December 2001
2001 Fairchild Semiconductor Corporation
FDG6316P Rev D W)
FDG6316P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild's advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Battery management
Load switch
Features
0.7 A, 12 V. R
DS(ON)
= 270 m
@ V
GS
= 4.5 V
R
DS(ON)
= 360 m
@ V
GS
= 2.5 V
R
DS(ON)
= 650 m
@ V
GS
= 1.8 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Compact industry standard SC70-6 surface mount
package
S
G
D
D
G
S
Pin 1
SC70-6
S
G
D
D
G
S
6 or 3
5 or 2
4 or 1
1 or 4
2 or 5
3 or 6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source
Voltage
12
V
V
GSS
Gate-Source
Voltage
8
V
I
D
Drain Current Continuous
(Note 1)
0.7 A
Pulsed
1.8
P
D
Power Dissipation for Single Operation
(Note 1)
0.3 W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.16 FDG6316P
7''
8mm
3000
units
FDG6316P
FDG6316P Rev D (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown
Voltage
V
GS
= 0 V,
I
D
= 250
A
12 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
3.7 mV/C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 10 V, V
GS
= 0 V
1
A
I
GSSF
GateBody
Leakage,
Forward
V
GS
= 8 V,
V
DS
= 0 V
100
nA
I
GSSR
GateBody
Leakage,
Reverse
V
GS
= 8 V,
V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
0.4 0.6 1.5 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25C
2
mV/
C
R
DS(on)
Static
DrainSource
OnResistance
V
GS
= 4.5 V, I
D
= 0.7 A
V
GS
= 2.5 V, I
D
= 0.5 A
V
GS
= 1.8 V, I
D
= 0.4 A
V
GS
= 4.5 V, I
D
= 0.7 A, T
J
=125C
221
297
427
250
270
360
650
348
m
I
D(on)
OnState Drain Current
V
GS
= 4.5 V, V
DS
= 5 V
1.8
A
g
FS
Forward
Transconductance
V
DS
= 5 V,
I
D
= 0.7 A
2.5
S
Dynamic Characteristics
C
iss
Input
Capacitance
146
pF
C
oss
Output
Capacitance
60
pF
C
rss
Reverse
Transfer
Capacitance
V
DS
= 6 V,
V
GS
= 0 V,
f = 1.0 MHz
48 pF
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
5
10
ns
t
r
TurnOn
Rise
Time
13
23
ns
t
d(off)
TurnOff
Delay
Time
8
16
ns
t
f
TurnOff Fall Time
V
DD
= 6 V,
I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
2 4 ns
Q
g
Total
Gate
Charge
1.7
2.4
nC
Q
gs
GateSource
Charge
0.3
nC
Q
gd
GateDrain
Charge
V
DS
= 6 V,
I
D
= 0.7 A,
V
GS
= 4.5 V
0.4 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
0.25
A
V
SD
DrainSource
Diode
Forward
Voltage
V
GS
= 0 V,
I
S
= 0.25 A
(Note 2)
0.7
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
JA
is determined by the user's board design. R
JA
= 415C/W when mounted on a minimum pad of FR-4
PCB on still air environment
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDG6316P
FDG6316P Rev D (W)
Typical Characteristics
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
3
3.5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRE
NT (
A
)
V
GS
=-4.5V
-1.8V
-2.0V
-2.5V
-1.5V
0.6
1
1.4
1.8
2.2
2.6
3
0
0.5
1
1.5
2
-I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
,
NO
RMALI
Z
E
D
DRAI
N-S
O
URCE
O
N
-RE
S
I
S
T
ANCE
V
GS
=-1.5V
-3.0V
-4.5V
-2.0V
-2.5V
-1.8V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANCE
I
D
= -0.7A
V
GS
= -4.5V
0.15
0.25
0.35
0.45
0.55
0.65
0.75
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
,
O
N
-RE
S
I
S
T
ANCE
(O
HM)
I
D
= -0.4A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
0.5
1
1.5
2
0.5
1
1.5
2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRE
NT (
A
)
T
A
= -55
o
C
25
o
C
-125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
,
R
EVER
SE
DRAIN CURRE
NT (
A
)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG6316P
FDG6316P Rev D (W)
Typical Characteristics
0
1
2
3
4
5
0
0.5
1
1.5
2
Q
g
, GATE CHARGE (nC)
-V
GS
, G
A
TE
-
S
O
URCE
V
O
LTAG
E
(
V
)
I
D
= -0.7A
V
DS
= -4V
-6V
-8V
0
50
100
150
200
250
0
2
4
6
8
10
12
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACITANCE
(
pF)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRE
NT (
A
)
DC
1s
100ms
100
s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
JA
= 415
o
C/W
T
A
= 25
o
C
10ms
1ms
0
2
4
6
8
10
0.001
0.01
0.1
1
10
100
t
1
, TIME (sec)
P
(
pk
)
,
P
E
AK TRANS
IE
NT P
O
WE
R (
W
)
SINGLE PULSE
R
JA
= 415C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t
1
, TIME (sec)
r
(t),
NO
RM
ALI
Z
E
D
E
FFE
CT
IVE T
R
A
N
SIEN
T
T
H
ER
M
A
L
R
ESIST
ANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 415
o
C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FDG6316P
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGICTM
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerTrench
QFETTM
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
SILENT SWITCHER
FAST
FASTrTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
ISOPLANARTM
LittleFETTM
MicroFETTM
MicroPakTM
MICROWIRETM
Rev. H4
ACExTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DenseTrenchTM
DOMETM
EcoSPARKTM
E
2
CMOS
TM
EnSigna
TM
FACTTM
FACT Quiet SeriesTM
SMART STARTTM
STAR*POWERTM
StealthTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogicTM
TruTranslationTM
UHCTM
UltraFET
STAR*POWER is used under license
VCXTM
PDF 
ZIP