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Электронный компонент: FDP6670S

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September 2001
2001 Fairchild Semiconductor Corporation
FDP6670S/FDB6670S Rev E(W)
FDP6670S/FDB6670S
30V N-Channel PowerTrench
SyncFET
TM
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDP6670S includes
an integrated Schottky diode using Fairchild's
monolithic SyncFET technology. The performance of
the FDP6670S/FDB6670S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
Features
31 A, 30 V.
R
DS(ON)
= 8.5 m
@ V
GS
= 10 V
R
DS(ON)
= 12.5 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (23nC typical)
High performance trench technology for extremely
low R
DS(ON)
and fast switching
High power and current handling capability
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current Continuous
(Note 1)
62
A
Pulsed
(Note 1)
150
P
D
Total Power Dissipation @ T
C
= 25
C
62.5
W
Derate above 25
C
0.5
W/
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
C
Thermal Characteristics
R
JC
Thermal Resistance, Junction-to-Case
2.1
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDB6670S
FDB6670S
13''
24mm
800 units
FDP6670S
FDP6670S
Tube
n/a
45
FDP
6670S
/FDB
6670S
FDP6670S/FDB6670S Rev E (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
V
DD
= 25 V,
I
D
= 16.5 A
285
mJ
I
AR
Maximum Drain-Source Avalanche
Current
16.5
A
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V,
I
D
= 1mA
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 26mA, Referenced to 25
C
24
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
500
A
I
GSSF
GateBody Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
GateBody Leakage, Reverse
V
GS
= 20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 1mA
1
2.2
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 26mA, Referenced to 25
C
4.5
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V, I
D
= 31 A
V
GS
= 4.5 V, I
D
= 26.5 A
V
GS
=10 V, I
D
=31 A, T
J
=125
C
5
8
10
8.5
12.5
19
m
I
D(on)
OnState Drain Current
V
GS
= 10 V, V
DS
= 10 V
60
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 31 A
69
S
Dynamic Characteristics
C
iss
Input Capacitance
2639
pF
C
oss
Output Capacitance
737
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
222
pF
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
13
24
ns
t
r
TurnOn Rise Time
10
21
ns
t
d(off)
TurnOff Delay Time
39
62
ns
t
f
TurnOff Fall Time
V
DS
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
35
56
ns
Q
g
Total Gate Charge
23
32
nC
Q
gs
GateSource Charge
9
nC
Q
gd
GateDrain Charge
V
DS
= 15 V, I
D
= 31 A,
V
GS
= 5 V
8
nC
DrainSource Diode Characteristics
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 3.5 A
(Note 1)
V
GS
= 0 V, I
S
= 7 A
(Note 1)
0.39
0.48
0.7
0.9
V
t
rr
Diode Reverse Recovery Time
32
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 3.5 A,
d
iF
/d
t
= 300 A/s
(Note 2)
56
nC
Notes:
1. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
2. See "SyncFET Schottky body diode characteristics" below.
FDP
6670S
/FDB
6670S
FDP6670S/FDB6670S Rev E (W)
Typical Characteristics
0
30
60
90
120
150
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
5.0V
V
GS
= 10V
4.5V
6.0V
4.0V
3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
30
60
90
120
150
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 4.0V
8.0V
6.0V
5.0V
10V
7.0V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 31A
V
GS
= 10V
0.002
0.007
0.012
0.017
0.022
0.027
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 15.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
20
40
60
80
2
2.5
3
3.5
4
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.01
0.1
1
10
0
0.1
0.2
0.3
0.4
0.5
0.6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP
6670S
/FDB
6670S
FDP6670S/FDB6670S Rev E (W)
Typical Characteristics
(continued)
0
2
4
6
8
10
0
10
20
30
40
50
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 31A
V
DS
= 10V
20V
15V
0
600
1200
1800
2400
3000
3600
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JC
= 2.1
o
C/W
T
A
= 25
o
C
10ms
100s
1ms
10us
0
200
400
600
800
1000
0.0001
0.001
0.01
0.1
1
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JC
= 2.1C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
J C
(t) = r(t) * R
J C
R
J C
= 2.1 C/W
T
J
- Tc = P * R
J C
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
FDP
6670S
/FDB
6670S
FDP6670S/FDB6670S Rev E (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild's SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6670S.

















Figure 12. FDP6670S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6670A).



Figure 13. Non-SyncFET (FDP6670A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
0.00001
0.0001
0.001
0.01
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
I
DSS
, REVERSE LEAKAGE CURRENT (A)
T
A
= 100
o
C
T
A
= 25
o
C














FDP
6670S
/FDB
6670S
CURRENT: 0.8A/div
TIME
:
12.5ns/div
CURRENT: 0.8A/div
TIME: 12.5ns/div
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
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