May 2003
2003 Fairchild Semiconductor Corporation
FDP6670AL/FDB6670AL Rev D(W)
FDP6670AL/FDB6670AL
N-Channel Logic Level PowerTrench
MOSFET
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R
DS(ON)
and fast switching speed.
Features
80 A, 30 V
R
DS(ON)
= 6.5 m
@ V
GS
= 10 V
R
DS(ON)
= 8.5 m
@ V
GS
= 4.5 V
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low R
DS(ON)
175
C maximum junction temperature rating
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current Continuous
(Note 1)
80
A
Pulsed
(Note 1)
240
P
D
Total Power Dissipation @ T
C
= 25
C
68
W
Derate above 25
C
0.45
W/
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
65 to +175
C
Thermal Characteristics
R
JC
Thermal Resistance, Junction-to-Case
2.2
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDB6670AL
FDB6670AL
13''
24mm
800 units
FDP6670AL
FDP6670AL
Tube
n/a
45
FDP6670AL/FDB6670AL
FDP6670AL/FDB6670AL Rev D(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
V
DD
= 15 V,
I
D
= 80 A
114
mJ
I
AR
Maximum Drain-Source Avalanche
Current
80
A
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V,
I
D
= 250
A
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
24
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V,
V
GS
= 0 V
1
A
I
GSS
GateBody Leakage
V
GS
=
20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250
A
1
1.9
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
5
mV/
C
R
DS(on)
Static DrainSource On
Resistance
V
GS
= 10 V,
I
D
= 40 A
V
GS
= 4.5 V,
I
D
= 37 A
V
GS
= 10 V, I
D
= 40 A, T
J
=125
C
5.2
6.5
7.2
6.5
8.5
9.7
m
I
D(on)
OnState Drain Current
V
GS
= 10 V,
V
DS
= 10 V
80
A
g
FS
Forward Transconductance
V
DS
= 10V,
I
D
= 40 A
115
S
Dynamic Characteristics
C
iss
Input Capacitance
2440
pF
C
oss
Output Capacitance
580
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V,
V
GS
= 0 V,
f = 1.0 MHz
250
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.4
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
13
23
ns
t
r
TurnOn Rise Time
13
23
ns
t
d(off)
TurnOff Delay Time
42
68
ns
t
f
TurnOff Fall Time
V
DD
= 10V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
15
27
ns
Q
g
Total Gate Charge
24
33
nC
Q
gs
GateSource Charge
7
nC
Q
gd
GateDrain Charge
V
DS
= 15 V,
I
D
= 40 A,
V
GS
= 5 V
9
nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
80
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 40 A
(Note 1)
0.9
1.3
V
t
rr
Diode Reverse Recovery Time
34
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 40 A,
d
iF
/d
t
= 100 A/s
24
nC
Notes:
1. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDP6670AL/FDB6670AL
FDP6670AL/FDB6670AL Rev D(W)
Typical Characteristics
0
25
50
75
100
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
3.0V
V
GS
= 10V
4.5V
3.5V
6.0V
4.0V
0.8
1
1.2
1.4
1.6
1.8
0
20
40
60
80
100
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.5V
5.0V
6.0V
4.5V
4.0V
10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 80A
V
GS
=10V
0.005
0.009
0.013
0.017
0.021
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 40A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
20
40
60
80
100
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 10V
0.001
0.01
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6670AL/FDB6670AL
FDP6670AL/FDB6670AL Rev D(W)
Typical Characteristics
0
2
4
6
8
10
0
10
20
30
40
50
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 80A
V
DS
= 10V
20V
15V
0
1000
2000
3000
4000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
100s
100mS
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 2.2
o
C/W
T
A
= 25
o
C
10mS
10s
1mS
0
1000
2000
3000
4000
5000
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JC
= 2.2C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
JC
(t) = r(t) * R
JA
R
JA
= 2.2 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
FDP6670AL/FDB6670AL
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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