October 2001
2001 Fairchild Semiconductor Corporation
FDP6676S/FDB6676S Rev. C (W)
FDP6676S / FDB6676S
30V N-Channel PowerTrench
SyncFET
TM
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDP/B6676S
includes an integrated Schottky diode using Fairchild's
monolithic SyncFET technology. The performance of
the FDP/B6676S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP/B6676 in parallel with a
Schottky diode.
Features
38 A, 30 V.
R
DS(ON)
= 6.5 m
@ V
GS
= 10 V
R
DS(ON)
= 8.0 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (40nC typical)
High performance trench technology for extremely
low R
DS(ON)
and fast switching
High power and current handling capability
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source
Voltage
16
V
I
D
Drain Current Continuous
(Note 1)
76
A
Pulsed
(Note 1)
150
P
D
Total Power Dissipation @ T
C
= 25
C
70
W
Derate above 25
C
0.56
W/
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
C
Thermal Characteristics
R
JC
Thermal Resistance, Junction-to-Case
1.8
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
55
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDB6676S FDB6676S 13''
24mm
800
FDP6676S FDP6676S Tube
n/a
45
FDP6676S
/
FDB6676S
FDP6676S/FDB6676S Rev C (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
Single Pulse, V
DD
= 25 V, I
D
=12A 310
mJ
I
AR
Drain-Source
Avalanche
Current
12
A
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V, I
D
= 1 mA
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 1 mA, Referenced to 25
C
25
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V,
V
GS
= 0 V
500
A
I
GSSF
GateBody
Leakage,
Forward V
GS
= 16 V,
V
DS
= 0 V
100
nA
I
GSSR
GateBody
Leakage,
Reverse V
GS
= 16 V
V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
1
1.3
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 1 mA, Referenced to 25
C
8.4 mV/
C
R
DS(on)
Static
DrainSource
OnResistance
V
GS
= 10 V,
I
D
= 38 A
V
GS
= 4.5 V,
I
D
= 35 A
V
GS
=10 V, I
D
=38A, T
J
=125
C
4.7
5.2
7.3
6.5
8.0
11
m
I
D(on)
OnState Drain Current
V
GS
= 10 V,
V
DS
= 10 V
60
A
g
FS
Forward
Transconductance V
DS
= 10 V,
I
D
= 38 A
145
S
Dynamic Characteristics
C
iss
Input
Capacitance
4853 pF
C
oss
Output
Capacitance
850
pF
C
rss
Reverse
Transfer
Capacitance
V
DS
= 15 V,
V
GS
= 0 V,
f = 1.0 MHz
316 pF
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
14
25
ns
t
r
TurnOn Rise Time
11
20
ns
t
d(off)
TurnOff
Delay
Time
89
142
ns
t
f
TurnOff Fall Time
V
DS
= 15 V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
31 50 ns
Q
g
Total
Gate
Charge
40
56
nC
Q
gs
GateSource
Charge
10 nC
Q
gd
GateDrain
Charge
V
DS
= 15 V,
I
D
= 38 A,
V
GS
= 5 V
11 nC
DrainSource Diode Characteristics and Maximum Ratings
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 3.5 A
(Note 1)
V
GS
= 0 V, I
S
= 7 A
(Note 1)
0.4
0.5
0.7 V
t
rr
Diode Reverse Recovery Time
28.5
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 3.5 A,
d
iF
/d
t
= 300 A/s
(Note
2)
57 nC
Notes:
1. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
2. See "SyncFET Schottky body diode characteristics" below.
FDP6676S
/
FDB6676S
FDP6676S/FDB6676S Rev C (W)
Typical Characteristics
0
25
50
75
100
125
150
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRAI
N CURRE
NT (A)
2.5V
3.5V
V
GS
= 10V
4.5V
3.0V
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANCE
V
GS
= 2.5V
4.5V
3.0V
3.5V
10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-55
-35
-15
5
25
45
65
85
105
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANC
E
I
D
= 38A
V
GS
=10V
120
0.004
0.006
0.008
0.01
0.012
0.014
0.016
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
,
O
N
-RE
S
I
S
T
ANCE
(O
HM)
I
D
= 19A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
15
30
45
60
75
90
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
DRAI
N CURRE
NT
(A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
REVERSE DRAI
N CURRENT
(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6676S
/
FDB6676S
FDP6676S/FDB6676S Rev C (W)
Typical Characteristics
(continued)
0
2
4
6
8
10
0
20
40
60
80
Q
g
, GATE CHARGE (nC)
V
GS
, G
A
TE
-
S
O
URCE
V
O
LTAG
E
(
V
)
I
D
= 38A
V
DS
= 10V
20V
15V
0
800
1600
2400
3200
4000
4800
5600
6400
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACITANCE
(
pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRAI
N CURRE
NT (A)
DC
1s
100m
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JC
= 1.8
o
C/W
T
A
= 25
o
C
10ms
10s
0
200
400
600
800
1000
1
10
100
1000
t
1
, TIME (sec)
P
(
p
k
)
,
P
E
AK T
RANS
I
E
NT
P
O
W
E
R (
W
)
SINGLE PULSE
R
JC
= 1.8C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
JC
(t) = r(t) * R
JC
R
JC
= 1.8 C/W
T
J
- T
C
= P * R
JC
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
t
1
t
2
SINGLE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
FDP6676S
/
FDB6676S
FDP6676S/FDB6676S Rev C (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild's SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6676S.
Figure 12. FDP6676S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6676).
C
u
r
r
ent
:
0.
8A
/
d
i
v
Time : 12.5ns/div
Figure 13. Non-SyncFET (FDP6676) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
I
DSS
,
REVERSE LEAKAG
E CURRENT (
A
)
T
A
= 100
o
C
T
A
= 25
o
C
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
FDP6676S
/
FDB6676S
Time : 12.5ns/div
C
u
rrent :0.8A/di
v
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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