September 2001
2001 Fairchild Semiconductor Corporation
FDD6670S Rev E(W)
FDD6670S
30V N-Channel PowerTrench
SyncFET
TM
General Description
The FDD6670S is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDD6670S includes
an integrated Schottky diode using Fairchild's
monolithic SyncFET technology. The performance of
the FDD6670S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDD6670A in parallel with a Schottky diode.
Applications
DC/DC converter
Motor Drives
Features
64 A, 30 V
R
DS(ON)
= 9 m
@ V
GS
= 10 V
R
DS(ON)
= 12.5 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (17nC typical)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
.
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current Continuous
(Note 3)
64
A
Pulsed
(Note 1a)
100
Power Dissipation
(Note 1)
70
(Note 1a)
3.2
P
D
(Note 1b)
1.3
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
1.8
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD6670S
FDD6670S
13''
16mm
2500 units
FDD6670S
FDD6670S Rev E (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
Single Pulse, V
DD
= 15 V, I
D
=14A
245
mJ
I
AR
Drain-Source Avalanche Current
14
A
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V, I
D
= 1 mA
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 10 mA, Referenced to 25
C
19
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V,
V
GS
= 0 V
500
A
I
GSSF
GateBody Leakage, Forward
V
GS
= 20 V,
V
DS
= 0 V
100
nA
I
GSSR
GateBody Leakage, Reverse
V
GS
= 20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
1
2
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 10 mA, Referenced to 25
C
3.3
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V,
I
D
= 13.8 A
V
GS
= 4.5 V,
I
D
= 11.7 A
V
GS
= 10 V, I
D
= 13.8A, T
J
= 125
C
6
9
10
9
12.5
15
m
I
D(on)
OnState Drain Current
V
GS
= 10 V,
V
DS
= 5 V
50
A
g
FS
Forward Transconductance
V
DS
= 15 V,
I
D
= 13.8 A
27
S
Dynamic Characteristics
C
iss
Input Capacitance
2010
pF
C
oss
Output Capacitance
526
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V,
V
GS
= 0 V,
f = 1.0 MHz
186
pF
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
10
18
ns
t
r
TurnOn Rise Time
10
18
ns
t
d(off)
TurnOff Delay Time
34
55
ns
t
f
TurnOff Fall Time
V
DS
= 15 V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
14
23
ns
Q
g
Total Gate Charge
17
24
nC
Q
gs
GateSource Charge
6.2
nC
Q
gd
GateDrain Charge
V
DS
= 15 V,
I
D
= 13.8 A,
V
GS
= 10 V
5.5
nC
DrainSource Diode Characteristics
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 3.5 A
(Note 2)
V
GS
= 0 V, I
S
= 7 A
(Note 2)
0.49
0.56
0.7
V
t
rr
Diode Reverse Recovery Time
20
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 3.5 A,
d
iF
/d
t
= 300 A/s
(Note 3)
19.7
nC
FDD6670S
FDD6670S Rev E (W)
D
R
P
DS(ON)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) R
JA
= 40C/W when mounted on a
1in
2
pad of 2 oz copper
b) R
JA
= 96C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where P
D
is maximum power dissipation at T
C
= 25C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
FDD6670S
FDD6670S Rev E (W)
Typical Characteristics
0
10
20
30
40
50
0
0.5
1
1.5
2
V
D S
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
4.5V
4.0V
3.5V
V
GS
= 10V
6.0V
3.0V
0.6
1
1.4
1.8
2.2
2.6
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.5V
6.0V
10V
4.0V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 13.5A
V
GS
= 10V
0.005
0.01
0.015
0.02
0.025
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 6.8A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
70
2
2.5
3
3.5
4
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
0
0.1
0.2
0.3
0.4
0.5
0.6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FD
D
6670S
FDD6670S Rev E (W)
Typical Characteristics
(continued)
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
45
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
=13.5A
V
D S
= 5V
15V
10V
0
600
1200
1800
2400
3000
3600
0
5
10
15
20
25
30
V
D S
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
1 0
1 0 0
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
1 0 s
1s
100ms
1 0 0
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JA
= 96C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 96 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FD
D
6670S
FDD6670S Rev E (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild's SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDD6670S.
Figure 12. FDD6670S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDD6670A).
Figure 13. Non-SyncFET (FDD6670A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
I
DSS
, REVERSE LEAKAGE CURRENT (A)
100
o
C
25
o
C
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
FD
D
6670S
Time: 10.0ns/div
Current
:
0.8A/div
Time: 10.0ns/div
Current
:
0.8A/div
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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