April 2001
2000 Fairchild Semiconductor Corporation
FDP6676/FDB6676 Rev C(W)
FDP6676/FDB6676
30V N-Channel Logic Level PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
"low side" synchronous rectifier operation, providing an
extremely low R
DS(ON)
.
Applications
Synchronous rectifier
DC/DC converter
Features
42 A, 30 V.
R
DS(ON)
= 6.0 m
@ V
GS
= 10 V
R
DS(ON)
= 7.5 m
@ V
GS
= 4.5 V
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low R
DS(ON)
175
C maximum junction temperature rating
.
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source
Voltage
30
V
V
GSS
Gate-Source
Voltage
16
V
I
D
Drain Current Continuous
(Note 1)
84 A
Pulsed
(Note 1)
240
P
D
Total Power Dissipation @ T
C
= 25
C
93 W
Derate
above
25
C
0.48
W
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
-65 to +175
C
Thermal Characteristics
R
JC
Thermal Resistance, Junction-to-Case
1.6
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDP6676 FDP6676 Tube
n/a
45
FDB6676 FDB6676 13"
24mm 800
units
FDP6676/FDB6676
FDP6676/FDB6676 Rev. C(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
V
DD
= 15 V,
I
D
= 20 A
370
mJ
I
AR
Maximum Drain-Source Avalanche
Current
20 A
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
30 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
24 mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V,
V
GS
= 0 V
1
A
I
GSSF
GateBody
Leakage,
Forward V
GS
= 16 V,
V
DS
= 0 V
100
nA
I
GSSR
GateBody
Leakage,
Reverse V
GS
= 16 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
1 1.5 3 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
4.5 mV/
C
R
DS(on)
Static
DrainSource
OnResistance
V
GS
= 10 V,
I
D
= 42 A
V
GS
= 4.5 V,
I
D
= 39 A
V
GS
=10V, I
D
= 42 A, T
J
=125
C
4.3
4.9
7.0
6
7.5
11
m
I
D(on)
OnState Drain Current
V
GS
= 10 V,
V
DS
= 5 V
60
A
g
FS
Forward
Transconductance V
DS
= 5 V,
I
D
= 42 A
141
S
Dynamic Characteristics
C
iss
Input
Capacitance
5324 pF
C
oss
Output
Capacitance
841
pF
C
rss
Reverse
Transfer
Capacitance
V
DS
= 15 V,
V
GS
= 0 V,
f = 1.0 MHz
384 pF
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
15
27
ns
t
r
TurnOn Rise Time
10
20
ns
t
d(off)
TurnOff
Delay
Time
93
149
ns
t
f
TurnOff Fall Time
V
DD
= 15 V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
37 59 ns
Q
g
Total
Gate
Charge
43
60
nC
Q
gs
GateSource
Charge
13 nC
Q
gd
GateDrain
Charge
V
DS
= 15 V,
I
D
= 42 A,
V
GS
= 5 V
11 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
84
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 42 A
0.9
1.3
V
Notes:
1. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
2. TO-220 package is supplied in tube / rail @ 45 pieces per rail.
3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A
FDP6676/FDB6676
FDP6676/FDB6676 Rev. C(W)
Typical Characteristics
0
30
60
90
120
150
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT (
A
)
4.5V
3.0V
2.5V
V
GS
= 10V
3.5V
0.8
1
1.2
1.4
1.6
1.8
0
30
60
90
120
150
I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANC
E
V
GS
= 3.0V
4.0V
3.5V
4.5V
10V
6.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(O
N)
,
NO
RM
ALI
Z
E
D
DRAI
N-S
O
URCE
O
N
-RE
S
I
S
T
ANCE
I
D
=42 A
V
GS
= 10V
0.002
0.005
0.008
0.011
0.014
0.017
2
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(O
N)
, O
N
-
R
E
S
I
S
T
ANCE
(
O
HM)
I
D
= 21 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
15
30
45
60
75
90
1
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
R
EVER
SE
DRAIN CURRE
NT (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6676/FDB6676
FDP6676/FDB6676 Rev. C(W)
Typical Characteristics
0
2
4
6
8
10
0
10
20
30
40
50
60
70
80
90
Q
g
, GATE CHARGE (nC)
V
GS
, G
A
TE
-
S
O
URCE
V
O
LTAG
E
(
V
)
I
D
= 42 A
V
DS
= 5V
15V
10V
0
1000
2000
3000
4000
5000
6000
7000
0
6
12
18
24
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACITANCE
(
p
F
)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, D
R
A
IN
C
U
R
R
EN
T
(
A
)
DC
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JC
= 1.6
o
C/W
T
C
= 25
o
C
1s
10s
0
200
400
600
800
1000
1
10
100
1000
t
1
, TIME (sec)
P
(
pk
)
,
P
E
AK TRANS
IE
NT P
O
WE
R (
W
)
SINGLE PULSE
R
JC
= 1.6C/W
T
C
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(t),
NO
RMALI
Z
E
D
E
FFE
CTI
V
E
TRANS
I
E
NT THE
R
MAL RE
S
I
S
T
ANCE
R
JC
(t) = r(t) + R
JC
R
JC
= 1.6 C/W
T
J
- T
C
= P * R
JC
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDP6676/FDB6676
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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