August 2005
FDFMA2P853 Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
2005 Fairchild Semiconductor Corporation
FDFMA2P853 Rev. C (W)
1
FDFMA2P853
Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance and an independently
connected low forward voltage schottky diode for minimum
conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.
Features
MOSFET:
-3.0 A, -20V. R
DS(ON)
= 120 m
@ V
GS
= -4.5 V
R
DS(ON)
= 160 m
@ V
GS
= -2.5 V
R
DS(ON)
= 240 m
@ V
GS
= -1.8 V
Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
Schottky:
V
F
< 0.46 V @ 500 mA
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
MOSFET Drain-Source Voltage
-20
V
V
GSS
MOSFET Gate-Source Voltage
8
V
I
D
Drain Current -Continuous (Note 1a)
-Pulsed
-2.2
A
-6
V
RRM
Schottky Repetitive Peak Reverse voltage
20
V
I
O
Schottky Average Forward Current (Note 1a)
1
A
P
D
Power dissipation for Single Operation (Note 1a)
Power dissipation for Single Operation (Note 1b)
1.4
W
0.7
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
o
C
R
JA
Thermal Resistance, Junction-to-Ambient (Note 1a)
86
o
C/W
R
JA
Thermal Resistance, Junction-to-Ambient (Note 1b)
173
R
JA
Thermal Resistance, Junction-to-Ambient (Note 1c)
86
R
JA
Thermal Resistance, Junction-to-Ambient (Note 1d)
140
Device Marking
Device
Reel Size
Tape Width
Quantity
.853
FDFMA2P853
7inch
8mm
3000 units
5
1
6
2
3
4
MicroFET
C
A
G
NC D
S
PIN
C
G
S
A
NC
D
C
D
FDFMA2P853 Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
FDFMA2P853 Rev. C (W)
2
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= -250
A
-20
-
-
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250
A,
Referenced to 25C
-
-12
-
mV/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -16V, V
GS
= 0V
-
-
-1
A
I
GSS
Gate-Body Leakage,
V
GS
=
8V, V
DS
= 0V
-
-
100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250
A
-0.4
-0.7
-1.5
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= -250
A,
Referenced to 25C
-
2
-
mV/C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5V, I
D
= -3.0A
-
90
120
m
V
GS
= -2.5V, I
D
= -2.5A
-
120
160
V
GS
= -1.8V, I
D
= -1.0A
-
172
240
V
GS
= -4.5V, I
D
= -3.0A
T
J
= 125C
-
118
160
I
D(on)
On-State Drain Current
V
GS
= -4.5V, V
DS
= -5V
-20
-
-
A
g
FS
Forward Transconductance
V
DS
= -5V, I
D
= -3.0A
-
7
-
S
(Note 2)
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
-
435
-
pF
C
oss
Output Capacitance
-
80
-
pF
C
rss
Reverse Transfer Capacitance
-
45
-
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
V
DD
= -10V, I
D
= -1A
V
GS
= -4.5V, R
GEN
= 6
-
9
18
ns
t
r
Turn-On Rise Time
-
11
19
ns
t
d(off)
Turn-Off Delay Time
-
15
27
ns
t
f
Turn-Off Fall Time
-
6
12
ns
Q
g
Total Gate Charge
V
DS
= -10V, I
D
= -3.0A,
V
GS
= -4.5V
-
4
6
nC
Q
gs
Gate-Source Charge
-
0.8
-
nC
Q
gd
Gate-Drain Charge
-
0.9
-
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
-
-
-1.1
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= -1.1 A (Note 2)
-
-0.8
-1.2
V
t
rr
Diode Reverse Recovery Time
I
F
= -3.0A, dI
F
/dt=100A/
s
-
17
-
ns
Q
rr
Diode Reverse Recovery Charge
-
6
-
nC
Schottky Diode Characteristic
I
R
Reverse Leakage
V
R
= 20V
T
J
= 25C
-
9.9
100
A
T
J
= 85C
-
0.3
1
mA
T
J
= 125C
-
2.3
10
mA
V
F
Forward Voltage
I
F
= 500mA
T
J
= 25C
-
0.4
0.46
V
T
J
= 125C
-
0.3
0.35
FDFMA2P853 Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
FDFMA2P853 Rev. C (W)
3
Electrical Characteristics
T
A
= 25C unless otherwise noted
Notes:
1. R
JA
is determined with the device mounted on a 1 in
2
oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
JC
is guaranteed by
design while R
JA
is determined by the user's board design.
