FDD6670A
FDD6670A, Rev. C
FDD6670A
N-Channel, Logic Level, PowerTrench
MOSFET
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
DC/DC converter
Motor drives
February 2000
Features
66 A, 30 V. R
DS(on)
= 0.008
@ V
GS
= 10 V
R
DS(on)
= 0.010
@ V
GS
= 4.5 V.
Low gate charge (35nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(on)
.
2000 Fairchild Semiconductor Corporation
G
S
D
TO-252
S
D
G
Absolute Maximum Ratings
T
C
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Maximum Drain Current -Continuous
(Note 1)
66
T
A
= 25
o
C
(Note 1a)
15
Maximum Drain Current -Pulsed
100
A
Maximum Power Dissipation T
C
= 25
o
C
(Note 1)
70
T
A
= 25
o
C
(Note 1a)
3.2
P
D
T
A
= 25
o
C
(Note 1b)
1.3
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
1.8
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
C/W
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD6670A
FDD6670A
13''
16mm
2500
FDD6670A
FDD6670A, Rev. C
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Avalanche ratings
(Note 2)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
V
DD
= 15 V, I
D
= 66 A
400
mJ
I
AR
Maximum Drain-Source Avalanche Current
66
A
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250
A
30
V
BV
DSS
T
J
Breakdown Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
25
mV/
C
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 24 V, V
GS
= 0 V
1
A
I
GSSF
Gate-Body Leakage Current,
Forward
V
GS
= 20V, V
DS
= 0 V
100
nA
I
GSSR
Gate-Body Leakage Current,
Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
1
1.6
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
-4
mV/
C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 15 A,T
J
=125
C
V
GS
= 4.5 V, I
D
=13 A
0.0065
0.0090
0.0085
0.008
0.013
0.010
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 5 V
50
A
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 12 A
55
S
Dynamic Characteristics
C
iss
Input Capacitance
3200
pF
C
oss
Output Capacitance
820
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
400
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
15
27
ns
t
r
Turn-On Rise Time
15
27
ns
t
d(off)
Turn-Off Delay Time
85
105
ns
t
f
Turn-Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
42
68
ns
Q
g
Total Gate Charge
35
50
nC
Q
gs
Gate-Source Charge
9
nC
Q
gd
Gate-Drain Charge
V
DS
= 15 V, I
D
= 15 A,
V
GS
= 5 V,
16
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
2.3
A
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.3 A
(Note 2)
0.72
1.2
V
a) R
JA
= 40oC/W when mounted
on a 1in2 pad of 2oz copper.
b) R
JA
= 96oC/W when mounted
on a minimum pad .
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
FDD6670A
FDD6670A, Rev. C
Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
,
N
O
RMALI
Z
E
D
DRAI
N-
S
O
URC
E
O
N
-RE
S
I
S
T
A
NCE
V
GS
= 3.0V
10V
4.0V
3.5V
4.5V
6.0V
0
0.005
0.01
0.015
0.02
0.025
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N
)
, O
N
-
R
E
S
I
S
T
ANCE
(
O
HM)
I
D
= 8 A
T
A
= 125
o
C
T
A
= 25
o
C
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
,
N
O
RM
AL
I
Z
E
D
D
R
A
I
N
-
S
O
UR
CE
O
N
-
R
E
S
I
S
T
AN
CE
I
D
= 15A
V
GS
= 10V
0
10
20
30
40
50
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DR
AI
N-
S
O
UR
CE
C
URR
E
N
T
(
A
)
V
GS
= 10V
3.0V
4.5V
3.5V
0
10
20
30
40
50
60
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
D
RAI
N
C
URR
E
N
T
(
A
)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
RE
V
E
RS
E
DR
AI
N
CURRE
NT (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDD6670A
FDD6670A, Rev. C
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient themal response will change depending on the circuit board design.
0
2
4
6
8
10
0
10
20
30
40
50
60
70
Q
g
, GATE CHARGE (nC)
V
GS
,
G
A
TE
-
S
O
URCE
V
O
LTAG
E
(V
)
I
D
= 15A
V
DS
= 5V
10V
15V
0
1000
2000
3000
4000
5000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACI
TANCE
(pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRA
I
N
CURRE
NT (A
)
DC
10s
1s
100ms
100
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
1ms
0
50
100
150
200
0.001
0.01
0.1
1
10
100
t
1
, TIME (sec)
P(
p
k
)
,
PE
A
K
T
R
A
N
SI
EN
T
POW
E
R
(
W
)
SINGLE PULSE
R
JA
= 96 C/W
T
A
= 25C
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(t),
N
O
R
M
A
L
I
Z
E
D
E
FFE
C
T
I
V
E
TRANS
IE
N
T
THE
R
M
A
L
RE
S
I
S
T
ANCE
R
JA
(t) = r(t) + R
JA
R
JA
= 96 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
D-PAK (TO-252) Packaging
Configuration: Figure 1.0
Components
TO-252 (D-PAK) Tape Leader and
Trailer Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
D-PAK (TO-252) Packaging Information
Standard
(no flow code)
Packaging type
Reel Size
TNR
13" Dia
Qty per Reel/Tube/Bag
2,500
Box Dimension (mm)
359x359x57
Max qty per Box
5,000
Weight per unit (gm)
0.300
Weight per Reel(kg)
1.200
ESD Label
F63TNR Label
359mm x 359mm x 57mm
Standard Intermediate box
D-PAK (TO-252) Unit Orientation
FDD
6680
FZ9
93
5
F63TNR Label sample
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Antistatic Cover Tape
ESD Label
EL ECT RO ST AT IC
SEN SIT IVE DEVI CES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
LOT: CBVK741B019
FSID: FDD6680
D/C1: Z9942 QTY1:
SPEC REV:
SPEC:
QTY: 2500
D/C2:
QTY2:
CPN:
N/F: F (F63TNR)3
Packaging Description:
TO-252 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). This and some other options are further
described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
FDD
6680
FZ9
93
5
FDD
6680
FZ9
93
5
FDD
6680
FZ9
93
5
Leader Tape
1680mm minimum or
210 empty pockets
Trailer Tape
640mm minimum or
80 empty pockets
TO-252 Tape and Reel Data and Package Dimensions
July 1999, Rev. A
TO-252 Tape and Reel Data and Package Dimensions
July 1999, Rev. A
P1
A0
D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
164mm
13" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.646 +0.078/-0.000
16.4 +2/0
0.882
22.4
0.626 0.764
15.9 19.4
See detail AA
Dim A
max
13" Diameter Option
Dim A
Max
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum component rotation
0.9mm
maximum
0.9mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
10 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
D-PAK (TO-252) Embossed Carrier
Tape Configuration: Figure 3.0
D-PAK (TO-252) Reel
Configuration: Figure 4.0
Dimensions are in millimeter
Pkg type
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
TO252
(24mm)
6.90
+/-0.10
10.50
+/-0.10
16.0
+/-0.3
1.55
+/-0.05
1.5
+/-0.10
1.75
+/-0.10
14.25
min
7.50
+/-0.10
8.0
+/-0.1
4.0
+/-0.1
2.65
+/-0.10
0.30
+/-0.05
13.0
+/-0.3
0.06
+/-0.02
TO-252 (FS PKG Code AA)
TO-252 Tape and Reel Data and Package Dimensions
September 1999, Rev. A
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.300
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
SyncFETTM
TinyLogicTM
UHCTM
VCXTM
ISOPLANARTM
MICROWIRETM
POPTM
PowerTrench
QFETTM
QSTM
Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
Rev. D
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