FDFS2P102
FDFS2P102 Rev. E
FDFS2P102
Integrated P-Channel MOSFET and Schottky Diode
October 2000
2000 Fairchild Semiconductor International
MOSFET Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
-20
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current
- Continuous
(Note 1a)
-3.3
A
- Pulsed
-20
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
P
D
(Note 1c)
0.9
W
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
C
Schottky Diode Maximum Ratings
T
A
=25
o
C unless otherwise noted
V
RRM
Repetitive Peak Reverse Voltage
20
V
I
O
Average Forward Current
(Note 1a)
1
A
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDFS2P102
FDFS2P102
13
12mm
2500 units
General Description
The FDFS2P102 combines the exceptional performance of
Fairchild's high cell density
MOSFET with a very low forward
voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. The
independently connected Schottky diode allows its use in a variety
of DC/DC converter topologies.
Applications
DC/DC converters
Load Switch
Motor Drives
Features
3.3 A, 20 V.
R
DS(ON)
= 0.125
@ V
GS
= 10 V
R
DS(ON)
= 0.200
@ V
GS
= 4.5 V.
VF < 0.39 V @ 1 A (TJ = 125
oC).
VF < 0.47 V @ 1 A.
VF < 0.58 V @ 2 A.
Schottky and MOSFET incorporated into single power
surface mount SO-8 package.
Electrically independent Schottky and MOSFET pinout for
design flexibility.
A
A
S
G
C
C
D
D
Pin 1
8
1
7
2
6
3
5
4
A
A
S
G
C
C
D
D
FDFS2P102
FDFS2P102 Rev. E
Electrical Characteristics
T
A
= 25 C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250
A
-20
V
-1
I
DSS
Zero Gate Voltage Drain Current
V
DS
= - 16 V,
V
GS
= 0 V
T
J
= 55
C
-10
A
I
GSSF
Gate-Body Forward Leakage
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate-Body Reverse Leakage
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250
A
-1
-1.4
-2
V
V
GS
= -10 V, I
D
= -3.3 A
0.100
0.125
R
DS(on)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -2.5 A
0.167
0.2
I
D(on)
On-State Drain Current
V
GS
= -10 V, V
DS
= -5 V
-10
A
g
FS
Forward Transconductance
V
DS
= -10 V, I
D
= -3.3 A
5
S
Dynamic Characteristics
C
iss
Input Capacitance
270
pF
C
oss
Output Capacitance
150
pF
C
rss
Reverse Transfer Capacitance
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
45
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
8
16
ns
t
r
Turn-On Rise Time
7
14
ns
t
d(off)
Turn-Off Delay Time
17
27
ns
t
f
Turn-Off Fall Time
V
DD
= -15 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 6
10
1.8
ns
Q
g
Total Gate Charge
V
DS
= -5 V, I
D
= -3.3 A,
V
GS
= -10 V,
7
10
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
-1.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-0.8
-1.2
V
Schottky Diode Characteristics
T
J
= 25
C
250
uA
I
R
Reverse Leakage
V
R
= 20 V
T
J
= 125
C
18
mA
V
F
Forward Voltage
I
F
= 1 A
T
J
= 25
C
0.47
V
T
J
= 125
C
0.39
I
F
= 2 A
T
J
= 25
C
0.58
T
J
= 125
C
0.53
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
Notes:
1: R
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
a) 50
C/W when
mounted on a 1 in
2
pad of 2 oz. copper.
b) 105
C/W when
mounted on a 0.04 in
2
pad of 2 oz. copper.
c) 125
C/W when
mounted on a minimum
pad.
FDFS2P102
FDFS2P102 Rev. E
Typical Characteristics
0.8
1
1.2
1.4
1.6
1.8
2
0
10
20
30
40
50
60
I
D
, DIRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 4.0V
5.0V
6.0V
7.0V
10V
4.5V
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 7.6A
V
GS
= 10V
0
10
20
30
40
50
60
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
0
0.01
0.02
0.03
0.04
0.05
0.06
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 3.8A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current
and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0
1
2
3
4
5
0
4
8
12
16
20
-V , DRAIN-SOURCE VOLTAGE (V)
-
I
,
DRA
I
N
-S
O
URCE
CURRE
NT (A
)
DS
D
-4.5V
-4.0V
-6.0V
-3.5V
V = -10V
GS
-7.0V
-5.0V
FDFS2P102
FDFS2P102 Rev. E
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0
2
4
6
8
10
0
5
10
15
20
25
30
35
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 7.6A
V
DS
= 10V
20V
40V
0
400
800
1200
1600
2000
2400
0
10
20
30
40
50
60
70
80
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 10. Schottky Diode Reverse Current.
Figure 9. Schottky Diode Forward Voltage.
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
0.2
0.5
1
2
5
10
V , FORWARD VOLTAGE (V)
I
, F
O
R
W
AR
D
C
U
R
R
EN
T
(
A
)
25 C
F
F
T = 125 C
J
0
5
10
15
20
0.0001
0.0002
0.0005
0.001
V , R EVER SE V O LTA G E (V)
I
,
RE
V
E
RS
E
C
URRE
NT
(
A
)
R
R
T = 25 C
J
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
R
AN
SI
EN
T
T
H
ER
M
A
L
R
ESI
ST
AN
C
E
r
(
t), N
O
R
M
A
L
IZ
E
D
E
F
F
E
C
T
IV
E
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1
2
R (t) = r(t) * R
R =135 C/W
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
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not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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