2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDH45N50F Rev. A
F
DH45
N
50F 5
00V N-Chann
el MOSFE
T
, FRFE
T
January 2006
UniFET
TM
FDH45N50
F
500V N-Channel MOSFET, FRFET
Features
45A, 500V, R
DS(on)
= 0.12
@V
GS
= 10 V
Low gate charge ( typical 105 nC)
Low C
rss
( typical 62 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild's proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
G
S
D
TO-247
FDH Series
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FDH45N50F
Unit
V
DSS
Drain-Source Voltage
500
V
I
D
Drain Current
- Continuous (T
C
= 25
C)
- Continuous (T
C
= 100
C)
45
28.4
A
A
I
DM
Drain Current
- Pulsed
(Note 1)
180
A
V
GSS
Gate-Source voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
1868
mJ
I
AR
Avalanche Current
(Note 1)
45
A
E
AR
Repetitive Avalanche Energy
(Note 1)
62.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
C)
- Derate above 25
C
625
5
W
W/
C
T
J,
T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds
300
C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
R
JC
Thermal Resistance, Junction-to-Case
--
0.2
C/W
R
CS
Thermal Resistance, Case-to-Sink
0.24
--
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
--
40
C/W
2
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FDH45N50F Rev. A
F
DH45
N
50F 5
00V N-Chann
el MOSFE
T
, FRFE
T
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDH45N50F
FDH45N50F
TO-247
-
-
30
Electrical Characteristics
T
C
= 25C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Typ.
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
A
500
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.5
--
V/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, T
C
= 125
C
--
--
--
--
25
250
A
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30V, V
DS
= 0V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30V, V
DS
= 0V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
3.0
--
5.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 22.5A
--
0.105
0.12
g
FS
Forward Transconductance
V
DS
= 40V, I
D
= 22.5A
(Note 4)
--
49.0
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
5100
6630
pF
C
oss
Output Capacitance
--
790
1030
pF
C
rss
Reverse Transfer Capacitance
--
62
--
pF
C
oss
Output Capacitance
V
DS
= 400V, V
GS
= 0V, f = 1.0MHz
--
161
--
pF
C
oss
eff.
Effective Output Capacitance
V
DS
= 0V to 400V, V
GS
= 0V
--
342
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 250V, I
D
= 48A
R
G
= 25
(Note 4, 5)
--
140
290
ns
t
r
Turn-On Rise Time
--
500
1010
ns
t
d(off)
Turn-Off Delay Time
--
215
440
ns
t
f
Turn-Off Fall Time
--
245
500
ns
Q
g
Total Gate Charge
V
DS
= 400V, I
D
= 48A
V
GS
= 10V
(Note 4, 5)
--
105
137
nC
Q
gs
Gate-Source Charge
--
33
--
nC
Q
gd
Gate-Drain Charge
--
45
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
45
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
180
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 45A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0V, I
S
= 45A
dI
F
/dt =100A/
s
(Note 4)
--
188
--
ns
Q
rr
Reverse Recovery Charge
--
0.64
--
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.46mH, I
AS
= 48A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
C
3. I
SD
45A, di/dt 200A/s, V
DD
BV
DSS
, Starting T
J
= 25
C
4. Pulse Test: Pulse width
300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
3
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FDH45N50F Rev. A
F
DH45
N
50F 5
00V N-Chann
el MOSFE
T
, FRFE
T
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250 s Pulse Test
2. T
C
= 25
I
D
,
Dr
ai
n Curr
en
t
[
A]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
12
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250 s Pulse Test
I
D
,
Dr
ai
n Cu
r
r
e
n
t
[
A
]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
0
20
40
60
80
100
120
140
160
0.00
0.05
0.10
0.15
0.20
0.25
0.30
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS(O
