1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
2002 Fairchild Semiconductor Corporation
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage
100
V
I
F(AV)
Average Rectified Forward Current
200
mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
A
T
stg
Storage Temperature Range
-65 to +200
C
T
J
Operating Junction Temperature
175
C
Symbol
Characteristic
Max
Units
1N/FDLL 914/A/B / 4148 / 4448
P
D
Power
Dissipation
500
mW
R
JA
Thermal Resistance, Junction to Ambient
300
C/W
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Typical Characteristics
Small Signal Diode
(continued)
Symbol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown Voltage
I
R
= 100
A
I
R
= 5.0
A
100
75
V
V
V
F
Forward
Voltage 1N914B/4448
1N916B
1N914/916/4148
1N914A/916A
1N916B
1N914B/4448
I
F
= 5.0 mA
I
F
= 5.0 mA
I
F
= 10 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 100 mA
620
630
720
730
1.0
1.0
1.0
1.0
mV
mV
V
V
V
V
I
R
Reverse
Current
V
R
= 20 V
V
R
= 20 V, T
A
= 150
C
V
R
= 75 V
25
50
5.0
nA
A
A
C
T
Total
Capacitance
1N916A/B/4448
1N914A/B/4148
V
R
= 0, f
= 1.0 MHz
V
R
= 0, f
= 1.0 MHz
2.0
4.0
pF
pF
t
rr
Reverse Recovery Time
I
F
= 10 mA, V
R
= 6.0 V (60mA),
I
rr
= 1.0 mA, R
L
= 100
4.0 ns
Electrical Characteristics
T
A
= 25C unless otherwise noted
110
120
130
140
150
160
Ta=25
o
C
1 2 3 5 10 20 30 50 100
R
e
vers
e
Vo
l
t
a
g
e, V
R
[V]
Reverse Current, I
R
[uA]
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
0
20
40
60
80
100
120
10 20 30 50 70 100
Ta= 25
o
C
R
e
v
e
rs
e
C
u
rre
n
t
,
I
R
[n
A
]
R everse Voltage, V
R
[V]
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
250
300
350
400
450
500
550
1 2 3 5 10 20 30 50 100
Ta= 25
o
C
For
w
a
r
d
Vol
t
age,
V
R
[mV]
Forward Current, I
F
[uA]
Figure 3. Forward Voltage vs Forward Current
VF - 1 to 100 uA
450
500
550
600
650
700
750
0.1 0.2 0.3 0.5 1 2 3 5 10
Ta= 25
o
C
F
o
r
w
a
rd
V
o
lta
g
e, V
F
[m
V
]
Forward Current, I
F
[mA]
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Typical Characteristics
(continued)
Small Signal Diode
(continued)
0
50
100
150
0
100
200
300
400
500
I
F(AV)
- AVERA
GE RECT
IFIED CU
RRENT -
mA
Cur
r
e
nt
(
m
A)
Ambient Temperature (
o
C)
0
2
4
6
8
10
12
14
0.75
0.80
0.85
0.90
T
A
= 25
o
C
T
o
t
a
l
C
a
pac
i
t
an
ce
(
p
F
)
REVERSE VOLTAGE (V)
0.6
0.8
1.0
1.2
1.4
1.6
10 20 30 50 100 200 300 500 800
Ta= 25
o
C
F
o
r
w
a
r
d
V
o
lt
a
g
e,
V
F
[m
V]
Forward Current, I
F
[mA]
Figure 5. Forward Voltage vs Forward Current
VF - 10 to 800 mA
0.01
0.1
1
10
300
400
500
600
700
800
900
3
0.3
0.03
Typical
Ta= -40
o
C
Ta= 25
o
C
Ta= +65
o
C
For
w
a
r
d
V
o
ltage,
V
F
[m
V]
Forward Current, I
F
[mA]
Figure 6. Forward Voltage
vs Ambient Temperature
VF - 0.01 - 20 mA (-40 to +65 Deg C)
10
20
30
40
50
60
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ta = 25
o
C
R
ever
se R
ecove
r
y
Ti
m
e
,
t
r
r
[n
s
]
Reverse Recovery Current, I
rr
[mA]
Figure 8. Reverse Recovery Time vs
Reverse Recovery Current
0
50
100
150
200
0
100
200
300
400
500
DO-35
SOT-23
P
o
w
e
r
D
i
ss
ip
a
t
i
o
n
,
P
D
[m
W
]
Temperature [
o
C]
Figure 10. Power Derating Curve
Figure 7. Total Capacitance
IF = 10mA - IRR = 1.0 mA - Rloop = 100 Ohms
Figure 9. Average Rectified Current (I
F(AV)
)
versus Ambient Temperature (T
A
)
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
I
2
C
ISOPLANAR
LittleFET
MicroFET
MicroPak
Rev. H5
ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E
2
CMOS
TM
EnSigna
TM
FACT
FACT Quiet Series
SILENT SWITCHER
SMART START
SPM
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
STAR*POWER is used under license
UHC
UltraFET
VCX
PDF 
ZIP