July 1999
FDG6302P
Dual P-Channel,
Digital FET
General Description
Features
.
*
The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
FDG6302P
Units
V
DSS
Drain-Source Voltage
-25
V
V
GSS
Gate-Source Voltage
-8
V
I
D
Drain/Output Current
- Continuous
-0.14
A
- Pulsed
-0.4
P
D
Maximum Power Dissipation
(Note 1)
0.3
W
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100 pF / 1500
)
6.0
kV
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
C/W
FDG6302P Rev.F1
-25 V, -0.14 A continuous, -0.4 A peak.
R
DS(ON)
= 10
@ V
GS
= -4.5 V,
R
DS(ON)
= 13
@ V
GS
= -2.7 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V
GS(th)
< 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface
mount package.
These dual P-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. This device has been
designed especially for low voltage applications as a
replacement for bipolar digital transistors and small
signal MOSFETs.
SOT-23
SuperSOT
TM
-8
SO-8
SOT-223
SC70-6
SuperSOT
TM
-6
1 or 4
*
6 or 3
5 or 2
4 or 1
*
2 or 5
3 or 6
SC70-6
G1
D2
S1
D1
S2
G2
.02
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 A
-25
V
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
I
D
= -250 A, Referenced to 25
o
C
-19
mV /
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -20 V, V
GS
= 0 V
-1
A
T
J
= 55C
-10
A
I
GSS
Gate - Body Leakage Current
V
GS
= -8 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 A
-0.65
-0.9
-1.5
V
V
GS(th)
/
T
J
Gate Threshold Voltage Temp.Coefficient
I
D
= -250 A, Referenced to 25
o
C
2
mV /
o
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -0.14 A
7.3
10
T
J
=125C
11
17
V
GS
= -2.7 V, I
D
= -0.05 A
10.4
13
I
D(ON)
On-State Drain Current
V
GS
= -4.5 V, V
DS
= -5 V
-0.14
A
g
FS
Forward Transconductance
V
DS
= -5 V, I
D
= -0.14 A
0.12
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
12
pF
C
oss
Output Capacitance
7
pF
C
rss
Reverse Transfer Capacitance
1.5
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= -5 V, I
D
= -0.25 A,
V
GS
= -4.5 V, R
GEN
= 6
5
12
ns
t
r
Turn - On Rise Time
8
16
ns
t
D(off)
Turn - Off Delay Time
9
18
ns
t
f
Turn - Off Fall Time
5
10
ns
Q
g
Total Gate Charge
V
DS
= -5 V, I
D
= -0.14 A,
V
GS
= -4.5 V
0.22
0.31
nC
Q
gs
Gate-Source Charge
0.12
nC
Q
gd
Gate-Drain Charge
0.05
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Source Current
-0.25
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.25 A
(Note 2)
-0.8
-1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed
by design while R
CA
is determined by the user's board design. R
JA
= 415
O
C/W on minimum pad mounting on FR-4 board in still air.
