March 1998
FDP4030L / FDB4030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
_______________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol
Parameter
FDP4030L
FDB4030L
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current
- Continuous
(Note 1)
20
A
- Pulsed
(Note 1)
60
P
D
Total Power Dissipation @ T
C
= 25
C
37.5
W
Derate above 25
C
0.25
W/
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
C
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
4
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
FDP4030L Rev.B1
20 A, 30 V. R
DS(ON)
= 0.035
@ V
GS
=10 V
R
DS(ON)
= 0.055
@ V
GS
=4.5V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175C maximum junction temperature rating.
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process has been especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as DC/DC converters and
other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are
needed.
S
D
G
1998 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
OFF CHARACTERISTICS
W
DSS
Single Pulse Drain-Source Avalanche Energy
V
DD
= 15 V, I
D
= 7 A
50
mJ
I
AR
Maximum Drain-Source Avalanche Current
7
A
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
30
V
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
I
D
= 250 A, Referenced to 25
o
C
33
mV/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
10
A
T
J
= 125C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.6
2
V
V
GS(th)
/
T
J
Gate Threshold Voltage Temp. Coefficient
I
D
= 250 A, Referenced to 25
o
C
-4.1
mV/
o
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 10 A
0.025
0.035
T
J
= 125C
0.048
0.06
V
GS
= 10 V, I
D
= 4.5 A
0.046
0.055
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
30
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 10 A
11
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
365
pF
C
oss
Output Capacitance
210
pF
C
rss
Reverse Transfer Capacitance
70
pF
SWITCHING CHARACTERISTICS
(Note 1)
t
D(on)
Turn - On Delay Time
V
DD
= 15 V, I
D
= 10 A,
V
GS
= 10 V, R
GEN
= 10
8
15
nS
t
r
Turn - On Rise Time
8
15
nS
t
D(off)
Turn - Off Delay Time
20
40
nS
t
f
Turn - Off Fall Time
10
20
nS
Q
g
Total Gate Charge
V
DS
= 24 V
I
D
= 10 A, V
GS
= 10 V
13
18
nC
Q
gs
Gate-Source Charge
2
nC
Q
gd
Gate-Drain Charge
4
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
20
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
60
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 10 A
(Note 1)
1.12
1.3
V
T
J
= 125C
1.08
1.2
Note:
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
FDP4030L Rev.B1
FDP4030L Rev.B1
Typical Electrical Characteristics
0
1
2
3
4
5
0
10
20
30
40
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
DS
D
4.5V
5.0V
6.0V
V = 10V
GS
4.0V
3.5V
-50
-25
0
25
50
75
100
125
150
175
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = 10V
GS
I = 10A
D
1
1.5
2
2.5
3
3.5
4
4.5
5
0
3
6
9
12
15
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25C
125C
V = 10V
DS
GS
D
T = -55C
J
Figure 5. Transfer Characteristics.
0
10
20
30
40
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(ON)
8.0V
10V
6.0V
7.0V
V =4.5V
GS
5.0V
5.5V
Figure 1. On-Region Characteristics.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
15
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125C
J
25C
-55C
V =0V
GS
SD
S
T = 25 C
A
GS
R , ON-RESISTANCE (OHM)
DS(ON)
I = 10A
D
T = 125 C
A
2
4
6
8
10
0
0.04
0.08
0.12
0.16
V , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDP4030L Rev.B1
Typical Electrical Characteristics
(continued)
0
4
8
12
16
20
0
3
6
9
12
15
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 10A
D
V = 6V
DS
12V
24V
0.1
0.3
1
4
10
30
40
100
200
400
1000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
f = 1 MHz
V = 0V
GS
C
oss
C
iss
C
rss
Figure 8. Capacitance Characteristics
.
Figure 7. Gate Charge Characteristics.
0.5
1
3
5
10
20
30
50
0.5
1
2
5
10
20
50
100
V , DRAIN-SOURCE VOLTAGE (V))
I , DRAIN CURRENT (A)
DS
D
100s
1ms
10ms
100ms
DC
R Limit
DS(ON)
V = 10V
SINGLE PULSE
R = 4 C/W
T = 25 C
GS
C
JC
o
10s
Figure 9. Maximum Safe Operating Area.
0.0001
0.001
0.01
0.1
1
10
0
200
400
600
800
1000
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R = 4C/W
T = 25C
JC
C
Figure 10. Single Pulse Maximum Power
Dissipation.
0.0001
0.001
0.01
0.1
1
10
0.05
0.1
0.2
0.5
1
t ,TIME (sec)
TRANSIENT THERMAL RESISTANCE
Single Pulse
D = 0.5
0.1
0.05
0.2
Duty Cycle, D = t /t
1
2
R (t) = r(t) * R
R = 4.0 C/W
JC
JC
JC
T - T = P * R (t)
JC
C
J
P(pk)
t
1
t
2
r(t), NORMALIZED EFFECTIVE
1
Figure 11. Transient Thermal Response Curve.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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