December 2005
FDMC3300NZA Monolithic Common Drain N-
Chan
nel 2.5V Specified
Po
werTrench
MO
SFE
T
2005 Fairchild Semiconductor Corporation
FDMC3300NZA Rev B
www.fairchildsemi.com
1
FDMC3300NZA
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
MOSFET
8A,20V,26m
General Description
This Dual N-Channel MOSFET has been designed using
Fairchild Semiconductor's advanced Power Trench process
to optimize the R
DS
(on)@V
GS
=2.5v on special MicroFET
leadframe with all the drains on one side of the package.
Applications
Li-lon Battery Pack
Features
R
DS(ON)
= 26m
@ V
GS
= 4.5 V, I
D
= 8A
R
DS(ON)
= 34m
@ V
GS
= 2.5 V, I
D
= 7A
>2000V ESD protection
Low Profile-1mm maxium-in the new package MicroFET
3.3x3.3 mm
Pb-free and RoHS Compliant
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
20
V
V
GSS
Gate-Source Voltage
12
V
I
D
Drain Current -Continuous (Note 1a)
-Pulsed
8
A
40
P
D
Power dissipation (Steady State) (Note 1a)
2.4
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
o
C
R
JA
Thermal Resistance, Junction-to-Ambient (Note 1a)
52
o
C/W
R
JA
Thermal Resistance, Junction-to-Ambient (Note 1b)
108
R
JC
Thermal Resistance, Junction-to-Case (Note 1)
5
Device Marking
Device
Reel Size
Tape Width
Quantity
3300A
FDMC3300NZA
7"
12mm
3000 units
D 1
D 2
D 2
D 1
D 1
D 2
D 2
D 1
S 1
G 1
S 2
G 2
D 1
D 2
D 2
D 1
D 1
D 2
D 2
D 1
S 1
G 1
S 2
G 2
5
4
6
3
7
2
8
1
L
E
A D
F R E E
M
T
A
E
L
N
TI
O
MP
E
N
I
FDMC3300NZA Monolithic Common Drain N-
Chan
nel 2.5V specified PowerTrench
MO
SFE
T
FDMC3300NZA RevB
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain-Source Breakdown Voltage
V
GS
= 0V , I
D
= 250
A
20
-
-
V
B
VDSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A,
Referenced to 25C
-
12.0
-
mV/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16V, V
GS
= 0V,
-
-
1
A
I
GSS
Gate-Body Leakage,
V
GS
=
12V, V
DS
= 0V
-
-
10
A
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
0.6
-
1.5
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A,
Referenced to 25C
-
-3.1
-
mV/C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 4.5V, I
D
= 8A
-
20
26
m
V
GS
= 2.5V, I
D
= 7A
25
34
V
GS
= 4.5V, I
D
= 8A,
T
J
=150C
-
29
38
g
FS
Forward Transconductance
V
DS
= 5V, I
D
=8 A
-
29
-
S
(Note 2)
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 10V, V
GS
=0V,
f = 1.0MHz
-
610
-
pF
C
oss
Output Capacitance
-
165
-
pF
C
rss
Reverse Transfer Capacitance
-
115
-
pF
R
G
Gate Resistance
f = 1.0MHz
-
1.7
-
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
V
DD
= 10V, I
D
= 1A
V
GS
= 4.5V, R
GEN
= 6
-
8
16
ns
t
r
Turn-On Rise Time
-
8
16
ns
t
d(off)
Turn-Off Delay Time
-
19
34
ns
t
f
Turn-Off Fall Time
-
9
18
ns
Q
g
Total Gate Charge
V
DS
= 10V, I
D
= 8A,
V
GS
= 4.5V
-
8
-
nC
Q
gs
Gate-Source Charge
-
1
-
nC
Q
gd
Gate-Drain Charge
-
2
-
nC
Drain-Source Diode Characteristics and Maximum Ratings
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 2A (Note 2)
-
0.7
1.2
V
t
rr
Diode Reverse Recovery Time
I
F
= 8A,
dI
F
/dt=100A/
s
-
-
21
ns
Q
rr
Diode Reverse Recovery Charge
-
-
6
nC
Notes:
1. R
JA
is determined with the device mounted on a 1in
2
oz.copper pad on a 1.5x1.5 in board of FR-4 material .R
JC
are guaranteed by design
while R
JA
is determined by the user's board design.
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
b. 108C/W when mounted on
a minimum pad of 2 oz copper
a. 52C/W when mounted on
a 1 in
2
pad of 2 oz
FDMC3300NZA Monolithic Common Drain N-
Chan
nel 2.5V specified PowerTrench
MO
SFE
T
FDMC3300NZA RevB
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25C unless otherwise noted
Figure 1.
0
1
2
3
4
5
0
10
20
30
40
I
D
,
DR
AI
N
CU
RRE
NT
(A)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
PULSE DURATION =300
S
DUTY CYCLE =2.0% MAX
V
GS
= 4.5V
3.5V
3.0V
2.5V
2.0V
Waveforms in
Descending order:
On Region Characteristics
Figure 2.