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
FDG6302P Rev.F1
FDG6302P Rev.F
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = -4.5V
GS
I = -0.14A
D
0
1
2
3
4
0
0.05
0.1
0.15
0.2
-V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN-SOURCE CURRENT (A)
V = -4.5V
GS
DS
D
-2.7V
-3.0V
-3.5V
-2.0V
-2.5V
0
0.05
0.1
0.15
0.2
0.5
1
1.5
2
2.5
-I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = -2.0V
GS
D
R , NORMALIZED
DS(ON)
-4.5V
-4.0V
-3.0V
-2.7V
-3.5V
-2.5V
1.5
2
2.5
3
3.5
4
4.5
5
0
5
10
15
20
25
-V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(ON)
I = -0.07A
D
T = 125C
A
T = 25C
A
0
1
2
3
4
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
-V , GATE TO SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
V = -5.0V
DS
GS
D
T = -55C
A
125C
25C
0.2
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
0.3
-V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
T = 125C
A
25C
-55C
V = 0V
GS
SD
S
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDG6302P Rev.F
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
0
0.1
0.2
0.3
0.4
0.5
0
2
4
6
8
Q , GATE CHARGE (nC)
-V , GATE-SOURCE VOLTAGE (V)
g
GS
V = -5V
DS
-10
-15
I = -0.14A
D
1
2
3
5
10
20
40
0.005
0.03
0.1
0.3
1
- V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
RDS(ON) LIMIT
D
DC
DS
1s
100ms
10ms
V = -4.5V
SINGLE PULSE
R = 415C/W
T = 25C
JA
GS
A
10s
0.1
0.2
0.5
1
2
5
10
20
0.5
1
3
5
10
20
40
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0 V
GS
C
oss
C
rss
0.0001
0.001
0.01
0.1
1
10
200
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =415C/W
T = 25C
JA
A
0.0001
0.001
0.01
0.1
1
10
100
200
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
T - T = P * R (t)
A
J
P(pk)
t
1
t
2
JA
R (t) = r(t) * R
R =415
C/W
JA
JA
JA
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermalresponse will change depending on the circuit board design.
SC70-6 Unit Orientation
SC70-6 Packaging
Configuration: Figure 1.0
Components
Leader Tape
500mm minimum or
125 empty pockets
Trailer Tape
300mm minimum or
75 empty pockets
SC70-6 Tape Leader and Trailer
Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
SC70-6 Packaging Information
Standard
(no flow code)
D87Z
Packaging type
Reel Size
TNR
7" Dia
TNR
13"
Qty per Reel/Tube/Bag
3,000
10,000
Box Dimension (mm)
184x187x47
343x343x64
Max qty per Box
9,000
30,000
Weight per unit (gm)
0.0055
0.0055
Weight per Reel (kg)
0.1140
0.3960
F63TNR
Label
Customized Label
Antistatic Cover Tape
184mm x 187mm x 47mm
Pizza Box for Standard Option
F63TNR
Label
F63TNR Barcode Label
F63TNR Label sample
343mm x 342mm x 64mm
Intermediate box for D87Z Option
21
21
21
21
F63TNR
Label
21
Pin 1
LOT: CBVK741B019
FSID: FDG6302P
D/C1: D9842 QTY1:
SPEC REV:
SPEC:
QTY: 3000
D/C2:
QTY2:
CPN:
N/F: F (F63TNR)3
Packaging Description:
SC70-6 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a pizza box (illustrated in figure 1.0) made of
recyclable corrugated brown paper with a Fairchild logo
printing. One pizza box contains three reels maximum.
And these pizza boxes are placed inside a barcode
labeled shipping box which comes in different sizes
depending on the number of parts shipped.
Static Dissipative
Embossed Carrier Tape
SC70-6 Tape and Reel Data and Package Dimensions
August 1999, Rev. C
SC70-6 Tape and Reel Data and Package Dimensions, continued
July 1999, Rev. C
P1
A0
D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
8mm
7" Dia
7.00
177.8
0.059
1.5
0.512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 0.429
7.9 10.9
8mm
13" Dia
13.00
330
0.059
1.5
0.512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 0.429
7.9 10.9
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Option
Dim A
Max
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
SC70-6 Embossed Carrier Tape
Configuration: Figure 3.0
SC70-6 Reel Configuration: Figure 4.0
Dimensions are in millimeter
Pkg type
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
SC70-6
(8mm)
2.24
+/-0.10
2.34
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
+/-0.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
1.20
+/-0.10
0.255
+/-0.150
5.2
+/-0.3
0.06
+/-0.02
SC70-6 (FS PKG Code 76)
SC70-6 Tape and Reel Data and Package Dimensions, continued
September 1998, Rev. A1
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0055
TRADEMARKS
ACExTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
SuperSOTTM-8
SyncFETTM
TinyLogicTM
UHCTM
VCXTM
HiSeCTM
ISOPLANARTM
MICROWIRETM
POPTM
PowerTrench
QFETTM
QSTM
Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
Rev. E
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