FDG315N
FDG315N Rev. C
FDG315N
N-Channel Logic Level PowerTrench
MOSFET
July 2000
2000 Fairchild Semiconductor International
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current - Continuous
(Note 1a)
2
A
- Pulsed
6
Power Dissipation for Single Operation
(Note 1a)
0.75
W
P
D
(Note 1b)
0.48
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
260
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.
15
FDG315N
7''
8mm
3000 units
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
DC/DC converter
Load switch
Power Management
Features
2 A, 30 V. R
DS(ON)
= 0.12
@ V
GS
= 10 V
R
DS(ON)
= 0.16
@ V
GS
= 4.5 V.
Low gate charge (2.1nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
Compact industry standard SC70-6 surface mount
package.
SC70-6
D
S
D
G
D
D
3
5
6
4
1
2
3
FDG315N
FDG315N Rev. C
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
26
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
A
I
GSS
Gate-Body Leakage Forward
V
GS
= 16 V, V
DS
= 0 V
100
nA
I
GSS
Gate-Body Leakage Reverse
V
GS
= -16 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
1
1.8
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
-4
mV/
C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 2 A
V
GS
= 10 V, I
D
= 2 A, T
J
= 125
C
V
GS
= 4.5 V, I
D
= 1.7 A
0.100
0.140
0.130
0.12
0.20
0.16
I
D(on)
On-State Drain Current
V
GS
= 4.5 V, V
DS
= 5 V
3
A
G
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 2 A
5
S
Dynamic Characteristics
C
iss
Input Capacitance
220
pF
C
oss
Output Capacitance
50
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
20
pF
Switching Characteristics
(Note 2)
I
d(on)
Turn-On Delay Time
3
6
ns
t
r
Turn-On Rise Time
11
22
ns
t
d(off)
Turn-Off Delay Time
7
14
ns
t
f
Turn-Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
3
6
ns
Q
g
Total Gate Charge
2.1
4
nC
Q
gs
Gate-Source Charge
0.8
nC
Q
gd
Gate-Drain Charge
V
DS
= 15 V, I
D
= 2 A,
V
GS
= 5 V
0.7
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
0.42
A
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 0.42 A
(Note 2)
0.7
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
2. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
a) 170
C/W when mounted on a 1 in
2
pad of 2oz copper.
b) 260
C/W when mounted on a minimum pad.
FDG315N
FDG315N Rev. C
Typical Characteristics
0
2
4
6
8
10
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN-
S
O
URCE
CURRE
NT (
A
)
V
GS
= 10V
3.0V
4.5V
3.5V
4.0V
5.0V
6.0V
0.8
1
1.2
1.4
1.6
1.8
2
0
2
4
6
8
10
I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANC
E
V
GS
= 3.5V
10V
4.0V
5.0V
4.5V
6.0V
8.0V
0
2
4
6
8
10
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT (
A
)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, R
EVER
SE
DRAI
N CURRE
N
T (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
, O
N
-
R
E
S
I
S
T
ANCE
(
O
HM)
I
D
= 1A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(O
N)
,
NO
RMALI
Z
E
D
DRAI
N-S
O
URCE
O
N
-RE
S
I
S
TANC
E
I
D
= 2A
V
GS
= 10V
FDG315N
FDG315N Rev. C
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
1
10
100
300
0.005
0.01
0.05
0.1
0.5
1
t , TIME (sec)
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
RE
S
I
S
T
ANCE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
(
t
)
,
N
O
RM
AL
IZ
E
D
E
F
FE
C
T
IV
E
Duty Cycle, D = t / t
1
2
R (t) = r(t) * R
R =260C/W
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
0
6
12
18
24
30
0.0001
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
POW
ER
(W
)
SINGLE PULSE
R
JA
= 260
o
C/W
T
A
= 25
o
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0
2
4
6
8
10
0
1
2
3
4
5
Q
g
, GATE CHARGE (nC)
V
GS
, G
A
TE
-
S
O
URCE
V
O
LTAG
E
(
V
)
I
D
= 2A
V
DS
= 5V
10V
15V
0
50
100
150
200
250
300
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACITANCE
(
p
F
)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
0.01
0.1
1
10
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRAI
N CU
RRE
NT (A)
DC
10s
1s
100ms
10ms
1ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 260
o
C/W
T
A
= 25
o
C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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