2004 Fairchild Semiconductor Corporation
September 2004
FDD8896 / FDU8896 Rev. C
F
D
D
8
8
9
6
/
F
D
U
8
8
9
6
FDD8896 / FDU8896
N-Channel PowerTrench
MOSFET
30V, 94A, 5.7m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Applications
DC/DC converters
Features
r
DS(ON)
= 5.7m
, V
GS
= 10V, I
D
= 35A
r
DS(ON)
= 6.8m
, V
GS
= 4.5V, I
D
= 35A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
MOSFET Maximum Ratings
T
C
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain to Source Voltage
30
V
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current
94
A
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V) (Note 1)
85
A
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
JA
= 52
o
C/W)
17
A
Pulsed
Figure 4
A
E
AS
Single Pulse Avalanche Energy (Note 2)
168
mJ
P
D
Power dissipation
80
W
Derate above 25
o
C
0.53
W/
o
C
T
J
, T
STG
Operating and Storage Temperature
-55 to 175
o
C
R
JC
Thermal Resistance Junction to Case TO-252, TO-251
1.88
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-252, TO-251
100
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
52
o
C/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD8896
FDD8896
TO-252AA
13"
12mm
2500 units
FDU8896
FDU8896
TO-251AA
Tube
N/A
75 units
D
G
S
G D S
I-PAK
(TO-251AA)
G
S
D
TO-252
D-PAK
(TO-252)
2004 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C
F
D
D
8
8
9
6
/
F
D
U
8
8
9
6
Electrical Characteristics
T
C
= 25C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 10V)
Drain-Source Diode Characteristics
Notes:
1: Package current limitation is 35A.
2: Starting T
J
= 25C, L = 0.43mH, I
A S
= 28A, V
DD
= 27V, V
GS
= 10V.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
A, V
GS
= 0V
30
-
-
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V
-
-
1
A
V
GS
= 0V
T
C
= 150
o
C
-
-
250
I
GSS
Gate to Source Leakage Current
V
GS
=
20V
-
-
100
nA
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
1.2
-
2.5
V
r
DS(ON)
Drain to Source On Resistance
I
D
= 35A, V
GS
= 10V
-
0.0047 0.0057
I
D
= 35A, V
GS
= 4.5V
-
0.0057 0.0068
I
D
= 35A, V
GS
= 10V,
T
J
= 175
o
C
-
0.0075 0.0092
C
ISS
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
2525
-
pF
C
OSS
Output Capacitance
-
490
-
pF
C
RSS
Reverse Transfer Capacitance
-
300
-
pF
R
G
Gate Resistance
V
GS
= 0.5V, f = 1MHz
-
2.1
-
Q
g(TOT)
Total Gate Charge at 10V
V
GS
= 0V to 10V
V
DD
= 15V
I
D
= 35A
I
g
= 1.0mA
-
46
60
nC
Q
g(5)
Total Gate Charge at 5V
V
GS
= 0V to 5V
-
24
32
nC
Q
g(TH)
Threshold Gate Charge
V
GS
= 0V to 1V
-
2.3
3.0
nC
Q
gs
Gate to Source Gate Charge
-
6.9
-
nC
Q
gs2
Gate Charge Threshold to Plateau
-
4.6
-
nC
Q
gd
Gate to Drain "Miller" Charge
-
9.8
-
nC
t
O N
Turn-On Time
V
DD
= 15V, I
D
= 35A
V
GS
= 10V, R
GS
= 6.2
-
-
171
ns
t
d(ON)
Turn-On Delay Time
-
9
-
ns
t
r
Rise Time
-
106
-
ns
t
d(OFF)
Turn-Off Delay Time
-
53
-
ns
t
f
Fall Time
-
41
-
ns
t
OFF
Turn-Off Time
-
-
143
ns
V
SD
Source to Drain Diode Voltage
I
SD
= 35A
-
-
1.25
V
I
SD
= 15A
-
-
1.0
V
t
rr
Reverse Recovery Time
I
SD
= 35A, dI
SD
/dt = 100A/
s
-
-
27
ns
Q
RR
Reverse Recovered Charge
I
SD
= 35A, dI
SD
/dt = 100A/
s
-
-
12
nC
2004 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C
F
D
D
8
8
9
6
/
F
D
U
8
8
9
6
Typical Characteristics
T
C
= 25C unless otherwise noted
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
M
U
L
T
I
P
L
I
E
R
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
25
50
75
100
25
50
75
100
125
150
175
I
D
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
T
C
, CASE TEMPERATURE (
o
C)
CURRENT LIMITED
BY PACKAGE
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
J
C
,
N
O
R
M
A
L
I
Z
E
D
T
H
E
R
M
A
L
I
M
P
E
D
A
N
C
E
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
100
1000
30
I
D
M
,
P
E
A
K
C
U
R
R
E
N
T
(
A
)
t, PULSE WIDTH (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 4.5V
2004 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C
F
D
D
8
8
9
6
/
F
D
U
8
8
9
6
Figure 5. Forward Bias Safe Operating Area
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25C unless otherwise noted
0.1
1
10
100
1000
1
10
60
V
D S
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10
s
1ms
DC
100
s
10ms
1
10
100
0.01
0.1
1
10
100
500
I
A
S
,
A
V
A
L
A
N
C
H
E
C
U
R
R
E
N
T
(
A
)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
A V
= (L)(I
A S
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
A V
= (L/R)ln[(I
A S
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0
20
40
60
80
100
1.5
2.0
2.5
3.0
3.5
I
D
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
20
40
60
80
100
0
0.2
0.4
0.6
0.8
I
D
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 4V
V
GS
= 2.5V
V
GS
= 5V
V
GS
= 3V
4
6
8
10
12
14
2
4
6
8
10
I
D
= 1A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 35A
r
D
S
(
O
N
)
,
D
R
A
I
N
T
O
S
O
U
R
C
E
O
N
R
E
S
I
S
T
A
N
C
E
(
m
)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
1.4
1.6
-80
-40
0
40
80
120
160
200
N
O
R
M
A
L
I
Z
E
D
D
R
A
I
N
T
O
S
O
U
R
C
E
T
J
, JUNCTION TEMPERATURE (
o
C)
O
N
R
E
S
I
S
T
A
N
C
E
V
GS
= 10V, I
D
= 35A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
2004 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C
F
D
D
8
8
9
6
/
F
D
U
8
8
9
6
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
Typical Characteristics
T
C
= 25C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
V
GS
= V
DS
, I
D
= 250
A
N
O
R
M
A
L
I
Z
E
D
G
A
T
E
T
J
, JUNCTION TEMPERATURE (
o
C)
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
O
R
M
A
L
I
Z
E
D
D
R
A
I
N
T
O
S
O
U
R
C
E
I
D
= 250
A
B
R
E
A
K
D
O
W
N
V
O
L
T
A
G
E
100
1000
0.1
1
10
30
5000
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
V
D S
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
10
20
30
40
50
V
G
S
,
G
A
T
E
T
O
S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
)
Q
g
, GATE CHARGE (nC)
V
DD
= 15V
I
D
= 35A
I
D
= 5A
WAVEFORMS IN
DESCENDING ORDER:
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