(a) MOSFET R
JA
= 86C/W when mounted on a 1 in
2
pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
(b) MOSFET R
JA
= 173C/W when mounted on a minimum pad of 2 oz copper
(c) Schottky R
JA
= 86C/W when mounted on a 1 in
2
pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
(d) Schottky R
JA
= 140C/W when mounted on a minimum pad of 2 oz copper
a) 86
o
C/W
when
mounted
on a 1in
2
pad of 2 oz
copper
b) 173
o
C/W
when
mounted on
a minimum
pad of
2 oz copper
Scale 1: 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
c) 86
o
C/W
when
mounted
on a 1in
2
pad of 2 oz
copper
d) 140
o
C/W
when
mounted on
a minimum
pad of
2 oz copper
FDFMA2P853 Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
FDFMA2P853 Rev. C (W)
4
Typical Characteristics
Figure 1.
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
,
DR
A
I
N C
U
RREN
T
(
A
)
-2.5V
-2.0V
V
GS
= -4.5V
-3.0V
-3.5V
-1.8V
-1.5V
On-Region Characteristics
Figure 2.
0.6
1
1.4
1.8
2.2
2.6
3
0
1
2
3
4
5
6
-I
D
, DRAIN CURRENT (A)
R
DS
(
O
N
)
,
NO
R
M
AL
I
Z
E
D
D
R
AI
N-S
O
U
R
CE
ON
-
R
E
S
I
S
TAN
C
E
V
GS
= -1.5V
-3.5V
-4.5V
-3.0V
-1.8V
-2.5V
-2.0V
On-Resistance Variation with
Drain Current and Gate Voltage
Figure 3.
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N
)
,
N
O
RM
AL
I
Z
ED
DR
AI
N-
S
O
U
R
CE
ON
-
RE
S
I
S
T
AN
CE
I
D
= -3.0A
V
GS
= -4.5V
On-Resistance Variation with
Temperature
Figure 4.
0.04
0.1
0.16
0.22
0.28
0
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(
O
N)
, O
N
-R
E
S
IS
T
A
N
C
E
(O
H
M
)
I
D
= -1.5A
T
A
= 125
o
C
T
A
= 25
o
C
On-Resistance Variation with
Gate-to-Source Voltage
Figure 5. Transfer Characteristics
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
,
DRAI
N CURREN
T
(
A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= -5V
Figure 6.
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-I
S
,
RE
V
E
RS
E
DRAI
N CUR
RE
NT
(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Body Diode Forward Voltage Variation
with Source Current and Temperature
FDFMA2P853 Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
FDFMA2P853 Rev. C (W)
5
Figure 7.
0
1
2
3
4
5
0
1
2
3
4
5
Q
g
, GATE CHARGE (nC)
-V
GS
,
G
A
TE
-
S
O
U
R
C
E VO
LTA
G
E
(V
)
I
D
= -3.0A
V
DS
= -5V
-15V
-10V
Gate Charge Characteristics
Figure 8.
0
100
200
300
400
500
600
700
0
4
8
12
16
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
AP
A
CI
T
A
NC
E
(
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Capacitance Characteristics
Figure 9.
0.001
0.01
0.1
1
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
F
, FORWARD VOLTAGE (V)
I
F
,
F
O
RW
A
R
D LEAK
AG
E CU
R
REN
T(
A
)
T
J
= 25
o
C
T
J
= 125
o
C
Schottky Diode Forward Voltage
Figure 10.
0.000001
0.00001
0.0001
0.001
0.01
0
5
10
15
20
V
R
, REVERSE VOLTAGE (V)
I
R
,
RE
V
E
R
S
E
L
E
AKAGE
C
URRENT
(
A)
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 85
o
C
Schottky Diode Reverse Current
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Typical Characteristics
FDFMA2P853 Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
FDFMA2P853 Rev. C (W)
6
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intended to be an exhaustive list of all such trademarks.
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACExTM
ActiveArrayTM
BottomlessTM
Build it NowTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
IntelliMAXTM
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerEdgeTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UltraFET
UniFETTM
VCXTM
WireTM
Across the board. Around the world.TM
The Power Franchise
Programmable Active DroopTM
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FDFMA2P853 Rev. C (W)
7
FDFMA2P853 Integrated P-Channel PowerTrench
MOSFET and Sch
o
ttky Diode
Rev. I16
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