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Электронный компонент: FDDL300

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FDH/FDLL 300/A / 333
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
W
IV
Working Inverse Voltage
125
V
I
O
Average Rectified Current
200
mA
I
F
DC Forward Current
500
mA
i
f
Recurrent Peak Forward Current
600
mA
i
f(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
4.0
A
A
T
stg
Storage Temperature Range
-65 to +200
C
T
J
Operating Junction Temperature
175
C
Symbol
Characteristic
Max
Units
FDH/FDLL 300/A / 333
P
D
Total Device Dissipation
Derate above 25
C
500
3.33
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
300
C/W
COLOR BAND MARKING
DEVICE
1ST BAND
2ND BAND
FDLL300
BROWN
GREEN
FDLL300A
BROWN
YELLOW
FDLL333
BROWN
BLUE
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
DO-35
FDH300/A / FDLL300/A / FDH333 / FDLL333
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
B
V
Breakdown Voltage
I
R
= 100
A
150
V
I
R
Reverse Current
FDH/FDLL 300/A
FDH/FDLL 333
V
R
= 125 V
V
R
= 125 V, T
A
= 150
C
V
R
= 125 V
V
R
= 125 V, T
A
= 100
C
1.0
3.0
3.0
500
nA
A
nA
nA
V
F
Forward Voltage
FDH/FDLL 300/A
FDH/FDLL 300
FDH/FDLL 300A
FDH/FDLL 300/A
FDH/FDLL 300
FDH/FDLL 300A
FDH/FDLL 300/A
FDH/FDLL 300/A
FDH/FDLL 333
I
F
= 1.0 mA
I
F
= 5.0 mA
I
F
= 5.0 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
I
F
= 200 mA
I
F
= 250 mA
I
F
= 300 mA
800
830
860
0.87
0.88
0.9
680
750
760
800
880
890
920
1.0
890
940
970
1.05
1.08
1.15
mV
mV
mV
mV
mV
mV
mV
V
mV
mV
mV
V
V
V
C
O
Diode Capacitance
V
R
= 0, f
= 1.0 MHz
6.0
pF
FDH300/A / FDLL300/A / FDH333 / FDLL333
High Conductance Low Leakage Diode
(continued)
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
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MICROWIRETM
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QSTM
Quiet SeriesTM
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SuperSOTTM-6
SuperSOTTM-8
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This datasheet contains the design specifications for
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