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Электронный компонент: FDG6313N

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April 2002
FDG6313N
Dual N-Channel,
Digital FET
General Description
Features
*
The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol Parameter
FDG6313N Units
V
DSS
Drain-Source Voltage
25
V
V
GSS
Gate-Source Voltage
V
I
D
Drain/Output Current
- Continuous
0.5
A
- Pulsed
1.5
P
D
Maximum Power Dissipation
(Note 1)
0.3
W
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100 pF / 1500
)
6.0
kV
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
415
C/W
FDG6313N Rev.A
25 V, 0.50 A continuous, 1.5 A peak.
R
DS(ON)
= 0.45
@ V
GS
= 4.5 V,
R
DS(ON)
=0.60
@ V
GS
= 2.7 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V
GS(th)
< 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface
mount package.
These dual N-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. This device has been
designed especially for low voltage applications as a
replacement for bipolar digital transistors and small
signal MOSFETs.
SOT-23
SuperSOT
TM
-8
SO-8
SOT-223
SC70-6
SuperSOT
TM
-6
1 or 4
*
6 or 3
5 or 2
4 or 1
*
2 or 5
3 or 6
SC70-6
G1
D2
S1
D1
S2
G2
.
33
- 0.5 to +8
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
25
V
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
I
D
= 250 A, Referenced to 25
o
C
26
mV/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 20 V, V
GS
= 0 V
1
A
T
J
= 55C
10
A
I
GSS
Gate - Body Leakage Current
V
GS
= 8 V, V
DS
= 0 V
100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
0.65
0.8
1.5
V
V
GS(th)
/
T
J
Gate Threshold Voltage Temp.Coefficient
I
D
= 250 A, Referenced to 25
o
C
-2.6
mV/
o
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 0.5 A
0.34
0.45
T
J
=125C
0.55
0.77
V
GS
= 2.7 V, I
D
= 0.2 A
0.44
0.6
I
D(ON)
On-State Drain Current
V
GS
= 2.7 V, V
DS
= 5 V
0.5
A
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 0.5 A
1.45
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
50
pF
C
oss
Output Capacitance
28
pF
C
rss
Reverse Transfer Capacitance
9
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= 5 V, I
D
= 0.5 A,
V
GS
= 4.5 V, R
GEN
= 50
3
6
ns
t
r
Turn - On Rise Time
8.5
18
ns
t
D(off)
Turn - Off Delay Time
17
30
ns
t
f
Turn - Off Fall Time
13
25
ns
Q
g
Total Gate Charge
V
DS
= 5 V, I
D
= 0.5 A,
V
GS
= 4.5 V
1.64
2.3
nC
Q
gs
Gate-Source Charge
0.38
nC
Q
gd
Gate-Drain Charge
0.45
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Source Current
0.25
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.25 A
(Note 2)
0.8
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed
by design while R
CA
is determined by the user's board design. R
JA
= 415
O
C/W on minimum pad mounting on FR-4 board in still air.
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
FDG6313N Rev. A
FDG6313N Rev. A
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE
ON-RESISTANCE
V = 2.0V
GS
2.7V
3.0V
4.5V
D
3.5V
2.5V
R , NORMALIZED
D
S
(
O
N
)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE
ON-RESISTANCE
J
V = 4.5 V
GS
I = 0.5A
D
R , NORMALIZED
DS(ON)
0
0.5
1
1.5
2
2.5
3
0
0.3
0.6
0.9
1.2
1.5
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
2.7V
2.5V
V = 4.5V
GS
2.0V
1.5V
DS
D
3.0V
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.4
0.8
1.2
1.6
2
V , GATE TO SOURCE VOLTAGE (V)
R , ON-RESISTANCE (OHM)
DS(on)
GS
I = 0.3A
D
T = 125C
A
T = 25C
A
0
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25C
125C
V = 5.0V
DS
GS
D
T = -55C
J
0
0.2
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
V , BODY DIODE FORWARD VOLTAGE (V)
I
,

REVERSE
DRAIN
CURRENT
(A)
T = 125C
J
25C
-55C
V = 0V
GS
SD
S
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDG6313N Rev. A
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
(continued)
0.1
1
2
5
10
25
40
0.01
0.02
0.05
0.1
0.2
0.5
1
3
V , DRAI N-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
DC
1s
100ms
10s
RDS(ON)
LIMIT
V = 4.5V
SINGLE PULSE
R = 415 C/W
T = 25C
GS
A
JA
10ms
1ms
0.0001
0.001
0.01
0.1
1
10
100
200
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT
THERMAL
RESISTANCE
r(t),
NORMALIZED
EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
T - T = P * R (t)
A
J
P(pk)
t
1
t
2
JA
R (t) = r(t) * R
R =415
C/W
JA
JA
JA
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermal response will change depending on the circuit board design.
0.1
0.3
1
2
5
10
25
3
10
30
70
200
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE
(pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
0.0001
0.001
0.01
0.1
1
10
200
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
POWER
(W)
SINGLE PULSE
R =415C/W
T = 25C
JA
A
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 0.5A
D
10V
15V
V = 5V
DS
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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