N)
[
],
D
r
ai
n-So
urce On-Re
s
is
t
a
nce
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
1
10
2
150
Notes :
1. V
GS
= 0V
2. 250 s Pulse Test
25
I
DR
,
Rev
er
s
e Dr
ain Cur
r
ent
[
A
]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
0
20
40
60
80
100
120
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
Note : I
D
= 48A
V
GS
, Gat
e
-
So
u
rce Vo
l
t
ag
e [V
]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
2000
4000
6000
8000
10000
12000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Note :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
a
pa
ci
tan
c
es
[pF
]
V
DS
, Drain-Source Voltage [V]
4
www.fairchildsemi.com
FDH45N50F Rev. A
F
DH45
N
50F 5
00V N-Chann
el MOSFE
T
, FRFE
T
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DSS
,
(
N
or
mali
z
ed)
Dr
ain-
Sou
r
ce Br
eak
dow
n
Volt
a
g
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
Notes :
1. V
GS
= 10 V
2. I
D
= 22.5 A
R
DS
(O
N
)
, (
N
ormal
i
z
ed
)
D
r
ai
n-
Sou
r
ce
O
n
-
R
es
ist
a
nce
T
J
, Junction Temperature [
o
C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
25
50
75
100
125
150
0
10
20
30
40
50
I
D
,
D
r
ai
n C
ur
rent
[
A
]
T
C
, Case Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
100 ms
1 ms
10
s
DC
10 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drain Cur
r
ent
[A]
V
DS
, Drain-Source Voltage [V]
Figure 11. Typical Drain Current Slope
Figure 12. Typical Drain-Source Voltage
vs. Gate Resistance
Slope vs. Gate Resistance
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
40
45
Notes :
1. V
DS
= 400 V
2. V
GS
= 12 V
3. I
D
= 25A
4. T
J
= 125
o
C
dv/dt(off)
dv/dt(on)
d
v
/d
t [V
/n
S
]
R
G
, Gate resistance [
]
0
5
10
15
20
25
30
35
40
45
50
0
500
1,000
1,500
2,000
2,500
3,000
3,500
4,000
Notes :
1. V
DS
= 400 V
2. V
GS
= 12 V
3. I
D
= 25A
4. T
J
= 125
o
C
di/dt(off)
di/dt(on)
di
/dt [A
/
S]
R
G
, Gate resistance [
]
5
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FDH45N50F Rev. A
F
DH45
N
50F 5
00V N-Chann
el MOSFE
T
, FRFE
T
Typical Performance Characteristics
(Continued)
Figure 13. Typical Switching Losses vs.
Figure 14. Unclamped Inductive Switching
Gate Resistance
Capability
0
5
10
15
20
25
30
35
40
45
50
0
200
400
600
800
1,000
Notes :
1. V
DS
= 400 V
2. V
GS
= 12 V
3. I
D
= 25A
4. T
J
= 125
o
C
Eoff
Eon
Ener
g
y
[
J]
R
G
, Gate resistance [
]
0.01
0.1
1
10
100
1
10
100
Starting T
J
= 150
o
C
Notes :
1. If R = 0
t
AV
= (L)(I
AS
)/(1.3 Rated BV
DSS
- V
DD
)
2. If R
0
t
AV
= (L/R)In[(I
AS
x R)/(1.3 Rated BV
DSS
- V
DD
)+1]
Starting T
J
= 25
o
C
I
AS
, A
v
a
l
anc
h
e
C
u
r
r
ent [A]
t
AV
, Time In Avalanche [ms]
Figure 15. Transient Thermal Resistance Curve
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-3
10
-2
10
-1
Notes :
1. Z
JC
(t) = 0.2
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
JC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
JC
(
t
)
,
T
her
m
al
Response
t
1
, Square W ave Pulse Duration [sec]
t
1
P
DM
t
2
6
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FDH45N50F Rev. A
F
DH45
N
50F 5
00V N-Chann
el MOSFE
T
, FRFE
T
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
7
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FDH45N50F Rev. A
F
DH45
N
50F 5
0
0V N-Chann
e
l MOSFE
T
, FRFE
T
TRADEMARKS
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intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACExTM
ActiveArrayTM
BottomlessTM
Build it NowTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
IntelliMAXTM
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerEdgeTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
ScalarPumpTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UltraFET
UniFETTM
VCXTM
WireTM
Across the board. Around the world.TM
The Power Franchise
Programmable Active DroopTM
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17
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