4
8
12
16
20
24
28
32
36
40
0.8
1.0
1.2
1.4
1.6
1.8
2.0
NO
RM
AL
I
Z
ED DRAI
N
to
SO
URCE
ON
-RESI
ST
ANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
On-Resistance Variation with Drain
Current and Gate Voltage
Figure 3.
-80
-40
0
40
80
120
160
0.6
0.8
1.0
1.2
1.4
1.6
PULSE DURATION =300
S
DUTY CYCLE =2.0% MAX
I
D
= 8A
V
GS
= 4.5V
N
O
RMA
LI
Z
ED
DR
AI
N t
o
S
O
UR
CE
ON-R
ESISTAN
C
E
T
J
, JUNCTION TEMPERATURE (
C)
On Resistance Variation with
Temperature
Figure 4.
0
2
4
6
8
10
0.01
0.02
0.03
0.04
0.05
0.06
I
D
=4A
PULSE DURATION=300
s
DUTY CYCLE=2.0% MAX
T
J
= 25C
T
J
= 125C
R
DS(
O
N)
,
ON-
R
E
S
IS
TANCE
(
O
HM
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance Variation with
Gate-to-Source Votlage
Figure 5.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
10
20
30
40
PULSE DURATION=300s
DUTY CYCLE=2.0% MAX
T
J
= - 55C
T
J
= 25
C
T
J
= 125C
V
DS
= 5V
I
D
,
DR
AIN CU
RR
ENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics
Figure 6.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1E-4
1E-3
0.01
0.1
1
10
100
T
J
=-55
C
T
J
=25
C
I
S
,
REV
E
R
S
E
CU
RRE
NT
(A)
V
SD
, BODY DIODE FORWARD VOLTAGE(V)
T
J
=125
C
V
GS
=0V
Body Diode Forward Voltage Variation
With Source Current and Temperature
FDMC3300NZA Monolithic Common Drain N-
Chan
nel 2.5V specified PowerTrench
MO
SFE
T
FDMC3300NZA RevB
www.fairchildsemi.com
4
Figure 7. Gate Charge Characteri
0
2
4
6
8
10
12
14
16
0
2
4
6
8
V
DD
=15V
V
DD
=10V
V
DD
=5V
I
D
=8A
V
GS
, GAT
E
t
o
S
O
URCE
V
O
LT
AGE(
V)
Q
g
, GATE CHARGE (nC)
stics
Figure 8. Capacitance Characteristics
0.1
1
10
100
1000
C
RSS
C
OSS
C
ISS
f = 1MHz
V
GS
= 0V
CAP
ACIT
ANC
E (
p
F
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
50
Figure 9.
0.1
1
10
100
0.01
0.1
1
10
100
DC
1S
10S
100mS
10mS
1mS
RDSON LIMITED
I
D
,
DR
AIN CURR
ENT(
A
)
V
DS
, DRAIN-SOURCE VOLTAGE(V)
V
GS
=4.5V
SINGLE PULSE
R
JA
=108
C/W
T
A
=25
C
100S
Safe Operating Area
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
25
50
75
100
125
150
0
2
4
6
8
10
R
JA
=108C/W
V
GS
=4.5V
I
D
,
D
RAI
N C
URR
EN
T
(
A
)
T
A
, AMBIENT TEMPERATURE
(
C
)
V
GS
=2.5V
Figure 11.
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
1000
P
(PK
)
, PEAK
TR
A
NSI
ENT POWER
(
W)
t, Rectangular Pulse Duration(S)
SINGLE PULSE
R
JA
=108
C/W
T
A
=25
C
Single Maximum Power Dissipation
Typical Characteristics
T
J
= 25C unless otherwise noted
FDMC3300NZA Monolithic Common Drain N-
Chan
nel 2.5V specified PowerTrench
MO
SFE
T
FDMC3300NZA RevB
www.fairchildsemi.com
5
Figure 12.
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1E-3
0.01
0.1
1
SINGLE PULSE
D = 0.5
0.2
0.1
0.05
0.02
0.01
Nor
m
alized Ther
ma
l
Im
pe
da
n
c
e
Z
JA
t, Rectangular Pulse Duration(S)
DUTY CYCLE - DESCENDING ORDER
Transient Thermal Response Curve
Typical Characteristics
T
J
= 25C unless otherwise noted
FDMC3300NZA Monolithic Common Drain N-
Chan
nel 2.5V specified PowerTrench
MO
SFE
T
FDMC3300NZA RevB
www.fairchildsemi.com
6
FDMC3300NZA Rev B
www.fairchildsemi.com
7
FDMC3300NZA Monolithic Common Drain N-
Channel 2.5V specified PowerTrench
MOSF
ET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACExTM
ActiveArrayTM
BottomlessTM
Build it NowTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
IntelliMAXTM
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerEdgeTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
ScalarPumpTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UltraFET
UniFETTM
VCXTM
WireTM
Across the board. Around the world.TM
The Power Franchise
Programmable Active DroopTM
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17
PDF 
ZIP