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Электронный компонент: FDFMC2P120

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July
2005
2005 Fairchild Semiconductor Corporation
FDFMC2P120 Rev.E (W)
FDFMC2P120
Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
General Description
FDFMC2P120 combines the exceptional performance
of Fairchild's PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in a MicroFET package.
This device is designed specifically as a single package
solution for Buck Boost. It features a fast switching, low
gate charge MOSFET with very low on-state resistance.
Applications
Buck Boost
Features
2 A, 20 V
R
DS(ON)
= 125 m
@ V
GS
= 4.5 V
R
DS(ON)
= 200 m
@ V
GS
= 2.5 V
Low Profile 0.8mm maximum in the new package
MicroFET 3x3 mm
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
20
V
V
GSS
Gate-Source
Voltage
12
V
I
D
Drain Current Continuous
(Note 1a)
3.5 A
Pulsed
10
V
RRM
Schottky Repetitive Peak Reverse Voltage
20
V
I
O
Schottky Average Forward Current
(Note a)
2 A
P
D
Power Dissipation (Steady State)
(Note 1a)
2.4 W
(Note 1b)
1.2
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
60
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
145
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2P120
FDFMC2P120
7''
12mm
3000 units
FDFMC2P120
6 5 4
MLP 3x3
PIN 1 2 3
TOP
BOTTOM
NC
S
S
A
A
G
3
2
1
4
5
6
TO BOTTOM
FDFMC2P120 Rev.E (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown
Voltage
V
GS
= 0 V,
I
D
= 250
A
20 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
11 mV/
C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 16 V, V
GS
= 0 V
1
A
I
GSS
GateBody
Leakage,
V
GS
=
12 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
G,
I
D
= 250
A
0.6 1.0 1.5 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
3
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 4.5 V, I
D
= 2 A
V
GS
= 2.5 V, I
D
= 2 A
V
GS
= 4.5 V, I
D
= 2A,T
J
=125
C
101
145
136
125
200
180
m
I
D(on)
OnState Drain Current
V
GS
= 2.5 V, V
DS
= 5 V
10
A
g
FS
Forward
Transconductance
V
DS
= 5 V,
I
D
= 3.5 A
6
S
Dynamic Characteristics
C
iss
Input
Capacitance
280
pF
C
oss
Output
Capacitance
65
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
35 pF
R
G
Gate
Resistance
V
GS
= 0 V,
f = 1.0 MHz
7
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
8
16
ns
t
r
TurnOn Rise Time
12
22
ns
t
d(off)
TurnOff Delay Time
11
20
ns
t
f
TurnOff
Fall
Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
3.2
6.4 ns
Q
g
Total Gate Charge
3
4
nC
Q
gs
GateSource
Charge
0.7
nC
Q
gd
GateDrain
Charge
V
DS
= 10 V, I
D
= 3.5 A,
V
GS
= 4.5 V
1 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
2
A
V
SD
DrainSource
Diode
Forward
Voltage
V
GS
= 0 V, I
S
= 2 A
(Note 2)
0.9
1.2
V
t
rr
Diode Reverse Recovery Time
13
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 3.5 A,
dI
F/
dt = 100 A/s
3 nC
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
are guaranteed by design while R
JA
is determined by the user's board design.
(a).
R
JA
= 60C/W when mounted on a 1in
2
pad of 2 oz copper
(b).
R
JA
= 145C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDFMC2P120
FDFMC2P120 Rev.E (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Schottky Diode Characteristic
V
R
Reverse
Voltage
I
R
= 1mA
20
V
I
R
T
J
= 25
o
C
100
A
Reverse Leakage
V
R
= 5V
T
J
= 100
o
C
10
mA
V
F
Forward
Voltage
I
F
= 1A
T
J
= 25
o
C
0.32
0.39
V
FDFMC2
P12
FDFMC2P120 Rev.E (W)
Typical Characteristics
0
2
4
6
8
10
0
1
2
3
4
5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
,
DRA
IN C
URR
EN
T
(A
)
-2.5V
-2.0V
V
GS
= -4.5V
-3.0V
-3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
2
4
6
8
10
-I
D
, DRAIN CURRENT (A)
R
DS
(
O
N
)
, NOR
M
AL
IZE
D
DR
AIN
-
S
O
UR
CE
ON-
R
E
S
IS
TA
NC
E
V
GS
= -2.5V
-4.0V
-3.5V
-4.5V
-3.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
,
NO
R
M
AL
I
Z
E
D
DR
AIN
-
SOU
R
C
E
ON-R
ES
IST
A
N
C
E
I
D
= -3.5A
V
GS
= -4.5V
0.08
0.12
0.16
0.2
0.24
0.28
0.32
0.36
0.4
0.44
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N
)
, ON-R
ES
IST
A
N
C
E

(OHM
)
I
D
= -1.8A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
0.5
1
1.5
2
2.5
3
3.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
,
DRAI
N CUR
RENT

(
A
)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-I
S
,
RE
VE
RS
E D
R
A
I
N
CU
RR
EN
T (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDFMC2P120
FDFMC2P120 Rev.E (W)
Typical Characteristics
0
1
2
3
4
5
0
1
2
3
4
Q
g
, GATE CHARGE (nC)
-V
GS
, GAT
E
-
S
OUR
C
E VOLT
AGE

(
V
)
I
D
= -3.5A
V
DS
= -5V
-15V
-10V
0
100
200
300
400
500
0
4
8
12
16
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CA
PA
CIT
A
N
C
E
(pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
F
, FORWARD VOLTAGE (V)
I
F
,
F
O
RWAR
D L
E
AK
AGE
CURREN
T

(
A
)
T
J
= 25
o
C
T
J
= 125
o
C
0.000001
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
V
R
, REVERSE VOLTAGE (V)
I
R
,
RE
VER
SE
LE
AK
A
G
E C
U
R
R
E
N
T
(A
)
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 100
o
C
Figure 9. Schottky Diode Forward Voltage.
Figure 10. Schottky Diode Reverse Current .
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t),

N
O
R
M
A
L
I
Z
ED
E
F
F
E
C
T
I
V
E
T
RANS
I
E
NT
TH
E
R
M
A
L R
ESI
ST
A
N
C
E
R
JA
(t) = r(t) * R
JA
R
JA
=145 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDFMC2P120
FDFMC2P120 Rev.E (W)
FDFMC2P120
NOTES :
A. CONFORMS TO JEDEC REGISTRATION M0-229,
VARIATION WEEA, DATE 11/2001.
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M 1994
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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