August 1997
FDC6303N
Digital FET, Dual N-Channel
General Description
Features
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
FDC6303N
Units
V
DSS
Drain-Source Voltage
25
V
V
GSS
Gate-Source Voltage
8
V
I
D
Drain Current
- Continuous
0.68
A
- Pulsed
2
P
D
Maximum Power Dissipation
(Note 1a)
0.9
W
(Note 1b)
0.7
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6.0
kV
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
140
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
60
C/W
FDC6303N Rev.C
25 V, 0.68 A continuous, 2 A Peak.
R
DS(ON)
= 0.6
@ V
GS
= 2.7 V
R
DS(ON)
= 0.45
@ V
GS
= 4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
GS(th)
< 1.5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple NPN digital transistors (IMHxA series)
with one DMOS FET.
These dual N-Channel logic level enhancement mode field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance. This device has been designed especially for
low voltage applications as a replacement for digital
transistors in load switching applications. Since bias
resistors are not required this one N-Channel FET can
replace several digital transistors with different bias
resistors like the IMHxA series.
1
5
3
2
4
6
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
Mark: .303
1997 Fairchild Semiconductor Corporation
DMOS Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
25
V
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
I
D
= 250 A, Referenced to 25
o
C
26
mV /
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 20 V, V
GS
= 0 V
1
A
T
J
= 55C
10
A
I
GSS
Gate - Body Leakage Current
V
GS
= 8 V, V
DS
= 0 V
100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
/
T
J
Gate Threshold Voltage Temp.Coefficient
I
D
= 250 A, Referenced to 25
o
C
-2.6
mV /
o
C
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
0.65
0.8
1.5
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 0.5 A
0.33
0.45
T
J
=125C
0.52
0.8
V
GS
= 2.7 V, I
D
= 0.2 A
0.44
0.6
I
D(ON)
On-State Drain Current
V
GS
= 2.7 V, V
DS
= 5 V
0.5
A
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 0.5 A
1.45
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
50
pF
C
oss
Output Capacitance
28
pF
C
rss
Reverse Transfer Capacitance
9
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= 6 V, I
D
= 0.5 A,
V
GS
= 4.5 V, R
GEN
= 50
3
6
ns
t
r
Turn - On Rise Time
8.5
18
ns
t
D(off)
Turn - Off Delay Time
17
30
ns
t
f
Turn - Off Fall Time
13
25
ns
Q
g
Total Gate Charge
V
DS
= 5 V, I
D
= 0.5 A,
V
GS
= 4.5 V
1.64
2.3
nC
Q
gs
Gate-Source Charge
0.38
nC
Q
gd
Gate-Drain Charge
0.45
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Source Current
0.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.5 A
(Note 2)
0.83
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by
design while R
CA
is determined by the user's board design. R
JA
shown below for single device operation on FR-4 in still air.
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
FDC6303N Rev.C
b. 180
O
C/W on a 0.005 in
2
of pad
of 2oz copper.
a. 140
O
C/W on a 0.125 in
2
pad of
2oz copper.
FDC6303N Rev.C
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature
.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
Figure 4. On Resistance
Variation with
Gate-To- Source Voltage.
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 4.5 V
GS
I =0.5 A
D
R , NORMALIZED
DS(ON)
0
0.5
1
1.5
2
0
0.3
0.6
0.9
1.2
1.5
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
3.5
2.7
2.5
2.0
1.5
DS
D
V = 4.5V
GS
3.0
R
DS(on
)
, NORMALIZED
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 2.0V
GS
2.7
3.0
4.5
D
3.5
2.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.4
0.8
1.2
1.6
2
V , GATE TO SOURCE VOLTAGE (V)
ID= 0.5A
GS
R , ON-RESISTANCE (OHM)
DS(on)
125C
25C
0
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25C
125C
V = 5.0V
DS
GS
D
T = -55C
J
0
0.2
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125C
J
25C
-55C
V = 0V
GS
SD
S
FDC6303N Rev.C
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical And Thermal Characteristics
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 0.5A
D
10V
15V
V = 5V
DS
0.1
0.2
0.5
1
2
5
10
20
40
0.01
0.03
0.1
0.3
1
5
V , DRAI N-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 4.5V
SINGLE PULSE
R = See note 1b
T = 25C
GS
JA
DS
D
DC
1s
10ms
100ms
RDS(ON) LIMIT
A
1ms
100s
0.0001
0.001
0.01
0.1
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r(t), NORMALIZED EFFECTIVE
Duty Cycle, D = t / t
1
2
R (t) = r(t) * R
R = See Note 1b
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
0.1
0.5
1
2
5
10
25
5
10
20
50
100
150
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C rss
0.01
0.1
1
10
100
300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =See note 1b
T = 25C
JA
A
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