2003 Fairchild Semiconductor Corporation
August 2003
FDH15N50 / FDP15N50 / FDB15N50 RevD2
FDH15N50 / FD
P
15N50 / FD
B15
N
5
0
FDH15N50 / FDP15N50 / FDB15N50
15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET
Applications
Switch Mode Power Supplies(SMPS), such as
PFC Boost
Two-Switch Forward Converter
Single Switch Forward Converter
Flyback Converter
Buck Converter
High Speed Switching
Features
Low Gate Charge Q
g
results in Simple Drive
Requirement
Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness
Reduced r
DS(ON)
Reduced Miller Capacitance and Low Input Capacitance
Improved Switching Speed with Low EMI
175C Rated Junction Temperature
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
Ratings
Units
V
DSS
Drain to Source Voltage
500
V
V
GS
Gate to Source Voltage
30
V
I
D
Drain Current
15
A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
11
A
Pulsed
1
60
A
P
D
Power dissipation
Derate above 25
o
C
300
2
W
W/
o
C
T
J
, T
STG
Operating and Storage Temperature
-55 to 175
o
C
Soldering Temperature for 10 seconds
300 (1.6mm from case)
o
C
R
JC
Thermal Resistance Junction to Case
0.50
o
C/W
R
JA
Thermal Resistance Junction to Ambient (TO-247)
40
o
C/W
R
JA
Thermal Resistance Junction to Ambient (TO-220, TO-263)
62
o
C/W
D
G
S
DRAIN
(FLANGE)
Package
Symbol
DRAIN
SOURCE
GATE
DRAIN
SOURCE
GATE
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
TO-247
FDH SERIES
DRAIN
(BOTTOM)
2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 RevD2
FDH15N50 / FD
P
15N50 / FD
B15
N
5
0
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25C (unless otherwise noted)
Statics
Dynamics
Avalanche Characteristics
Drain-Source Diode Characteristics
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting T
J
= 25C, L = 7.0mH, I
AS
= 15A
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDH15N50
FDH15N50
TO-247
Tube
-
30
FDP15N50
FDP15N50
TO-220
Tube
-
50
FDB15N50
FDB15N50
TO-263
330mm
24mm
800
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250A, V
GS
= 0V
500
-
-
V
B
VDSS
/
T
J
Breakdown Voltage Temp. Coefficient
Reference to 25
o
C,
ID = 1mA
-
0.58
-
V/C
r
DS(ON)
Drain to Source On-Resistance
V
GS
= 10V, I
D
= 7.5A
-
0.33
0.38
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2.0
3.4
4.0
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 500V
T
C
= 25
o
C
-
-
25
A
V
GS
= 0V
T
C
= 150
o
C
-
-
250
I
GSS
Gate to Source Leakage Current
V
GS
= 30V
-
-
100
nA
g
fs
Forward Transconductance
V
DD
= 10V, I
D
= 7.5A
10
-
-
S
Q
g(TOT)
Total Gate Charge at 10V
V
GS
= 10V,
V
DS
= 400V,
I
D
= 15A
-
33
41
nC
Q
gs
Gate to Source Gate Charge
-
7.2
10
nC
Q
gd
Gate to Drain "Miller" Charge
-
12
16
nC
t
d(ON)
Turn-On Delay Time
V
DD
= 250V,
I
D
= 15A,
R
G
= 6.2
,
R
D
= 17
-
9
-
ns
t
r
Rise Time
-
5.4
-
ns
t
d(OFF)
Turn-Off Delay Time
-
26
-
ns
t
f
Fall Time
-
5
-
ns
C
ISS
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
1850
-
pF
C
OSS
Output Capacitance
-
230
-
pF
C
RSS
Reverse Transfer Capacitance
-
16
-
pF
E
AS
Single Pulse Avalanche Energy
2
760
-
-
mJ
I
AR
Avalanche Current
-
-
15
A
I
S
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
-
-
15
A
I
SM
Pulsed Source Current
1
(Body Diode)
-
-
60
A
V
SD
Source to Drain Diode Voltage
I
SD
= 15A
-
0.86
1.2
V
t
rr
Reverse Recovery Time
I
SD
= 15A, di
SD
/dt = 100A/s
-
470
730
ns
Q
RR
Reverse Recovered Charge
I
SD
= 15A, di
SD
/dt = 100A/s
-
5
6.6
C
D
G
S
2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 RevD2
FDH15N50 / FD
P
15N50 / FD
B15
N
5
0
Typical Characteristics
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. Normalized Drain To Source On
Resistance vs Junction Temperature
