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Электронный компонент: FDP6670AS

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January 2005
2005 Fairchild Semiconductor Corporation
FDP6670AS/FDB6670AS Rev A(X)
FDP6670AS/FDB6670AS
30V N-Channel PowerTrench
SyncFET
TM
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDP6670AS
includes an integrated Schottky diode using Fairchild's
monolithic SyncFET technology. The performance of
the FDP6670AS/FDB6670AS as the low-side switch in
a synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
Features
31 A, 30 V.
R
DS(ON)
= 8.5 m
@ V
GS
= 10 V
R
DS(ON)
= 10.5 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (28nC typical)
High performance trench technology for extremely
low R
DS(ON)
and fast switching
High power and current handling capability
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source
Voltage
20
V
I
D
Drain Current Continuous
62
A
Pulsed
(Note 1)
150
P
D
Total Power Dissipation @ T
C
= 25
C
62.5
W
Derate above 25
C
0.5
W/
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
C
Thermal Characteristics
R
JC
Thermal Resistance, Junction-to-Case
2.1
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDB6670AS
FDB6670AS
13''
24mm
800 units
FDB6670AS FDB6670AS_NL
(Note 3)
13''
24mm
800 units
FDP6670AS FDP6670AS Tube
n/a
45
FDP6670AS FDP6670AS_NL
(Note 4)
Tube
n/a
45
FDP6670AS/FDB6670AS
FDP6670AS/FDB6670AS Rev A (X)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V,
I
D
= 1mA
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 26mA, Referenced to 25
C
30 mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
500
A
I
GSS
GateBody
Leakage
V
GS
=
20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 1mA
1
1.7
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 26mA, Referenced to 25
C
3.4
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V, I
D
= 31 A
V
GS
= 4.5 V, I
D
= 26.5 A
V
GS
=10 V, I
D
=31 A, T
J
=125
C
6.8
8.4
9
8.5
10.5
12.5
m
I
D(on)
OnState Drain Current
V
GS
= 10 V, V
DS
= 10 V
60
A
g
FS
Forward
Transconductance V
DS
= 10 V, I
D
= 31 A
84
S
Dynamic Characteristics
C
iss
Input
Capacitance
1570
pF
C
oss
Output
Capacitance
440
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
160 pF
R
G
Gate
Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.9
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
9
18
ns
t
r
TurnOn Rise Time
12
22
ns
t
d(off)
TurnOff Delay Time
27
43
ns
t
f
TurnOff
Fall
Time
V
DS
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
19 34 ns
t
d(on)
TurnOn
Delay
Time
16
29
ns
t
r
TurnOn Rise Time
16
29
ns
t
d(off)
TurnOff Delay Time
25
40
ns
t
f
TurnOff
Fall
Time
V
DS
= 15 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
13 23 ns
Q
g
Total Gate Charge, Vgs=10V
28
39
nC
Q
gs
GateSource Charge, Vgs=5V
15
21
nC
Q
gd
GateDrain
Charge
5
nC
Q
gd
GateDrain
Charge
V
DS
= 15 V, I
D
= 31 A,
5 nC
DrainSource Diode Characteristics
V
SD
DrainSource
Diode
Forward
Voltage
V
GS
= 0 V, I
S
= 3.5 A
(Note 1)
V
GS
= 0 V, I
S
= 7 A
(Note 1)
0.5
0.6
0.7
0.9
V
t
rr
Diode Reverse Recovery Time
20
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 3.5 A,
d
iF
/d
t
= 300 A/s
(Note
2)
14 nC
Notes:
1. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
2. See "SyncFET Schottky body diode characteristics" below.
3. FDB6670AS_NL is a lead free product. The FDB6670AS_NL marking will appear on the reel label.
4. FDP6670AS_NL is a lead free product. The FDP6670AS_NL marking will appear on the reel label.
FDP6670
A
S/FDB6670AS
FDP6670AS/FDB6670AS Rev A (X)
Typical Characteristics
0
30
60
90
120
150
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRA
I
N
CUR
RENT (
A
)
5.0V
V
GS
= 10V
4.5V
6.0V
4.0V
3.5V
3.0V
0.8
1
1.2
1.4
1.6
1.8
0
30
60
90
120
150
I
D
, DRAIN CURRENT (A)
R
DS
(O
N
)
,
NO
RM
AL
I
Z
E
D
D
R
A
I
N
-
S
O
UR
CE O
N
-R
ES
IS
TA
NCE
V
GS
= 3.5V
4.0V
6.0V
5.0V
10V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N
)
,
NO
RMA
L
I
Z
ED
DRA
IN
-
S
OUR
C
E ON
-R
ESI
ST
ANC
E
I
D
= 31A
V
GS
= 10V
0.002
0.007
0.012
0.017
0.022
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(O
N
)
,
O
N
-R
ES
IS
TA
NCE

(O
H
M
)
I
D
= 15.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
20
40
60
80
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
DR
AI
N C
URR
EN
T (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.01
0.1
1
10
0
0.1
0.2
0.3
0.4
0.5
0.6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
RE
VER
S
E
DRA
I
N
CUR
RE
NT

(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6670
A
S/FDB6670AS
FDP6670AS/FDB6670AS Rev A (X)
Typical Characteristics
(continued)
0
2
4
6
8
10
0
6
12
18
24
30
Q
g
, GATE CHARGE (nC)
V
GS
,
G
A
T
E
-S
O
URCE
VO
L
T
A
GE
(
V
)
I
D
= 31A
V
DS
= 10V
20V
15V
0
600
1200
1800
2400
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CA
PA
CI
TA
NC
E (
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN C
URRE
NT
(
A
)
DC
1s
100m
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JC
= 2.1
o
C/W
T
A
= 25
o
C
10ms
10s
100s
0
200
400
600
800
1000
0.1
1
10
100
1000
t
1
, TIME (sec)
P(
pk), PEA
K TR
A
N
SIEN
T POWER
(W)
SINGLE PULSE
R
JC
= 2.1C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t),
N
O
RM
A
L
I
Z
E
D
E
FFE
CT
I
V
E
TRANS
I
E
NT T
H
E
R
M
A
L
R
E
S
I
S
T
ANC
E
R
JC
(t) = r(t) * R
JC
R
JC
= 2.1 C/W
T
J
- Tc = P * R
JC
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDP6670
A
S/FDB6670AS
FDP6670AS/FDB6670AS Rev A (X)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild's SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6670AS.

















Figure 12. FDP6670AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6670A).



Figure 13. Non-SyncFET (FDP6670A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
I
DS
S
,

REVE
RSE
LE
AKAGE
C
U
RRENT
(A
)
T
A
= 100
o
C
T
A
= 25
o
C
T
A
= 125
o
C
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.












FDP6670
A
S/FDB6670AS
CURRENT: 0
.
8A/
d
i
v
TIME: 12.5ns/div
C
URRENT
:
0
.
8
A
/
d
i
v
TIME: 12.5ns/div
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
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