2005 Fairchild Semiconductor Corporation
1
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FDP52N20 Rev. A
FDP52N20 200V
N-Channel MOSFET
January 2006
UniFET
TM
FDP52N20
200V N-Channel MOSFET
Features
52A, 200V, R
DS(on)
= 0.049
@V
GS
= 10 V
Low gate charge ( typical 49 nC)
Low C
rss
( typical 66 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild's proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FDP Series
G
S
D
D
G
S
Symbol
Parameter
FDP52N20
Units
V
DSS
Drain-Source Voltage
200
V
I
D
Drain Current
- Continuous (T
C
= 25C)
52
A
- Continuous (T
C
= 100C)
33
A
I
DM
Drain Current
- Pulsed
(Note 1)
208
A
V
GSS
Gate-Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
2520
mJ
I
AR
Avalanche Current
(Note 1)
52
A
E
AR
Repetitive Avalanche Energy
(Note 1)
35.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25C)
357
W
- Derate above 25C
2.86
W/C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
C
Symbol
Parameter
FDP52N20
Units
R
JC
Thermal Resistance, Junction-to-Case
0.35
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C
/
W
2
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FDP52N20 Rev. A
FDP52N20 200V
N-Channel MOSFET
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25C unless otherwise noted
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.4mH, I
AS
= 52A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25C
3. I
SD
52A, di/dt
200A/
s, V
DD
BV
DSS,
Starting T
J
= 25C
4. Pulse Test : Pulse width
300
s, Duty cycle
2%
5. Essentially independent of operating temperature Typical Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP52N20
FDP52N20
TO-220
--
--
50
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
200
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature Coefficient
I
D
= 250
A, Referenced to 25C
--
0.2
--
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 200 V, V
GS
= 0 V
--
--
1
A
V
DS
= 160 V, T
C
= 150C
--
--
10
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
3.0
--
5.0
V
R
DS(on)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 26 A
--
0.041
0.049
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 26 A
(Note 4)
--
35
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
2230
2900
pF
C
oss
Output Capacitance
--
540
700
pF
C
rss
Reverse Transfer Capacitance
--
66
100
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 100 V, I
D
= 52A,
R
G
= 25
(Note 4, 5)
--
53
115
ns
t
r
Turn-On Rise Time
--
175
359
ns
t
d(off)
Turn-Off Delay Time
--
48
107
ns
t
f
Turn-Off Fall Time
--
29
68
ns
Q
g
Total Gate Charge
V
DS
= 160 V, I
D
= 52A,
V
GS
= 10 V
(Note 4, 5)
--
49
63
nC
Q
gs
Gate-Source Charge
--
19
--
nC
Q
gd
Gate-Drain Charge
--
24
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
52
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
204
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 52 A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 52 A,
dI
F
/ dt = 100 A/
s
(Note 4)
--
162
--
ns
Q
rr
Reverse Recovery Charge
--
1.3
--
C
3
www.fairchildsemi.com
FDP52N20 Rev. A
FDP52N20 200V
N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250
s Pulse Test
2. T
C
= 25
C
I
D
,
D
r
a
i
n C
u
rr
ent
[A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
12
10
0
10
1
10
2
150
C
25
C
-55
C
* Notes :
1. V
DS
= 40V
2. 250
s Pulse Test
I
D
,
Dr
ain
Cur
r
ent
[
A
]
V
GS
, Gate-Source Voltage [V]
0
25
50
75
100
125
150
0.00
0.02
0.04
0.06
0.08
0.10
0.12
V
GS
= 20V
V
GS
= 10V
* Note : T
J
= 25
C
R
DS
(ON
)
[
],
D
r
ai
n-S
o
u
r
ce On
-
R
esi
s
tan
c
e
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
1
10
2
150
* Notes :
1. V
GS
= 0V
2. 250
s Pulse Test
25
I
DR
,
Rev
e
r
s
e Dra
i
n Cur
r
e
n
t
[
A
]
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
apac
i
t
anc
es
[
p
F]
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
60
0
2
4
6
8
10
12
V
DS
= 100V
V
DS
= 40V
V
DS
= 160V
* Note : I
D
= 52A
V
GS
, G
a
te-Sou
r
c
e Vo
ltag
e
[V]
Q
G
, Total Gate Charge [nC]
4
www.fairchildsemi.com
FDP52N20 Rev. A
FDP52N20 200V
N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DSS
,
(
N
orm
a
l
i
z
ed)
Dr
ai
n-
S
ourc
e
B
r
ea
kdow
n V
o
l
t
age
T
J
, Junction Temperature [
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 26 A
R
DS(ON)
,
(
N
or
m
a
l
i
ze
d)
Dr
ain
-
Source
On-
R
esistan
c
e
T
J
, Junction Temperature [
C]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
10
3
100 ms
1 ms
10
s
DC
10 ms
100
s
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
C
2. T
J
= 150
C
3. Single Pulse
I
D
, Dr
ain
C
u
r
r
ent [A
]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
10
20
30
40
50
60
I
D
, D
r
ai
n C
u
rr
e
n
t
[A
]
T
C
, Case Temperature [
C]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
* N o te s :
1 . Z
J C
(t) = 0 .3 5
C /W M a x.
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
JM
- T
C
= P
D M
* Z
JC
(t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(t), The
r
mal R
e
s
p
o
n
s
e
t
1
, S q u a re W a ve P u ls e D u ra tio n [se c ]
t
1
P
DM
t
2
5
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FDP52N20 Rev. A
FDP52N20 200V
N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
www.fairchildsemi.com
FDP52N20 Rev. A
FDP52N20 200V
N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
www.fairchildsemi.com
FDP52N20 Rev. A
FDP52N20 200V
N-Channel MOSFET
Mechanical Dimensions
4.50
0.20
9.90
0.20
1.52
0.10
0.80
0.10
2.40
0.20
10.00
0.20
1.27
0.10
3.60
0.10
(8.70)
2.80
0.10
15.90
0.20
10.08
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
)
9.20
0.20
13.08
0.20
1.30
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
TO-220
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
8
www.fairchildsemi.com
FDP52N20 Rev. A
FDP52N20 200V
N-Channel MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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