February
2006
2006 Fairchild Semiconductor Corporation
FDM2509NZ Rev C2
FDM2509NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This dual N-Channel MOSFET has been designed
using Fairchild Semiconductor's advanced Power
Trench process to optimize the R
DS(ON)
@ V
GS
= 2.5v on
special MicroFET lead frame with all the drains on one
side of the package.
Applications
Li-Ion Battery Pack
Features
8.7 A, 20 V
R
DS(ON)
= 18 m
@ V
GS
= 4.5 V
R
DS(ON)
= 24 m
@ V
GS
= 2.5 V
ESD protection diode (note 3)
Low Profile 0.8mm maximum in the new package
MicroFET 2x5 mm
3
2
1
4
5
6
Bottom Drain Contact
Bottom Drain Contact
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
20
V
V
GSS
Gate-Source
Voltage
12
V
I
D
Drain Current Continuous
(Note 1a)
8.7 A
Pulsed
30
P
D
Power Dissipation (Steady State)
(Note 1a)
2.2 W
(Note 1b)
0.8
T
J
, T
STG
Operating and Storage Junction Temperature
Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
55
C/W
R
JC
Thermal Resistance, Junction-to-Case (Drain)
2
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2509Z
FDM2509NZ
7''
12mm
3000 units
FDM2509NZ
PIN 1
G2
S2
S2
G1
S1
S1
S1 S1 G1
S2 S2 G2
MLP 2x5
FDM2509NZ Rev C2
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown
Voltage
V
GS
= 0 V,
I
D
= 250
A
20 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
12 mV/
C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 16 V,
V
GS
= 0 V
1
A
I
GSS
GateBody
Leakage,
V
GS
=
12 V, V
DS
= 0 V
10
A
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
0.6 0.9 1.5 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25 C
3 mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 4.5 V,
I
D
= 8.7 A
V
GS
= 4.0 V,
I
D
= 8.5 A
V
GS
= 3.1 V,
I
D
= 8.1 A
V
GS
= 2.5 V,
I
D
= 7.6 A
V
GS
= 4.5 V, I
D
= 8.7 A, T
J
= 125
C
13
13.5
15.5
18
18.4
18
19
21
24
25
m
g
FS
Forward
Transconductance
V
DS
= 5 V,
I
D
= 8.7 A
36
S
Dynamic Characteristics
C
iss
Input
Capacitance
1200
pF
C
oss
Output
Capacitance
320
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V,
V
GS
= 0 V,
f = 1.0 MHz
185 pF
R
G
Gate
Resistance
V
GS
= 50mV, f = 1.0 MHz
2
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
11
20
ns
t
r
TurnOn Rise Time
15
27
ns
t
d(off)
TurnOff Delay Time
27
43
ns
t
f
TurnOff
Fall
Time
V
DD
= 10 V,
I
D
= 1 A,
V
GS
= 4.5 V,
R
GEN
= 6
12
22 ns
Q
g
Total Gate Charge
12
17
nC
Q
gs
GateSource
Charge
2
nC
Q
gd
GateDrain
Charge
V
DS
= 10 V,
I
D
= 8.7 A,
V
GS
= 4.5 V
4 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
1.8
A
V
SD
DrainSource
Diode
Forward
Voltage
V
GS
= 0 V, I
S
= 1.8 A
(Note 2)
0.7
1.2 V
t
rr
Diode Reverse Recovery Time
20
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 8.7 A,
dI
F
/dt = 100 A/s
6.4 nC
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 55C/W
when
mounted on a 1in
2
pad
of 2 oz copper
Scale 1 : 1 on letter size
paper
b)
145C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300
s,
Duty Cycle < 2.0%
3. The diode connected between the
gate and the source serves only
as protection against ESD. No
gate overvoltage rating is
implied.
FDM2509NZ
FDM2509NZ Rev C2
Typical Characteristics
0
5
10
15
20
25
30
0
0.25
0.5
0.75
1
1.25
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRA
IN C
URR
EN
T
(A
)
2.5V
2.0V
V
GS
= 4.5V
3.0V
3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
R
DS
(O
N
)
,
NORM
AL
I
Z
ED
DRA
I
N
-
S
O
URCE ON-
R
ES
I
S
T
ANCE
V
GS
= 2.0V
2.5V
3.5V
4.5V
3.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
,
NO
R
M
AL
I
Z
E
D
DR
AIN
-
SOU
R
C
E
ON-R
ES
IST
A
N
C
E
I
D
= 8.7A
V
GS
= 4.5V
0.012
0.017
0.022
0.027
0.032
0.037
0.042
0.047
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(O
N)
, O
N
-R
ESIST
AN
C
E
(O
HM
)
I
D
= 4.4A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
DRA
I
N C
U
RR
EN
T (
A
)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REV
E
RS
E DR
AIN CU
RRE
NT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDM2509NZ
FDM2509NZ Rev C2
Typical Characteristics
0
1
2
3
4
5
0
3
6
9
12
15
Q
g
, GATE CHARGE (nC)
V
GS
,
GAT
E
-S
OUR
C
E
V
O
LTA
GE (
V
)
I
D
= 8.7A
V
DS
= 5V
15V
10V
0
200
400
600
800
1000
1200
1400
1600
1800
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACI
T
ANCE (
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DR
AI
N C
U
R
R
E
N
T
(A
)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
JA
= 145
o
C/W
T
A
= 25
o
C
10ms
1ms
100us
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
(
pk
),
PE
AK
TR
AN
SI
EN
T P
O
WE
R (
W
)
SINGLE PULSE
R
JA
= 145C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(
t
)
,
NORM
ALI
Z
E
D
E
F
F
E
C
T
I
V
E
T
RAN
S
I
E
N
T
TH
ER
M
A
L R
E
SI
ST
A
N
C
E
R
JA
(t) = r(t) * R
JA
R
JA
=145 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDM2509NZ
FDM2509NZ Rev C2
Dimensional Outline and Pad
Layout
FDM2509NZ
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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