April 1998
FDP6035L/FDB6035L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol
Parameter
FDP6035L
FDB6035L
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current - Continuous
58
A
- Pulsed
175
P
D
Maximum Power Dissipation @ T
C
= 25C
75
W
Derate above 25C
0.5
W/C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
C
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
2
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
FDP6035L Rev.B
58 A, 30 V. R
DS(ON)
= 0.011
@ V
GS
=10 V
R
DS(ON)
= 0.019
@ V
GS
=4.5 V
.
Low gate charge (typical 34 nC).
Low Crss (typical 175 pF).
Fast switching speed.
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as DC/DC converters and
high efficiency switching circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
S
D
G
1998 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
Single Pulse Drain-Source Avalanche Energy
V
DD
= 15 V, I
D
= 21 A
150
mJ
I
AR
Maximum Drain-Source Avalanche Current
21
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
30
V
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
I
D
= 250 A, Referenced to 25
o
C
37
mV/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
10
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note
1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.6
3
V
V
GS(th)
/
T
J
Gate Threshold Voltage Temp.Coefficient
I
D
= 250 A, Referenced to 25
o
C
-4
mV/
o
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 26 A
0.0095
0.011
T
J
=125 C
0.014
0.019
V
GS
= 4.5 V, I
D
= 21 A
0.015
0.019
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
60
A
I
D(on)
On-State Drain Current
V
GS
= 4.5 V, V
DS
= 10 V
15
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 26 A
37
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
1230
pF
C
oss
Output Capacitance
640
pF
C
rss
Reverse Transfer Capacitance
175
pF
SWITCHING CHARACTERISTICS
(Note 1)
t
D(on)
Turn - On Delay Time
V
DD
= 15 V, I
D
= 58 A
7.6
15
nS
t
r
Turn - On Rise Time
V
GS
= 10 V, R
GEN
= 24
150
210
nS
t
D(off)
Turn - Off Delay Time
29
46
nS
t
f
Turn - Off Fall Time
17
27
nS
Q
g
Total Gate Charge
V
DS
= 12 V
I
D
= 58 A, V
GS
= 10 V
34
46
nC
Q
gs
Gate-Source Charge
6
nC
Q
gd
Gate-Drain Charge
8
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuous Drain-Source Diode Forward Current
58
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 26 A
(Note 1)
0.91
1.3
V
T
J
= 125C
0.8
1.2
Note
:
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
FDP6035L Rev.B
FDP6035L Rev.B
Typical Electrical Characteristics
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
20
40
60
80
100
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
DS
D
7.0
4.0
4.5
5.0
3.5
6.0
V = 10V
GS
3.0
5.5
-50
-25
0
25
50
75
100
125
150
175
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
R ,NORMALIZED
DS(ON)
V = 10V
GS
I = 26A
D
1
2
3
4
5
0
10
20
30
40
50
60
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
-55C
T = 125C
A
25C
Figure 5. Transfer Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate
0
20
40
60
80
100
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(ON)
4.5
5.0
10
4.0
6.0
7.0
V =3.5V
GS
5.5
Figure 1. On-Region Characteristics.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
10
60
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125C
A
25C
-55C
V =0V
GS
SD
S
2
4
6
8
10
0
0.01
0.02
0.03
0.04
0.05
V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(ON)
25C
I = 26A
D
T = 125C
A
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDP6035L Rev.B
Typical Electrical Characteristics
(continued)
0
10
20
30
40
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 26A
D
V = 6.0V
DS
24V
12V
0.1
0.3
1
3
10
30
100
300
800
2000
4000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
f = 1 MHz
V = 0V
GS
C
oss
C iss
C
rss
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
0.5
1
3
5
10
20
30
50
0.5
1
2
5
10
20
50
100
200
300
V , DRAIN-SOURCE VOLTAGE (V))
I , DRAIN CURRENT (A)
DS
D
100s
1ms
10ms
100ms
DC
R Limit
DS(ON)
V = 10V
SINGLE PULSE
R = 2 C/W
T = 25 C
GS
C
JC
o
10s
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 11. Transient Thermal Response Curve.
0.01
0.05
0.1
0.5
1
5
10
50
100
500
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
TRANSIENT THERMAL RESISTANCE
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r(t), NORMALIZED EFFECTIVE
1
Duty Cycle, D = t /t
1
2
R (t) = r(t) * R
R = 2.0 C/W
JC
JC
JC
T - T = P * R (t)
JC
C
J
P(pk)
t
1
t
2
0.01
0.1
1
10
100
1,000
0
500
1000
1500
2000
2500
3000
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R = 2 C/W
T = 25C
JC
C
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