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August 2001
2001 Fairchild Semiconductor Corporation
FDFS2P102A Rev A1(W)
FDFS2P102A
Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
General Description
The FDFS2P102A combines the exceptional
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
3.3 A, 20V R
DS(ON)
= 125 m
@ V
GS
= 10 V
R
DS(ON)
= 200 m
@ V
GS
= 4.5 V
V
F
< 0.39 V @ 1 A (T
J
= 125
C)
V
F
< 0.47 V @ 1 A
V
F
< 0.58 V @ 2 A
Schottky and MOSFET incorporated into single
power surface mount SO-8 package
Electrically independent Schottky and MOSFET
pinout for design flexibility
A
A
S
G
C
C
D
D
Pin 1
SO-8
8
1
7
2
6
3
5
4
A
A
S
G
C
C
D
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
MOSFET Drain-Source Voltage
20
V
V
GSS
MOSFET Gate-Source Voltage
20
V
I
D
Drain Current Continuous
(Note 1a)
3.3
A
Pulsed
10
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
P
D
(Note 1c)
0.9
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
V
RRM
Schottky Repetitive Peak Reverse Voltage
20 V
I
O
Schottky Average Forward Current
(Note 1a)
1 A
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDFS2P102A FDFS2P102A 13''
12mm
2500
units
FDFS2P102A
FDFS2P102A Rev A1(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V, I
D
= 250
A
20 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A,Referenced to 25C
23 mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16 V, V
GS
= 0 V
1
A
I
GSSF
GateBody
Leakage,
Forward V
GS
= 20 V,
V
DS
= 0 V
100
nA
I
GSSR
GateBody
Leakage,
Reverse V
GS
= 20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
1 1.8 3 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A,Referenced to 25C
4.4 mV/
C
R
DS(on)
Static
DrainSource
OnResistance
V
GS
= 10 V,
I
D
= 3.3 A
V
GS
= 4.5 V, I
D
= 2.5 A
V
GS
=10 V, I
D
=3.3A, T
J
=125
C
96
152
137
125
200
190
m
I
D(on)
OnState Drain Current
V
GS
= 10 V, V
DS
= 5 V
10
A
g
FS
Forward
Transconductance V
DS
= 5V, I
D
= 3.3 A
4.6
S
Dynamic Characteristics
C
iss
Input
Capacitance
182
pF
C
oss
Output
Capacitance
60 pF
C
rss
Reverse
Transfer
Capacitance
V
DS
= 10 V,
V
GS
= 0 V,
f = 1.0 MHz
24 pF
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
5
10
ns
t
r
TurnOn Rise Time
14
52
ns
t
d(off)
TurnOff
Delay
Time
11
20
ns
t
f
TurnOff Fall Time
V
DD
= 10 V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
2 4 ns
Q
g
Total
Gate
Charge
2.1
3.0
nC
Q
gs
GateSource
Charge
1.0
nC
Q
gd
GateDrain
Charge
V
DS
= 10 V,
I
D
= 3.3 A,
V
GS
= 5 V
0.6 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
1.3
A
V
SD
DrainSource Diode Forward Voltage V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
0.8
1.2 V
Schottky Diode Characteristics
I
R
Reverse
Leakage
V
R
= 20 V
T
J
= 25
C
50
A
T
J
= 125
C
18
mA
V
F
Forward
Voltage
I
F
= 1 A
T
J
= 25
C
0.47
V
T
J
= 125
C
0.39
I
F
= 2 A
T
J
= 25
C
0.58
T
J
= 125
C
0.53
FDFS2P102A
FDFS2P102A Rev A1(W)
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
C/W
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 78C/W
when
mounted on a
0.5in
2
pad of 2
oz copper
b) 125C/W
when
mounted on a
0.02 in
2
pad of
2 oz copper
c) 135C/W
when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDFS2P102A
FDFS2P102A Rev A1(W)
Typical Characteristics
0
2
4
6
8
10
0
1
2
3
4
5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN-
S
O
URCE
CURRE
NT (
A
)
V
GS
= -10V
-4.5V
-3.5V
-4.0V
-6.0V
-5.0V
-7.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
2
4
6
8
10
- I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANCE
V
GS
= -4.0V
-7.0V
-4.5V
-10V
-6.0V
-5.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANC
E
I
D
= -3.3A
V
GS
= -10V
0.04
0.1
0.16
0.22
0.28
0.34
0.4
0.46
0.52
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
, O
N
-
R
E
S
I
S
T
ANCE
(
O
HM)
I
D
= -1.7A
A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRE
NT (
A
)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-I
S
,
R
EVER
SE
DRAIN CURRE
NT (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDFS2P102A
FDFS2P102A Rev A1(W)
Typical Characteristics
0
2
4
6
8
10
0
1
2
3
4
Q
g
, GATE CHARGE (nC)
-V
GS
, G
A
TE
-
S
O
URCE
V
O
LTAG
E
(
V
)
I
D
= -3.3A
V
DS
= -5V
-10V
-15V
0
50
100
150
200
250
300
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACITANCE
(
pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
F
, FORWARD VOLTAGE (V)
I
F
, FO
RWARD LE
AKAG
E
CURRE
NT (
A
)
T
J
= 25
o
C
T
J
= 125
o
C
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
0
5
10
15
20
V
R
, REVERSE VOLTAGE (V)
I
R
,
R
EVER
SE L
E
AKAG
E
CURRE
NT (
A
)
T
J
= 25
o
C
T
J
= 125
o
C
Figure 9. Schottky Diode Forward Voltage.
Figure 10. Schottky Diode Reverse Current.
0.01
0.1
1
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(t),
N
O
R
M
A
L
I
Z
ED
EFFEC
T
I
VE
T
RANS
IE
NT
T
H
E
R
M
A
L
RE
S
I
S
T
ANCE
R
JA
(t) = r(t) + R
JA
R
JA
= 135 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDFS2P102A
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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STAR*POWER is used under license
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