Figure 5. Capacitance vs Drain To Source
Voltage
Figure 6. Gate Charge Waveforms For Constant
Gate Current
1
10
100
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN
T
O
SOUR
CE
CURRENT
(
A
)
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
V
GS
DESCENDING
10V
6.5V
6V
5.5V
5V
4.5V
T
J
= 25
o
C
1
10
100
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN T
O
SOURCE CURR
E
N
T
(
A
)
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
V
GS
DESCENDING
10V
6V
5.5V
5V
4.5V
4V
T
J
= 175
o
C
0
10
20
30
40
50
60
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
I
D
,
DRAIN CUR
RE
NT
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
TJ = 25
o
C
TJ = 175
o
C
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
VDD = 100V
NO
RM
AL
IZ
ED ON RESIST
A
NCE
TJ, JUNCTION TEMPERATURE (
o
C)
0
0.5
1.0
1.5
2.0
2.5
3.5
-50
-25
0
25
50
75
100
150
175
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 7.5A
125
3.0
10
100
1000
4000
1
10
100
C, CAP
A
C
IT
ANCE (
p
F
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
0
3
6
12
15
0
10
20
30
40
V
GS
, G
A
T
E
T
O
SOURCE V
O
L
T
A
G
E
(
V
)
Qg, GATE CHARGE (nC)
I
D
= 15A
9
50
250V
400V
100V
2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 RevD2
FDH15N50 / FD
P
15N50 / FD
B15
N
5
0
Figure 7. Body Diode Forward Voltage vs Body
Diode Current
Figure 8. Maximum Safe Operating Area
Figure 9. Maximum Drain Current vs Case
Temperature
Figure 10. Unclamped Inductive Switching
Capability
Figure 11. Normalized Transient Thermal Impedance, Junction to Case
Typical Characteristics
0
5
10
15
20
25
30
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
SD
,
SOURCE T
O
DRAIN CU
RRE
N
T
(
A
)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
T
J
= 175
o
C
T
J
= 25
o
C
0.1
1.0
10
100
I
D
,
DRAIN CURRENT
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
1000
OPERATION IN THIS AREA
LIMITED BY R
DS(ON)
T
C
= 25
o
C
1ms
DC
10ms
100s
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAI
N CURRENT
(
A
)
0
4
8
12
16
25
50
75
100
125
175
150
1
10
50
0.01
0.1
1
50
10
t
AV
, TIME IN AVALANCHE (ms)
I
AS
, A
V
AL
ANCHE C
URRENT
(
A
)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
1
, RECTANGULAR PULSE DURATION (s)
Z
JC
,
N
O
R
M
A
LI
ZED
T
H
E
R
M
A
L
R
ESP
O
N
SE
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (PD X Z
JC
X R
JC
) + T
C
SINGLE PULSE
0.20
0.50
0.10
0.05
0.02
0.01
10
-1
10
-2
2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 RevD2
FDH15N50 / FD
P
15N50 / FD
B15
N
5
0
Test Circuits and Waveforms
Figure 12. Unclamped Energy Test Circuit
Figure 13. Unclamped Energy Waveforms
Figure 14. Gate Charge Test Circuit
Figure 15. Gate Charge Waveforms
Figure 16. Switching Time Test Circuit
Figure 17. Switching Time Waveform
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
V
DD
Q
g(TH)
V
GS
= 1V
Q
g(TOT)
V
GS
= 10V
V
DS
V
GS
I
g(REF)
0
0
Q
gs
Q
gd
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
Rev. I3
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intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACExTM
ActiveArrayTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
ImpliedDisconnect
TM
ISOPLANARTM
LittleFETTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSX
TM
MSXPro
TM
OCX
TM
OCXPro
TM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigure
TM
RapidConnect
TM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
TruTranslationTM
UHCTM
UltraFET
VCXTM
Across the board. Around the world.
TM
The Power FranchiseTM
Programmable Active DroopTM
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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