February 2001
2001 Fairchild Semiconductor Corporation
FDD3680 Rev B1(W)
FDD3680
100V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
25 A, 100 V. R
DS(ON)
= 46 m
@ V
GS
= 10 V
R
DS(ON)
= 51 m
@ V
GS
= 6 V
Low gate charge (38 nC typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability.
G
S
D
TO-252
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
100
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current Continuous
(Note 1)
25
A
Drain Current Pulsed
100
Maximum Power Dissipation
(Note 1)
68
(Note 1a)
3.8
P
D
(Note 1b)
1.6
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +175
C
Thermal Characteristics
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
2.2
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD3680
FDD3680
13''
16mm
2500 units
FDD3680
FDD3680 Rev B1(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
V
DD
= 50 V,
I
D
= 6.1 A
245
mJ
I
AR
Maximum Drain-Source
Avalanche Current
6.1
A
Off Characteristics
BV
DSS
DrainSource Breakdown
Voltage
V
GS
= 0 V,
I
D
= 250
A
100
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
101
mV/
C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 80 V,
V
GS
= 0 V
10
A
I
GSSF
GateBody Leakage, Forward
V
GS
= 20 V,
V
DS
= 0 V
100
nA
I
GSSR
GateBody Leakage, Reverse
V
GS
= 20 V
V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250
A
2
2.4
4
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
6.5
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V,
I
D
= 6.1 A
V
GS
= 10 V,
I
D
= 6.1 A, T
J
= 125
C
V
GS
= 6 V,
I
D
= 5.8 A
32
61
34
46
92
51
m
I
D(on)
OnState Drain Current
V
GS
= 10 V,
V
DS
= 5 V
25
A
g
FS
Forward Transconductance
V
DS
= 5 V,
I
D
= 6.1 A
25
S
Dynamic Characteristics
C
iss
Input Capacitance
1735
pF
C
oss
Output Capacitance
176
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 50 V,
V
GS
= 0 V,
f = 1.0 MHz
53
pF
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
14
25
ns
t
r
TurnOn Rise Time
8.5
17
ns
t
d(off)
TurnOff Delay Time
63
94
ns
t
f
TurnOff Fall Time
V
DD
= 50 V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 10
21
34
ns
Q
g
Total Gate Charge
38
53
nC
Q
gs
GateSource Charge
8.1
nC
Q
gd
GateDrain Charge
V
DS
= 50 V,
I
D
= 6.1 A,
V
GS
= 10 V
9.2
nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
2.9
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 2.9 A
(Note 2)
0.73
1.3
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) R
JA
= 40oC/ W when
mounted on a 1in2 pad of
2oz copper.
b) R
JA
= 96oC/W on a
minimum mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDD3680
FDD3680 Rev B1(W)
Typical Characteristics
0
10
20
30
40
0
2
4
6
V
D S
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
= 10V
4.5V
5V
3.5V
4V
0.8
1
1.2
1.4
1.6
1.8
0
10
20
30
40
50
60
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
=4.0V
10V
5.0V
4.5V
6.0
V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
0.6
1
1.4
1.8
2.2
2.6
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 6.1A
V
GS
= 10V
0
0.04
0.08
0.12
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 3.0A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
1
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
=5V
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD3680
FDD3680 Rev B1(W)
Typical Characteristics
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 6.1A
V
D S
= 15V
30V
50V
0
500
1000
1500
2000
2500
3000
0
20
40
60
80
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0
V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
10ms
1ms
100
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
J A
= 96
o
C/W
T
A
= 25
o
C
0
10
20
30
40
0.1
1
10
100
1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
J A
= 96C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
JA
(t) = r(t) + R
JA
R
JA
= 96C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD3680
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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