFET
TM
FCP16N60
600V N-Channel MOSFET
Features
650V @T
J
= 150C
Typ. Rds(on)=0.22
Ultra low gate charge (typ. Qg=55nC)
Low effective output capacitance (typ. Coss.eff=110pF)
100% avalanche tested
Description
SuperFET
TM
is, Fairchild's proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
TO-220
FCP Series
G
S
D
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FCP16N60
Unit
V
DSS
Drain-Source Voltage
600
V
I
D
Drain Current
- Continuous (T
C
= 25
C)
- Continuous (T
C
= 100
C)
16
10.1
A
A
I
DM
Drain Current
- Pulsed
(Note 1)
48
A
V
GSS
Gate-Source voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
450
mJ
I
AR
Avalanche Current
(Note 1)
16
A
E
AR
Repetitive Avalanche Energy
(Note 1)
16.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
C)
- Derate above 25
C
167
1.33
W
W/
C
T
J,
T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds
300
C
Thermal Characteristics
Symbol
Parameter
FCP16N60
Unit
R
JC
Thermal Resistance, Junction-to-Case
0.75
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
*Drain current limited by maximum junction temperature
2
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FCP16N60 REV. A
F
C
P16N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCP16N60
FCP16N60
TO-220
-
-
50
Electrical Characteristics
T
C
= 25C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
A, T
J
= 25
C
600
--
--
V
V
GS
= 0V, I
D
= 250
A, T
J
= 150
C
--
650
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.6
--
V/
C
BV
DS
Drain-Source Avalanche Breakdown
Voltage
V
GS
= 0V, I
D
= 16A
--
700
--
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, T
C
= 125
C
--
--
--
--
1
10
A
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30V, V
DS
= 0V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30V, V
DS
= 0V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
3.0
--
5.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 8A
--
0.22
0.26
g
FS
Forward Transconductance
V
DS
= 40V, I
D
= 8A
(Note 4)
--
11.5
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
1730
2250
pF
C
oss
Output Capacitance
--
960
1150
pF
C
rss
Reverse Transfer Capacitance
--
85
--
pF
C
oss
Output Capacitance
V
DS
= 480V, V
GS
= 0V, f = 1.0MHz
--
45
60
pF
C
oss
eff.
Effective Output Capacitance
V
DS
= 0V to 400V, V
GS
= 0V
--
110
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 300V, I
D
= 16A
R
G
= 25
(Note 4, 5)
--
42
85
ns
t
r
Turn-On Rise Time
--
130
270
ns
t
d(off)
Turn-Off Delay Time
--
165
340
ns
t
f
Turn-Off Fall Time
--
90
190
ns
Q
g
Total Gate Charge
V
DS
= 480V, I
D
= 16A
V
GS
= 10V
(Note 4, 5)
--
55
70
nC
Q
gs
Gate-Source Charge
--
10.5
13
nC
Q
gd
Gate-Drain Charge
--
28
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
16
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
48
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 16A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0V, I
S
= 16A
dI
F
/dt =100A/
s
(Note 4)
--
435
--
ns
Q
rr
Reverse Recovery Charge
--
7.0
--
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 8A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
C
3. I
SD
16A, di/dt 200A/s, V
DD
BV
DSS
, Starting T
J
= 25
C
4. Pulse Test: Pulse width
300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
3
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FCP16N60 REV. A
F
C
P16N60 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250
S Pulse Test
2. T
C
= 25
C
I
D
, D
r
ai
n C
u
r
r
e
nt
[
A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
0
10
1
10
2
Note
1. V
DS
= 40V
2. 250
s Pulse Test
-55C
150C
25C
I
D
,
Dr
ain C
u
rr
ent
[
A
]
V
GS
, Gate-Source Voltage [V]
0
5
10
15
20
25
30
35
40
45
50
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25 C
R
DS(
O
N)
[
O
],
D
r
ai
n
-
S
o
u
r
ce O
n
-
R
esi
s
t
ance
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
0
10
1
10
2
25
C
150
C
Notes :
1. V
GS
= 0V
2. 250 s Pulse Test
I
DR
,
R
e
ver
s
e D
r
ai
n C
u
r
r
e
nt
[
A
]
V
SD
, Source-Drain Voltage [V]
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
7000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
apaci
t
ance [
p
F]
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
60
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 480V
Note : I
D
= 16A
V
GS
,
G
a
te-
S
our
ce V
o
l
t
ag
e
[
V
]
Q
G
, Total Gate Charge [nC]
4
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FCP16N60 REV. A
F
C
P16N60 600V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DSS
, (N
orm
a
l
i
ze
d)
D
r
a
i
n-Source Br
e
a
kdown V
o
l
t
a
g
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 8 A
R
DS
(ON
)
, (No
r
ma
lize
d
)
D
r
ai
n
-
S
ource O
n
-R
esi
s
t
anc
e
T
J
, Junction Temperature [
o
C]
25
50
75
100
125
150
0
5
10
15
20
I
D
,
Drain
C
u
rre
nt [A
]
T
C
, Case Temperature [C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10 us
Operation in This Area
is Limited by R
DS(on)
DC
1 ms
100 us
? Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drain
Curr
e
n
t [A
]
V
DS
, Drain-Source Voltage [V]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
? N o te s :
1 . Z
? J C
(t) = 0 .7 5 ? /W M a x.
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
? J C
(t)
sin g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
?J
C
(
t
)
,
Ther
mal
R
e
s
ponse
t
1
, S q u a re W a ve P u ls e D u ra tio n [s e c ]
t
1
P
DM
t
2
5
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FCP16N60 REV. A
F
C
P16N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
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FCP16N60 REV. A
F
C
P16N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
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FCP16N60 REV. A
F
C
P16N60 600V N-Channel MOSFET
Mechanical Dimensions
4.50
0.20
9.90
0.20
1.52
0.10
0.80
0.10
2.40
0.20
10.00
0.20
1.27
0.10
3.60
0.10
(8.70)
2.80
0.10
15.90
0.20
10.08
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
)
9.20
0.20
13.08
0.20
1.30
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
TO-220
Dimensions in Millimeters
8
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FCP16N60 REV. A
F
C
P16N60 600V N-Channel MOSFET
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PRODUCT STATUS DEFINITIONS
Definition of Terms
ACExTM
ActiveArrayTM
BottomlessTM
Build it NowTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
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FASTrTM
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HiSeCTM
I
2
CTM
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POPTM
Power247TM
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QSTM
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SMART STARTTM
SPMTM
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SuperSOTTM-8
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Across the board. Around the world.TM
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Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17
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